JP7293211B2 - 高エネルギー原子層エッチング - Google Patents

高エネルギー原子層エッチング Download PDF

Info

Publication number
JP7293211B2
JP7293211B2 JP2020519333A JP2020519333A JP7293211B2 JP 7293211 B2 JP7293211 B2 JP 7293211B2 JP 2020519333 A JP2020519333 A JP 2020519333A JP 2020519333 A JP2020519333 A JP 2020519333A JP 7293211 B2 JP7293211 B2 JP 7293211B2
Authority
JP
Japan
Prior art keywords
substrate
bias
plasma
pulsing
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020519333A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020536393A5 (enExample
JP2020536393A (ja
Inventor
ヤン・ウェンビン
タン・サマンサ
ムケルジー・タマル
カナリク・ケレン・ジェイコブス
パン・ヤン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2020536393A publication Critical patent/JP2020536393A/ja
Publication of JP2020536393A5 publication Critical patent/JP2020536393A5/ja
Priority to JP2023093589A priority Critical patent/JP7682948B2/ja
Application granted granted Critical
Publication of JP7293211B2 publication Critical patent/JP7293211B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2020519333A 2017-10-06 2018-10-02 高エネルギー原子層エッチング Active JP7293211B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023093589A JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201762569443P 2017-10-06 2017-10-06
US62/569,443 2017-10-06
US201762599613P 2017-12-15 2017-12-15
US62/599,613 2017-12-15
US16/148,939 2018-10-01
US16/148,939 US10763083B2 (en) 2017-10-06 2018-10-01 High energy atomic layer etching
PCT/US2018/054001 WO2019070737A1 (en) 2017-10-06 2018-10-02 HIGH-ENERGY ATOMIC LAYER ETCHING

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023093589A Division JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

Publications (3)

Publication Number Publication Date
JP2020536393A JP2020536393A (ja) 2020-12-10
JP2020536393A5 JP2020536393A5 (enExample) 2022-01-11
JP7293211B2 true JP7293211B2 (ja) 2023-06-19

Family

ID=65994055

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020519333A Active JP7293211B2 (ja) 2017-10-06 2018-10-02 高エネルギー原子層エッチング
JP2023093589A Active JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023093589A Active JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

Country Status (7)

