CN114026675A - 外延生长装置的工艺腔室 - Google Patents

外延生长装置的工艺腔室 Download PDF

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CN114026675A
CN114026675A CN201980097920.0A CN201980097920A CN114026675A CN 114026675 A CN114026675 A CN 114026675A CN 201980097920 A CN201980097920 A CN 201980097920A CN 114026675 A CN114026675 A CN 114026675A
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susceptor
semiconductor substrate
process chamber
fingerboard
lift
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岡部晃
竹永幸生
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Aibike Co ltd
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Abstract

一种外延生长装置的工艺腔室，其是反应处理半导体基板的工艺腔室，具有：基座，由仅支撑径向中心部且沿上下方向延伸的轴构件支撑并配置在所述工艺腔室中，所述基座上载置所述半导体基板；指板晶圆升降机，配置在所述基座的下方并且被构成为可在所述轴构件的轴向方向上移动；升降销，随着所述指板晶圆升降机接近所述基座，使所述半导体基板从所述基座的上表面向上方位移；所述基座中形成有所述升降销穿过的贯通孔。

Description

外延生长装置的工艺腔室
技术领域
本发明涉及外延生长装置的工艺腔室。
背景技术
以往，在半导体制造装置中，已知有通过热处理等在半导体基板上进行成膜的工艺腔室。
作为这样的工艺腔室，在专利文献1中公开了具有用于取出半导体基板的可上升的基座的构成。
现有技术文献
专利文献
专利文献1：日本特开2014-222693号公报
发明内容
发明所要解决的课题
但是，在专利文献1记载的发明中，由于基座上升，因此存在工艺腔室整体在上下方向上增大的问题。
因此，本发明的目的在于提供一种能够抑制上下方向增大的外延生长装置的工艺腔室。
解决课题的技术方案
为解决上述课题，本发明的外延生长装置的工艺腔室为反应处理半导体基板的工艺腔室，其具有：基座，由仅支撑径向中心部且沿上下方向延伸的轴构件支撑并配置在工艺腔室中，基座上载置半导体基板；指板晶圆升降机，配置在基座的下方并且被构成为可在轴构件的轴向方向上移动；升降销，随着指板晶圆升降机接近基座，使半导体基板从基座的上表面向上方位移。基座中形成有升降销穿过的贯通孔。
另外，指板晶圆升降机具有沿上下方向延伸的支撑管，及从支撑管的上端部沿径向延伸的多个支撑臂。支撑臂的径向方向上的外端部形成有与升降销沿上下方向对置的顶端部。顶端部的周方向的尺寸可以大于支撑臂的除了顶端部之外的部分。
另外，基座的上表面的除了外周缘部以外的部分，在载置半导体基板的同时，形成比外周缘部凹陷的载置面，贯通孔可以形成在载置面上沿径向方向的外端部处。
发明的效果
根据本发明的外延生长装置的工艺腔室，具有仅支撑径向中心部的基座。然后，通过提升穿过基座的贯通孔的升降销，可以使半导体基板向上方位移。
因此，与例如将基座大幅升高以将半导体基板向上方位移的构成相比，可以减小在上下方向上位移部分的构成，抑制工艺腔室的上下方向的增大。
附图说明
图1是根据本发明的一种实施方式的具备外延生长装置的工艺腔室的半导体制造装置的纵断面图。
图2是在图1所示的工艺腔室中，(a)是显示基座单元的立体图，(b)是(a)中的基座的透视图。
图3(a)是基座单元的正视图，(b)是指板晶圆升降机的平面图。
图4是表示将半导体基板运送到图1所示的工艺腔室内的工序图。
图5是表示在图1所示的工艺腔室中反应处理半导体基板的工序图。
图6是表示从图1所示的工艺腔室内取出半导体基板的工序图。
具体实施方式
其次，参照附图对根据本发明的实施方式的外延生长装置的工艺腔室2进行说明。
本实施方式的工艺腔室2是在半导体制造装置1中，进行通过热处理等在半导体基板S上成膜的反应处理的腔室。首先，描述半导体制造装置1的构成。
如图1所示，半导体制造装置1具有工艺腔室2，将半导体基板S运送至工艺腔室2的内部的运送腔室3，和与运送腔室3连接的负载锁定腔室4。
