JP7201005B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 137
- 239000000758 substrate Substances 0.000 claims description 53
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 22
- 230000015556 catabolic process Effects 0.000 description 17
- 230000005684 electric field Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本発明の第1の実施形態に係る半導体装置は、図1に示すように、素子領域110と素子領域110の周囲を囲む周辺領域120が上面に定義された半導体基体10を備える。半導体基体10は、第1導電型の第1半導体層11の上に第2導電型の第2半導体層12が積層された構成である。半導体基体10の上面には、保護膜30が形成されている。
図1に示した半導体装置では、トレンチ20の導電体膜22の延在部221が、トレンチ20の開口部から素子領域110に近い領域に向かって延在している。しかし、例えば、図6に示すように、トレンチ20の開口部から素子領域110に近い領域に向かって延在した部分とトレンチ20の開口部から半導体基体10の外縁に近い領域に向かって延在した部分に延在部221を配置してもよい。或いは、図7に示すように、トレンチ20の開口部から半導体基体10の外縁に近い領域に向かって延在した部分のみに延在部221を配置してもよい。
本発明の第2の実施形態に係る半導体装置は、図8に示すように、外側領域122よりも内側領域121において、トレンチ20の溝の深さが浅い。つまり、内側領域121と外側領域122とでトレンチ20の溝の深さが異なることが第1の実施形態と異なる点である。その他の構成については、図1に示す第1の実施形態と同様である。
11…第1半導体層
12…第2半導体層
20…トレンチ
21…絶縁膜
22…導電体膜
221…延在部
30…保護膜
110…素子領域
120…周辺領域
121…内側領域
122…外側領域
Claims (4)
- 素子領域と前記素子領域の周囲を囲む周辺領域が上面に定義された半導体基体を備え、
前記半導体基体の上面から膜厚方向に延伸する溝の内壁面に配置された絶縁膜、及び前記溝の内部で前記絶縁膜の上に配置された導電体膜をそれぞれ有する複数のトレンチが、前記素子領域の周囲を囲んで前記周辺領域に多重に配置され、
前記周辺領域は、
前記素子領域に近い内側領域と、
前記内側領域の周囲に位置する外側領域を有し、
隣接する前記トレンチに挟まれた前記半導体基体の幅は、前記外側領域よりも前記内側領域の方が広く、
隣接する前記トレンチの配置間隔をトレンチピッチP1、隣接する前記トレンチ間の前記半導体基体の上面が露出した領域の幅をトレンチピラーP2として、トレンチ比P1/P2が1.5より小さい領域が前記内側領域であり、
前記半導体基体が、第1導電型の第1半導体層の上に第2導電型の第2半導体層が積層された構造であり、
前記トレンチが、前記第2半導体層の上面から延伸して前記第1半導体層に達して形成され、
前記内側領域の前記トレンチの底部から前記第1半導体層と前記第2半導体層とのPN接合面までの距離が、前記外側領域の前記トレンチの底部から前記第1半導体層と前記第2半導体層とのPN接合面までの距離よりも小さいことを特徴とする半導体装置。 - 素子領域と前記素子領域の周囲を囲む周辺領域が上面に定義された半導体基体を備え、
前記半導体基体の上面から膜厚方向に延伸する溝の内壁面に配置された絶縁膜、及び前記溝の内部で前記絶縁膜の上に配置された導電体膜をそれぞれ有する複数のトレンチが、前記素子領域の周囲を囲んで前記周辺領域に多重に配置され、
前記周辺領域は、
前記素子領域に近い内側領域と、
前記内側領域の周囲に位置する外側領域を有し、
隣接する前記トレンチに挟まれた前記半導体基体の幅は、前記外側領域よりも前記内側領域の方が広く、
隣接する前記トレンチの配置間隔をトレンチピッチP1、隣接する前記トレンチ間の前記半導体基体の上面が露出した領域の幅をトレンチピラーP2として、トレンチ比P1/P2が1.5より小さい領域が前記内側領域であり、
前記内側領域に、前記トレンチの前記導電体膜と電気的に接続し、前記トレンチの開口部から前記素子領域に向かう延在部が前記半導体基体の上面の上に配置され、
前記外側領域には、前記トレンチの開口部から前記素子領域に向かう前記延在部が配置されていない、若しくは前記外側領域に配置された前記延在部の前記半導体基体の上面に沿った距離が前記内側領域に配置された前記延在部よりも短いことを特徴とする半導体装置。 - 前記内側領域に前記トレンチが複数配置され、
前記内側領域において、前記素子領域に近い前記トレンチほど、前記延在部の前記半導体基体の上面に沿った距離が長いことを特徴とする請求項2に記載の半導体装置。 - 前記外側領域において、前記半導体基体の上面の上に前記延在部が配置されていないことを特徴とする請求項2に記載の半導体装置。
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PCT/JP2018/046035 WO2020121508A1 (ja) | 2018-12-14 | 2018-12-14 | 半導体装置 |
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JP7201005B2 true JP7201005B2 (ja) | 2023-01-10 |
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JP (1) | JP7201005B2 (ja) |
KR (1) | KR102472577B1 (ja) |
CN (1) | CN112913030B (ja) |
WO (1) | WO2020121508A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123570A (ja) | 2005-10-28 | 2007-05-17 | Toyota Industries Corp | 半導体装置 |
JP2008085086A (ja) | 2006-09-27 | 2008-04-10 | Toyota Industries Corp | 半導体装置 |
JP2009032728A (ja) | 2007-07-24 | 2009-02-12 | Sanken Electric Co Ltd | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US9484451B2 (en) * | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
CN102484131B (zh) * | 2009-08-28 | 2015-06-17 | 三垦电气株式会社 | 半导体装置 |
JP5858933B2 (ja) * | 2011-02-02 | 2016-02-10 | ローム株式会社 | 半導体装置 |
JP2013055347A (ja) | 2012-11-08 | 2013-03-21 | Sanken Electric Co Ltd | 半導体装置 |
JP5838176B2 (ja) * | 2013-02-12 | 2016-01-06 | サンケン電気株式会社 | 半導体装置 |
WO2017099095A1 (ja) * | 2015-12-11 | 2017-06-15 | 富士電機株式会社 | 半導体装置および製造方法 |
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- 2018-12-14 JP JP2020559662A patent/JP7201005B2/ja active Active
- 2018-12-14 WO PCT/JP2018/046035 patent/WO2020121508A1/ja active Application Filing
- 2018-12-14 CN CN201880098705.8A patent/CN112913030B/zh active Active
- 2018-12-14 KR KR1020217011061A patent/KR102472577B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007123570A (ja) | 2005-10-28 | 2007-05-17 | Toyota Industries Corp | 半導体装置 |
JP2008085086A (ja) | 2006-09-27 | 2008-04-10 | Toyota Industries Corp | 半導体装置 |
JP2009032728A (ja) | 2007-07-24 | 2009-02-12 | Sanken Electric Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
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JPWO2020121508A1 (ja) | 2021-10-21 |
KR20210055769A (ko) | 2021-05-17 |
KR102472577B1 (ko) | 2022-11-29 |
CN112913030A (zh) | 2021-06-04 |
CN112913030B (zh) | 2024-05-10 |
WO2020121508A1 (ja) | 2020-06-18 |
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