Country Link
US (3) US10763083B2 (enExample)
EP (1) EP3692567B1 (enExample)
JP (2) JP7293211B2 (enExample)
KR (1) KR20200053623A (enExample)
CN (1) CN111448641B (enExample)
TW (1) TWI808998B (enExample)
WO (1) WO2019070737A1 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
EP3776636B1 (en) 2018-03-30 2025-05-07 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
KR102955829B1 (ko) 2018-11-14 2026-04-23 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US11518674B2 (en) * 2019-02-04 2022-12-06 Ut-Battelle, Llc Atomic-scale e-beam sculptor
US11270893B2 (en) * 2019-04-08 2022-03-08 International Business Machines Corporation Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures
KR20250065429A (ko) 2019-04-29 2025-05-12 램 리써치 코포레이션 서브트랙티브 (subtractive) 금속 에칭을 위한 원자 층 에칭
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
TWI849159B (zh) 2019-06-28 2024-07-21 美商蘭姆研究公司 光阻膜的乾式腔室清潔
US12256645B2 (en) 2019-07-31 2025-03-18 Lam Research Corporation Chemical etch nonvolatile materials for MRAM patterning
US11817295B2 (en) 2019-08-14 2023-11-14 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
JP7450455B2 (ja) * 2020-05-13 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113808931A (zh) * 2020-06-11 2021-12-17 中国科学院微电子研究所 圆弧形鳍顶形成方法及鳍式场效应晶体管
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
JP7504686B2 (ja) * 2020-07-15 2024-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11823910B2 (en) * 2020-07-31 2023-11-21 Tokyo Electron Limited Systems and methods for improving planarity using selective atomic layer etching (ALE)
KR102821634B1 (ko) * 2020-08-18 2025-06-18 주식회사 원익아이피에스 원자층 식각 방법 및 장치
FR3113769B1 (fr) * 2020-09-03 2023-03-24 Commissariat Energie Atomique Procede de gravure d’une couche de materiau iii-n
US11658043B2 (en) * 2020-09-03 2023-05-23 Applied Materials, Inc. Selective anisotropic metal etch
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
KR20250142946A (ko) 2020-12-08 2025-09-30 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
US12280091B2 (en) 2021-02-03 2025-04-22 Lam Research Corporation Etch selectivity control in atomic layer etching
JP2024510255A (ja) 2021-03-18 2024-03-06 ラム リサーチ コーポレーション インジウムガリウム亜鉛酸化物のエッチング
KR20230085050A (ko) * 2021-12-06 2023-06-13 (주)선재하이테크 진공 챔버용 플렉시블 진공자외선 이오나이저
US12183583B2 (en) * 2021-12-14 2024-12-31 Tokyo Electron Limited Remote source pulsing with advanced pulse control
CN118843924A (zh) * 2022-03-18 2024-10-25 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
KR20240162514A (ko) * 2022-03-22 2024-11-15 램 리써치 코포레이션 탄소 함유층의 높은 에너지 원자층 에칭
US20250210363A1 (en) * 2022-03-22 2025-06-26 Lam Research Corporation Fast atomic layer etch
JP7462065B2 (ja) * 2022-03-29 2024-04-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
US12009218B2 (en) * 2022-05-06 2024-06-11 Applied Materials, Inc. Pulsed etch process
US20260060018A1 (en) * 2022-08-31 2026-02-26 Lam Research Corporation Nitride thermal atomic layer etch
KR102797232B1 (ko) * 2022-11-28 2025-04-23 성균관대학교산학협력단 원자층 식각 방법
TW202439443A (zh) * 2023-03-27 2024-10-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US12685053B2 (en) * 2023-09-13 2026-07-14 Hitachi High-Tech Corporation Plasma processing method
KR102775721B1 (ko) * 2024-02-15 2025-03-05 오스 주식회사 원자층 식각을 위한 기판 처리 장치
TWI892868B (zh) * 2024-10-17 2025-08-01 態金材料科技股份有限公司 雷射改質並藉金屬玻璃微粒子轟擊之乾式蝕刻法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2017063186A (ja) 2015-08-19 2017-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ タングステンおよび他の金属の原子層エッチング