运送腔室3配置在工艺腔室2和负载锁定腔室4之间。
运送腔室3具有运送机器人7。运送机器人7具有三个机器人臂5a、5b和5c。机器人臂5a、5b和5c围绕旋转轴A可旋转地配置。机器人臂5a、5b和5c可以通过绕旋转轴A旋转而在水平方向上伸缩。
多个机器人臂5a、5b和5c中位于最上方的机器人臂5a的顶端，设置有刀片5A。可以以刀片5A的上表面载置有半导体基板S的状态，通过三个机械臂5a、5b和5c在水平方向上伸缩来运送半导体基板S。
L形闸阀8配置在运送腔室3中的与工艺腔室2相连的部分。由此，可以可靠地确保工艺腔室2与运送腔室3之间的气密性。
在负载锁定腔室4中，在负载锁定腔室4的与运送腔室3相连的部分中配置有气密门，从而可以将半导体基板S从运送腔室3取出和放入。由此，能够可靠地确保负载锁定腔室4和运送腔室3之间的气密。
工艺腔室2具有载置半导体基板S的基座单元10和内部配置有基座单元10的腔室主体20。
用于加热半导体基板S的热源(未示出)配置在腔室本体20的上侧及下侧。热源，例如，可以采用卤素灯，但不限于该示例。
接下来，将详细说明基座单元10的构成。
基座单元10具有：载置半导体基板S的基座11、配置在基座11下方的指板晶圆升降机12、及随指板晶圆升降机12接近基座11，从基座11的上表面向上方位移半导体基板S的升降销13。
如图2和3所示，基座11被支撑并配置在工艺腔室2中。基座11的上表面上载置半导体基板S。基座11仅在径向中心部由基座轴(轴构件)15从下方支撑。基座11在平面图中呈现圆板形状。
在以下说明中，与基座11正交并通过中心的直线称为中心轴线O1。另外，与中心轴线O1正交的方向称为径向，绕中心轴线O1旋转的方向称为周方向。
在基座11的下表面的径向中心部形成有向下方突出并且下端部向下开口的嵌合筒11A。基座轴15的上端部嵌合在嵌合筒11A的内侧。
基座11的上表面的除了外周缘部以外的部分，在载置半导体基板S的同时，形成比外周缘部凹陷的载置面11B。
基座11和基座轴15被构造为可在周方向上旋转。基座11形成有沿上下方向穿透基座11的贯通孔14。贯通孔14形成在基座11的载置面11B上的径向外端部。
多个贯通孔14沿周方向间隔排列。在图示的例子中，三个贯通孔14沿周方向等间隔排列。贯通孔14上端部的内径朝向上方逐渐增大。采用这种形状，可以防止升降销13从贯通孔14中脱落。
基座轴15沿上下方向延伸并且与中心轴线O1同轴配置。如图1所示，基座轴15由轴基座支撑件15A和热电偶15B组成。
轴基座支撑件15A呈筒状，热电偶15B插入其内侧。轴基座支撑件15A和热电偶15B与中心轴线O1同轴配置。
轴基座支撑件15A的上端部直径向上方逐渐缩小。热电偶15B沿上下方向笔直延伸。
在轴基座支撑件15A的上端部中，缩小的部分嵌合在基座11的嵌合筒11A的内侧。基座11和基座轴15在周方向上的相互的位置固定。
指板晶圆升降机12被配置为可在基座轴15的轴向方向上移动并且被配置为可相对于基座11和基座轴15上升。指板晶圆升降机12连接在沿上下方向延伸的轴晶圆升降机16的上方。
指板晶圆升降机12连接于轴晶圆升降机16的上端部，其具有沿上下方向延伸的支撑管12A和从支撑管12A的上端部沿径向延伸的多个支撑臂12B。
轴晶圆升降机16和支撑管12A分开形成。另外，轴晶圆升降机16和支撑管12A可以一体地形成。支撑管12A和支撑臂12B一体地形成。另外，支撑管12A和支撑臂12B可以分开形成。
轴晶圆升降机16与基座轴15同轴地配置。基座轴15插入轴晶圆升降机16的内侧。轴晶圆升降机16被配置为可相对于基座轴15在上下方向和周方向上相对位移。
支撑臂12B从支撑管12A的上端部向径向的外侧放射状地延伸。图示示例中，三个支撑臂12B以120°均等配置。支撑臂12B沿水平方向笔直延伸。
支撑臂12B的径向外端部形成有沿上下方向与升降销13对置的升降板(顶端部)12C。升降板12C在周方向上的尺寸大于支撑臂12B的除了升降板12C之外的部分。
如图3(b)所示，升降板12C具有矩形形状，在平面图中其中两条边在基座11的外周缘的切线方向上延伸，其余两条边沿径向延伸。升降板12C的周方向尺寸大于径向尺寸。
在平面图中，升降销13位于升降板12C的周方向和径向的中心部。
随着指板晶圆升降机12上升，升降销13被提升到指板晶圆升降机12的升降板12C上。
升降销13插入贯通孔14的内侧并随上升移动而穿过贯通孔14。升降销13分别位于三个贯通孔14的内侧。升降销13配置在不干涉机器人臂5a的刀片5A的位置。
升降销13的上端部的外径向上逐渐增大。然后，升降销13的上端部通过在上下方向上与贯通孔14的上端部卡合，使得升降销13保持在贯通孔14的内表面上。
