JPWO2021014657A1 - - Google Patents
Info
- Publication number
- JPWO2021014657A1 JPWO2021014657A1 JP2021534524A JP2021534524A JPWO2021014657A1 JP WO2021014657 A1 JPWO2021014657 A1 JP WO2021014657A1 JP 2021534524 A JP2021534524 A JP 2021534524A JP 2021534524 A JP2021534524 A JP 2021534524A JP WO2021014657 A1 JPWO2021014657 A1 JP WO2021014657A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/029303 WO2021014657A1 (ja) | 2019-07-25 | 2019-07-25 | エピタキシャル成長装置のプロセスチャンバ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021014657A1 true JPWO2021014657A1 (https=) | 2021-01-28 |
| JPWO2021014657A5 JPWO2021014657A5 (https=) | 2022-06-01 |
| JP7311916B2 JP7311916B2 (ja) | 2023-07-20 |
Family
ID=74192653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021534524A Active JP7311916B2 (ja) | 2019-07-25 | 2019-07-25 | エピタキシャル成長装置のプロセスチャンバ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220254676A1 (https=) |
| EP (1) | EP4006956A4 (https=) |
| JP (1) | JP7311916B2 (https=) |
| KR (1) | KR102697878B1 (https=) |
| CN (1) | CN114026675A (https=) |
| TW (1) | TWI853949B (https=) |
| WO (1) | WO2021014657A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102478833B1 (ko) * | 2021-09-29 | 2022-12-16 | 에스케이씨솔믹스 주식회사 | 서셉터 샤프트 가공 지그 |
| CN116024653A (zh) * | 2023-02-28 | 2023-04-28 | 西安奕斯伟材料科技股份有限公司 | 升降装置和外延反应设备 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001024047A (ja) * | 1999-07-07 | 2001-01-26 | Applied Materials Inc | 基板支持装置 |
| JP2002231794A (ja) * | 2001-02-02 | 2002-08-16 | Tokyo Electron Ltd | 被処理体の載置機構 |
| JP2003124287A (ja) * | 2001-10-19 | 2003-04-25 | Komatsu Electronic Metals Co Ltd | エピタキシャルウェハ製造装置及びウェハ製造方法 |
| JP2007123810A (ja) * | 2005-09-30 | 2007-05-17 | Tokyo Electron Ltd | 基板の載置機構及び基板処理装置 |
| JP2009246229A (ja) * | 2008-03-31 | 2009-10-22 | Fujitsu Microelectronics Ltd | 基板支持装置 |
| WO2019004201A1 (ja) * | 2017-06-26 | 2019-01-03 | エピクルー ユーエスエー インコーポレイテッド | プロセスチャンバ |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
| US5879128A (en) * | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
| US6120609A (en) * | 1996-10-25 | 2000-09-19 | Applied Materials, Inc. | Self-aligning lift mechanism |
| DE10051125A1 (de) * | 2000-10-16 | 2002-05-02 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
| US20040177813A1 (en) * | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
| US20060005770A1 (en) * | 2004-07-09 | 2006-01-12 | Robin Tiner | Independently moving substrate supports |
| WO2013005481A1 (ja) * | 2011-07-05 | 2013-01-10 | エピクルー株式会社 | サセプタ装置及びこれを備えた成膜装置 |
| JP5386046B1 (ja) * | 2013-03-27 | 2014-01-15 | エピクルー株式会社 | サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置 |
| JP6068255B2 (ja) | 2013-05-13 | 2017-01-25 | 大陽日酸株式会社 | 気相成長装置および気相成長装置の部材搬送方法 |
| JP6428358B2 (ja) * | 2015-02-20 | 2018-11-28 | 株式会社Sumco | エピタキシャル成長装置及びサセプタサポートシャフト |
| TWI615917B (zh) * | 2015-04-27 | 2018-02-21 | Ｓｕｍｃｏ股份有限公司 | 承托器及磊晶生長裝置 |
| JP6424726B2 (ja) * | 2015-04-27 | 2018-11-21 | 株式会社Sumco | サセプタ及びエピタキシャル成長装置 |
| US9892956B1 (en) * | 2016-10-12 | 2018-02-13 | Lam Research Corporation | Wafer positioning pedestal for semiconductor processing |
-
2019
- 2019-07-25 CN CN201980097920.0A patent/CN114026675A/zh active Pending
- 2019-07-25 EP EP19938181.5A patent/EP4006956A4/en active Pending
- 2019-07-25 US US17/629,649 patent/US20220254676A1/en not_active Abandoned
- 2019-07-25 JP JP2021534524A patent/JP7311916B2/ja active Active
- 2019-07-25 WO PCT/JP2019/029303 patent/WO2021014657A1/ja not_active Ceased
- 2019-07-25 KR KR1020227001165A patent/KR102697878B1/ko active Active
-
2020
- 2020-06-11 TW TW109119631A patent/TWI853949B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001024047A (ja) * | 1999-07-07 | 2001-01-26 | Applied Materials Inc | 基板支持装置 |
| JP2002231794A (ja) * | 2001-02-02 | 2002-08-16 | Tokyo Electron Ltd | 被処理体の載置機構 |
| JP2003124287A (ja) * | 2001-10-19 | 2003-04-25 | Komatsu Electronic Metals Co Ltd | エピタキシャルウェハ製造装置及びウェハ製造方法 |
| JP2007123810A (ja) * | 2005-09-30 | 2007-05-17 | Tokyo Electron Ltd | 基板の載置機構及び基板処理装置 |
| JP2009246229A (ja) * | 2008-03-31 | 2009-10-22 | Fujitsu Microelectronics Ltd | 基板支持装置 |
| WO2019004201A1 (ja) * | 2017-06-26 | 2019-01-03 | エピクルー ユーエスエー インコーポレイテッド | プロセスチャンバ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7311916B2 (ja) | 2023-07-20 |
| CN114026675A (zh) | 2022-02-08 |
| WO2021014657A1 (ja) | 2021-01-28 |
| US20220254676A1 (en) | 2022-08-11 |
| EP4006956A4 (en) | 2023-04-19 |
| KR20220042114A (ko) | 2022-04-04 |
| TW202105569A (zh) | 2021-02-01 |
| EP4006956A1 (en) | 2022-06-01 |
| TWI853949B (zh) | 2024-09-01 |
| KR102697878B1 (ko) | 2024-08-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220524 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220524 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230613 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230630 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7311916 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |