JP7293211B2 - 高エネルギー原子層エッチング - Google Patents

高エネルギー原子層エッチング Download PDF

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JP7293211B2
JP7293211B2 JP2020519333A JP2020519333A JP7293211B2 JP 7293211 B2 JP7293211 B2 JP 7293211B2 JP 2020519333 A JP2020519333 A JP 2020519333A JP 2020519333 A JP2020519333 A JP 2020519333A JP 7293211 B2 JP7293211 B2 JP 7293211B2
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substrate
bias
plasma
pulsing
power
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JP2020536393A (ja
JP2020536393A5 (enExample
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ヤン・ウェンビン
タン・サマンサ
ムケルジー・タマル
カナリク・ケレン・ジェイコブス
パン・ヤン
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2020519333A 2017-10-06 2018-10-02 高エネルギー原子層エッチング Active JP7293211B2 (ja)

Priority Applications (1)

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JP2023093589A JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

Applications Claiming Priority (7)

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US201762569443P 2017-10-06 2017-10-06
US62/569,443 2017-10-06
US201762599613P 2017-12-15 2017-12-15
US62/599,613 2017-12-15
US16/148,939 US10763083B2 (en) 2017-10-06 2018-10-01 High energy atomic layer etching
US16/148,939 2018-10-01
PCT/US2018/054001 WO2019070737A1 (en) 2017-10-06 2018-10-02 HIGH-ENERGY ATOMIC LAYER ETCHING

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JP2020536393A JP2020536393A (ja) 2020-12-10
JP2020536393A5 JP2020536393A5 (enExample) 2022-01-11
JP7293211B2 true JP7293211B2 (ja) 2023-06-19

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US (3) US10763083B2 (enExample)
EP (1) EP3692567B1 (enExample)
JP (2) JP7293211B2 (enExample)
KR (1) KR20200053623A (enExample)
CN (1) CN111448641A (enExample)
TW (1) TWI808998B (enExample)
WO (1) WO2019070737A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
JP7345382B2 (ja) 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US11518674B2 (en) * 2019-02-04 2022-12-06 Ut-Battelle, Llc Atomic-scale e-beam sculptor
US11270893B2 (en) * 2019-04-08 2022-03-08 International Business Machines Corporation Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures
US11935758B2 (en) 2019-04-29 2024-03-19 Lam Research Corporation Atomic layer etching for subtractive metal etch
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
CN114207858A (zh) * 2019-07-31 2022-03-18 朗姆研究公司 用于mram图案化的化学蚀刻非挥发性材料
US11817295B2 (en) * 2019-08-14 2023-11-14 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層
JP7450455B2 (ja) * 2020-05-13 2024-03-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113808931A (zh) * 2020-06-11 2021-12-17 中国科学院微电子研究所 圆弧形鳍顶形成方法及鳍式场效应晶体管
KR102781895B1 (ko) 2020-07-07 2025-03-18 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
JP7504686B2 (ja) * 2020-07-15 2024-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11823910B2 (en) * 2020-07-31 2023-11-21 Tokyo Electron Limited Systems and methods for improving planarity using selective atomic layer etching (ALE)
KR102821634B1 (ko) * 2020-08-18 2025-06-18 주식회사 원익아이피에스 원자층 식각 방법 및 장치
FR3113769B1 (fr) * 2020-09-03 2023-03-24 Commissariat Energie Atomique Procede de gravure d’une couche de materiau iii-n
CN116034456A (zh) * 2020-09-03 2023-04-28 应用材料公司 选择性各向异性金属蚀刻
KR102797476B1 (ko) 2020-11-13 2025-04-21 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
WO2022169509A1 (en) * 2021-02-03 2022-08-11 Lam Research Corporation Etch selectivity control in atomic layer etching
KR20230085050A (ko) * 2021-12-06 2023-06-13 (주)선재하이테크 진공 챔버용 플렉시블 진공자외선 이오나이저
KR20240163100A (ko) * 2022-03-18 2024-11-18 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20240158954A (ko) * 2022-03-22 2024-11-05 램 리써치 코포레이션 고속 원자층 에칭
KR20240162514A (ko) * 2022-03-22 2024-11-15 램 리써치 코포레이션 탄소 함유층의 높은 에너지 원자층 에칭
JP7462065B2 (ja) * 2022-03-29 2024-04-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
US12009218B2 (en) * 2022-05-06 2024-06-11 Applied Materials, Inc. Pulsed etch process
WO2024049699A1 (en) * 2022-08-31 2024-03-07 Lam Research Corporation Nitride thermal atomic layer etch
KR102797232B1 (ko) * 2022-11-28 2025-04-23 성균관대학교산학협력단 원자층 식각 방법
TW202439443A (zh) * 2023-03-27 2024-10-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
US20250087497A1 (en) * 2023-09-13 2025-03-13 Hitachi High-Tech Corporation Plasma processing method
KR102775721B1 (ko) * 2024-02-15 2025-03-05 오스 주식회사 원자층 식각을 위한 기판 처리 장치
TWI892868B (zh) * 2024-10-17 2025-08-01 態金材料科技股份有限公司 雷射改質並藉金屬玻璃微粒子轟擊之乾式蝕刻法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2017063186A (ja) 2015-08-19 2017-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ タングステンおよび他の金属の原子層エッチング