升降销13的下端部以保持在贯通孔14的内表面上的状态从基座11向下突出。在这种状态下，升降销13的上端面朝上方与基座11的上表面齐平。
在平面图中，升降销13形成在基座11的载置面11B的径向上的外端部。它配置在基座11的外周部上。
接着，对外延生长装置的工艺腔室2中的半导体基板S的处理工序进行说明。
首先，参考图4说明将半导体基板S运送到工艺腔室2中的过程。
如图4(a)所示，使机械臂5a的刀片5A从运送口进入工艺腔室2内。此时，将待进行反应处理的半导体基板S配置在刀片5A的上表面上。然后，如图4(b)所示，使半导体基板S位于基座11的上方。
接着，如图4(c)所示，使指板晶圆升降机12上升。此时，升降销13通过升降板12C与升降销13的下端部抵接而被提升。
由此，升降销13使半导体基板S向上位移，从而在半导体基板S和刀片5A之间形成上下方向的间隙。
然后，如图4(d)所示，通过朝向运送口侧水平移动刀片5A，半导体基板S以被升降销13保持的状态留置在工艺腔室2中。之后，刀片5A从工艺腔室2中退出。
接下来，将参考图5说明在工艺腔室2中反应处理半导体基板S的工序。
首先，如图5(a)所示，通过降低指板晶圆升降机12来降低升降销13。由此，由升降销13保持的半导体基板S向下位移，载置在基座11的上表面上。
此时，指板晶圆升降机12下降直到在升降板12C和升降销13之间形成上下方向上的间隙。由此，在随后的反应处理过程中，可以抑制基座11和半导体基板S的热量传递到指板晶圆升降机12。
然后，如图5(b)所示，对半导体基板S加热进行反应处理。此时，通过使基座11与基座轴15一起沿周方向旋转，热量沿周方向均匀地传递到半导体基板S。由此，在半导体基板S的表面上形成膜。
最后，将参考图6说明从工艺腔室2中取出半导体基板S的工序。
首先，如图6(a)所示，通过将刀片5A推进到工艺腔室2中并上升指板晶圆升降机12，与上述同样地，反应处理后的半导体基板S向上位移。然后，在半导体基板S和基座11之间形成上下方向上的间隙。
接着，如图6(b)所示，将刀片5A沿水平方向移动到基座11侧并放置在半导体基板S和基座11之间的间隙中。
然后，如图6(c)所示，通过下降指板晶圆升降机12，将半导体基板S载置在刀片5A的上表面上。
最后，通过将刀片5A沿水平方向移动到运送口侧，从工艺腔室2中运送出半导体基板S。之后，对半导体基板S实施后工序。
如上所述，根据本实施方式的外延生长装置的工艺腔室2，具有仅支撑径向中心部的基座11。然后，通过使穿过基座11的贯通孔14的升降销13上升，而不会大幅上升基座11，可以使半导体基板S向上位移。
因此，例如与使基座11上升而使半导体基板S向上方大幅位移的结构相比，能够减少在上下方向上位移的部分的结构，可以抑制工艺腔室2在上下方向的增大。
此外，由于支撑基座11的基座轴15仅支撑基座11的径向中心部，例如，与在基座轴15的上端部设置多个径向延伸的臂构件的结构相比，可以减少在工艺腔室2中位于基座11下方的部件的数量。
由此，在工艺腔室2的下侧当基座11被诸如卤素灯的热源加热时，从热源辐射的热可以被有效地传递到安装在基座11上的半导体基板S，而不会被位于基座11下方的部件所遮蔽。
此外，由于位于支撑臂12B的顶端部的升降板12C的周方向上的尺寸比支撑臂12B中的除了升降板12C之外的部分大，因此即使升降销13和支撑臂12B在周方向的位置即使有少许错位，通过升降板12C也可以可靠地使升降销13相对于基座11提升。
此外，由于贯通孔14形成在基座11的载置面11B上的径向外端部处，因此配置在贯通孔14的升降销13可以配置在半导体基板S的外周部上。由此，能够在升降销13使半导体基板S向上方位移时，使半导体基板S的外周部上升，并且能够通过升降销13使半导体基板S向上方位移时的半导体基板S的姿势稳定。
应当注意，上述实施方式仅仅是本发明的典型实施方式的示例。因此，在不脱离本发明的精神的情况下，可以对上述实施方式进行各种修改。
例如，虽然在上述实施方式中，已经示出了一种结构，即升降板12C在周方向上的尺寸大于支撑臂12B中的除了升降板12C之外的部分的尺寸，但是不限于这样的实施方式。支撑臂12B整体，包括顶端部，其周方向的尺寸可以同样地形成。
另外，在上述实施方式中，示出了在基座11的载置面11B的径向外侧端部形成有贯通孔14的结构，但本发明不限于此。贯通孔14可以形成在载置面11B径向的内侧。
此外，本发明不限于上述变形示例，并且可以选择和适当组合这些变形示例，或者可以实施其他变形。
符号说明
1半导体制造装置
2工艺腔室
11基座
12指板晶圆升降机
12A支撑管
12B支撑臂
12C升降板(顶端部)
13升降销
14贯通孔
15基座轴(轴构件)
16轴晶圆升降机
S半导体基板。

