JP7311916B2 - エピタキシャル成長装置のプロセスチャンバ - Google Patents

エピタキシャル成長装置のプロセスチャンバ Download PDF

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Publication number
JP7311916B2
JP7311916B2 JP2021534524A JP2021534524A JP7311916B2 JP 7311916 B2 JP7311916 B2 JP 7311916B2 JP 2021534524 A JP2021534524 A JP 2021534524A JP 2021534524 A JP2021534524 A JP 2021534524A JP 7311916 B2 JP7311916 B2 JP 7311916B2
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JP
Japan
Prior art keywords
susceptor
process chamber
semiconductor substrate
lift
shaft
Prior art date
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JP2021534524A
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English (en)
Japanese (ja)
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JPWO2021014657A1 (https=
JPWO2021014657A5 (https=
Inventor
晃 岡部
幸生 竹永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epicrew Corp
Original Assignee
Epicrew Corp
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Publication date
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Publication of JPWO2021014657A1 publication Critical patent/JPWO2021014657A1/ja
Publication of JPWO2021014657A5 publication Critical patent/JPWO2021014657A5/ja
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021534524A 2019-07-25 2019-07-25 エピタキシャル成長装置のプロセスチャンバ Active JP7311916B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/029303 WO2021014657A1 (ja) 2019-07-25 2019-07-25 エピタキシャル成長装置のプロセスチャンバ

Publications (3)

Publication Number Publication Date
JPWO2021014657A1 JPWO2021014657A1 (https=) 2021-01-28
JPWO2021014657A5 JPWO2021014657A5 (https=) 2022-06-01
JP7311916B2 true JP7311916B2 (ja) 2023-07-20

Family

ID=74192653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021534524A Active JP7311916B2 (ja) 2019-07-25 2019-07-25 エピタキシャル成長装置のプロセスチャンバ

Country Status (7)

Country Link
US (1) US20220254676A1 (https=)
EP (1) EP4006956A4 (https=)
JP (1) JP7311916B2 (https=)
KR (1) KR102697878B1 (https=)
CN (1) CN114026675A (https=)
TW (1) TWI853949B (https=)
WO (1) WO2021014657A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102478833B1 (ko) * 2021-09-29 2022-12-16 에스케이씨솔믹스 주식회사 서셉터 샤프트 가공 지그
CN116024653A (zh) * 2023-02-28 2023-04-28 西安奕斯伟材料科技股份有限公司 升降装置和外延反应设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024047A (ja) 1999-07-07 2001-01-26 Applied Materials Inc 基板支持装置
JP2002231794A (ja) 2001-02-02 2002-08-16 Tokyo Electron Ltd 被処理体の載置機構
JP2003124287A (ja) 2001-10-19 2003-04-25 Komatsu Electronic Metals Co Ltd エピタキシャルウェハ製造装置及びウェハ製造方法
JP2007123810A (ja) 2005-09-30 2007-05-17 Tokyo Electron Ltd 基板の載置機構及び基板処理装置
JP2009246229A (ja) 2008-03-31 2009-10-22 Fujitsu Microelectronics Ltd 基板支持装置
WO2019004201A1 (ja) 2017-06-26 2019-01-03 エピクルー ユーエスエー インコーポレイテッド プロセスチャンバ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US6120609A (en) * 1996-10-25 2000-09-19 Applied Materials, Inc. Self-aligning lift mechanism
DE10051125A1 (de) * 2000-10-16 2002-05-02 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
US20040177813A1 (en) * 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
WO2013005481A1 (ja) * 2011-07-05 2013-01-10 エピクルー株式会社 サセプタ装置及びこれを備えた成膜装置
JP5386046B1 (ja) * 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
JP6068255B2 (ja) 2013-05-13 2017-01-25 大陽日酸株式会社 気相成長装置および気相成長装置の部材搬送方法
JP6428358B2 (ja) * 2015-02-20 2018-11-28 株式会社Sumco エピタキシャル成長装置及びサセプタサポートシャフト
TWI615917B (zh) * 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 承托器及磊晶生長裝置
JP6424726B2 (ja) * 2015-04-27 2018-11-21 株式会社Sumco サセプタ及びエピタキシャル成長装置
US9892956B1 (en) * 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024047A (ja) 1999-07-07 2001-01-26 Applied Materials Inc 基板支持装置
JP2002231794A (ja) 2001-02-02 2002-08-16 Tokyo Electron Ltd 被処理体の載置機構
JP2003124287A (ja) 2001-10-19 2003-04-25 Komatsu Electronic Metals Co Ltd エピタキシャルウェハ製造装置及びウェハ製造方法
JP2007123810A (ja) 2005-09-30 2007-05-17 Tokyo Electron Ltd 基板の載置機構及び基板処理装置
JP2009246229A (ja) 2008-03-31 2009-10-22 Fujitsu Microelectronics Ltd 基板支持装置
WO2019004201A1 (ja) 2017-06-26 2019-01-03 エピクルー ユーエスエー インコーポレイテッド プロセスチャンバ

Also Published As

Publication number Publication date
CN114026675A (zh) 2022-02-08
WO2021014657A1 (ja) 2021-01-28
US20220254676A1 (en) 2022-08-11
EP4006956A4 (en) 2023-04-19
KR20220042114A (ko) 2022-04-04
JPWO2021014657A1 (https=) 2021-01-28
TW202105569A (zh) 2021-02-01
EP4006956A1 (en) 2022-06-01
TWI853949B (zh) 2024-09-01
KR102697878B1 (ko) 2024-08-23

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