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798056A (en) 1972-04-05 1974-03-19 Bell Telephone Labor Inc Electroless plating process
JPH03133128A (ja) 1989-10-19 1991-06-06 Res Dev Corp Of Japan ディジタル・エッチング方法
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6527855B2 (en) 2000-10-10 2003-03-04 Rensselaer Polytechnic Institute Atomic layer deposition of cobalt from cobalt metallorganic compounds
JP4152600B2 (ja) * 2001-03-19 2008-09-17 株式会社リコー 微粒子の配列方法
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
CN100355058C (zh) 2001-05-04 2007-12-12 东京毅力科创株式会社 具有连续沉积和蚀刻的电离pvd
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US6664122B1 (en) 2001-10-19 2003-12-16 Novellus Systems, Inc. Electroless copper deposition method for preparing copper seed layers
US7690324B1 (en) 2002-06-28 2010-04-06 Novellus Systems, Inc. Small-volume electroless plating cell
US6841943B2 (en) 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
TWI276802B (en) 2002-08-13 2007-03-21 Lam Res Corp Process endpoint detection method using broadband reflectometry
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US7829152B2 (en) 2006-10-05 2010-11-09 Lam Research Corporation Electroless plating method and apparatus
KR100905278B1 (ko) 2007-07-19 2009-06-29 주식회사 아이피에스 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법
US9059116B2 (en) 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
SG188140A1 (en) 2008-02-08 2013-03-28 Lam Res Corp Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
US9048088B2 (en) 2008-03-28 2015-06-02 Lam Research Corporation Processes and solutions for substrate cleaning and electroless deposition
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
CN101783281B (zh) * 2009-01-15 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置及栅极的刻蚀方法
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
JP5416280B2 (ja) 2010-08-19 2014-02-12 株式会社アルバック ドライエッチング方法及び半導体装置の製造方法
US8969210B2 (en) * 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
US8974684B2 (en) * 2011-10-28 2015-03-10 Applied Materials, Inc. Synchronous embedded radio frequency pulsing for plasma etching
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US20130129922A1 (en) 2011-11-21 2013-05-23 Qualcomm Mems Technologies, Inc. Batch processing for electromechanical systems and equipment for same
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
US9355839B2 (en) 2012-10-23 2016-05-31 Lam Research Corporation Sub-saturated atomic layer deposition and conformal film deposition
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US20140349469A1 (en) 2013-05-22 2014-11-27 Qualcomm Mems Technologies, Inc. Processing for electromechanical systems and equipment for same
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
US9318304B2 (en) * 2013-11-11 2016-04-19 Applied Materials, Inc. Frequency tuning for dual level radio frequency (RF) pulsing
US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
FR3017241B1 (fr) * 2014-01-31 2017-08-25 Commissariat Energie Atomique Procede de gravure plasma
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9773683B2 (en) * 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
KR101677748B1 (ko) * 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
CN107431011B (zh) * 2015-03-30 2021-08-24 东京毅力科创株式会社 用于原子层蚀刻的方法
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
SG10201604524PA (en) * 2015-06-05 2017-01-27 Lam Res Corp ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
US20160381060A1 (en) 2015-06-23 2016-12-29 Veracode, Inc. Systems and methods for aggregating asset vulnerabilities
US9972504B2 (en) * 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2017099718A1 (en) 2015-12-08 2017-06-15 Intel Corporation Atomic layer etching of transition metals by halogen surface oxidation
US10727073B2 (en) * 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2017063186A (ja) 2015-08-19 2017-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ タングステンおよび他の金属の原子層エッチング

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