Claims (3)

1.一种反应处理半导体基板的外延生长装置的工艺腔室，
具有：基座，由仅支撑径向中心部且沿上下方向延伸的轴构件支撑并配置在所述工艺腔室中，所述基座上载置所述半导体基板；
指板晶圆升降机，配置在所述基座的下方并且被构成为可在所述轴构件的轴向方向上移动；
升降销，随着所述指板晶圆升降机接近所述基座，使所述半导体基板从所述基座的上表面向上位移；
所述基座中形成有所述升降销穿过的贯通孔。
2.根据权利要求1所述的工艺腔室，其特征在于：
所述指板晶圆升降机具有沿上下方向延伸的支撑管，及从支撑管的上端部沿径向延伸的多个支撑臂，
所述支撑臂的径向方向上的外端部形成有与所述升降销沿上下方向对置的顶端部，
所述顶端部的周方向的尺寸大于所述支撑臂的除了所述顶端部之外的部分。
3.根据权利要求1或2所述的工艺腔室，其特征在于：
所述基座的上表面的除了外周缘部以外的部分，在载置所述半导体基板的同时，形成比所述外周缘部凹陷的载置面，
所述贯通孔形成在所述载置面的径向外端部处。
CN201980097920.0A 2019-07-25 2019-07-25 外延生长装置的工艺腔室 Pending CN114026675A (zh)

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