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798056A (en) 1972-04-05 1974-03-19 Bell Telephone Labor Inc Electroless plating process
JPH03133128A (ja) 1989-10-19 1991-06-06 Res Dev Corp Of Japan ディジタル・エッチング方法
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6527855B2 (en) 2000-10-10 2003-03-04 Rensselaer Polytechnic Institute Atomic layer deposition of cobalt from cobalt metallorganic compounds
JP4152600B2 (ja) * 2001-03-19 2008-09-17 株式会社リコー 微粒子の配列方法
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
CN100355058C (zh) 2001-05-04 2007-12-12 东京毅力科创株式会社 具有连续沉积和蚀刻的电离pvd
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US6664122B1 (en) 2001-10-19 2003-12-16 Novellus Systems, Inc. Electroless copper deposition method for preparing copper seed layers
US7690324B1 (en) 2002-06-28 2010-04-06 Novellus Systems, Inc. Small-volume electroless plating cell
US6841943B2 (en) 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
TWI303090B (en) 2002-08-13 2008-11-11 Lam Res Corp Method for in-situ monitoring of patterned substrate processing using reflectometry
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US7829152B2 (en) 2006-10-05 2010-11-09 Lam Research Corporation Electroless plating method and apparatus
KR100905278B1 (ko) 2007-07-19 2009-06-29 주식회사 아이피에스 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법
US9059116B2 (en) * 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
CN102084468B (zh) 2008-02-08 2014-10-29 朗姆研究公司 包括横向波纹管和非接触颗粒密封的可调节间隙电容耦合rf等离子反应器
US9048088B2 (en) 2008-03-28 2015-06-02 Lam Research Corporation Processes and solutions for substrate cleaning and electroless deposition
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
CN101783281B (zh) * 2009-01-15 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置及栅极的刻蚀方法
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
JP5416280B2 (ja) 2010-08-19 2014-02-12 株式会社アルバック ドライエッチング方法及び半導体装置の製造方法
JP5845754B2 (ja) * 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
US8974684B2 (en) * 2011-10-28 2015-03-10 Applied Materials, Inc. Synchronous embedded radio frequency pulsing for plasma etching
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US20130129922A1 (en) 2011-11-21 2013-05-23 Qualcomm Mems Technologies, Inc. Batch processing for electromechanical systems and equipment for same
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
US9355839B2 (en) 2012-10-23 2016-05-31 Lam Research Corporation Sub-saturated atomic layer deposition and conformal film deposition
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US20140349469A1 (en) 2013-05-22 2014-11-27 Qualcomm Mems Technologies, Inc. Processing for electromechanical systems and equipment for same
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
US9318304B2 (en) * 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
FR3017241B1 (fr) * 2014-01-31 2017-08-25 Commissariat Energie Atomique Procede de gravure plasma
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9773683B2 (en) * 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
KR101677748B1 (ko) * 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
JP6532066B2 (ja) * 2015-03-30 2019-06-19 東京エレクトロン株式会社 原子層をエッチングする方法
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10056264B2 (en) * 2015-06-05 2018-08-21 Lam Research Corporation Atomic layer etching of GaN and other III-V materials
US20160381060A1 (en) 2015-06-23 2016-12-29 Veracode, Inc. Systems and methods for aggregating asset vulnerabilities
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2017099718A1 (en) 2015-12-08 2017-06-15 Intel Corporation Atomic layer etching of transition metals by halogen surface oxidation
US10727073B2 (en) * 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2017063186A (ja) 2015-08-19 2017-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ タングステンおよび他の金属の原子層エッチング

Also Published As

Publication number Publication date
JP7682948B2 (ja) 2025-05-26
CN111448641B (zh) 2026-05-01
US20240274408A1 (en) 2024-08-15
TWI808998B (zh) 2023-07-21
WO2019070737A1 (en) 2019-04-11
EP3692567A1 (en) 2020-08-12
JP2020536393A (ja) 2020-12-10
TW201923893A (zh) 2019-06-16
US20190108982A1 (en) 2019-04-11
KR20200053623A (ko) 2020-05-18
JP2023113837A (ja) 2023-08-16
EP3692567B1 (en) 2024-08-07
CN111448641A (zh) 2020-07-24
US20200402770A1 (en) 2020-12-24
US10763083B2 (en) 2020-09-01
EP3692567A4 (en) 2021-07-14

Similar Documents

Publication Publication Date Title
JP7682948B2 (ja) 高エネルギー原子層エッチング
KR102757376B1 (ko) Ale (atomic layer etch) 리셋을 사용한 선택적인 증착
KR102652921B1 (ko) GaN 및 다른 III-V 족 재료들의 원자층 에칭
US10515816B2 (en) Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US20230298904A1 (en) Electron excitation atomic layer etch
KR102504770B1 (ko) Ale 및 선택적인 증착을 사용하여 기판들 에칭
US10727073B2 (en) Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
KR20250097770A (ko) 반도체 산업계 안팎에서 ale 평활도
US20170053808A1 (en) Self limiting lateral atomic layer etch
KR20200067213A (ko) Ale 및 선택적 증착을 사용한 금속 옥사이드 기판들 에칭
TW201742143A (zh) 蝕刻方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211001

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211201

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230220

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230509

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230607

R150 Certificate of patent or registration of utility model

Ref document number: 7293211

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250