JP2020536393A5 - - Google Patents

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JP2020536393A5
JP2020536393A5 JP2020519333A JP2020519333A JP2020536393A5 JP 2020536393 A5 JP2020536393 A5 JP 2020536393A5 JP 2020519333 A JP2020519333 A JP 2020519333A JP 2020519333 A JP2020519333 A JP 2020519333A JP 2020536393 A5 JP2020536393 A5 JP 2020536393A5
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memory
machine
energy particles
activation source
further stores
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JP2020536393A (ja
JP7293211B2 (ja
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JP2020519333A 2017-10-06 2018-10-02 高エネルギー原子層エッチング Active JP7293211B2 (ja)

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JP2023093589A JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

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US201762569443P 2017-10-06 2017-10-06
US62/569,443 2017-10-06
US201762599613P 2017-12-15 2017-12-15
US62/599,613 2017-12-15
US16/148,939 2018-10-01
US16/148,939 US10763083B2 (en) 2017-10-06 2018-10-01 High energy atomic layer etching
PCT/US2018/054001 WO2019070737A1 (en) 2017-10-06 2018-10-02 HIGH-ENERGY ATOMIC LAYER ETCHING

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JP2020536393A JP2020536393A (ja) 2020-12-10
JP2020536393A5 true JP2020536393A5 (enExample) 2022-01-11
JP7293211B2 JP7293211B2 (ja) 2023-06-19

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JP2023093589A Active JP7682948B2 (ja) 2017-10-06 2023-06-07 高エネルギー原子層エッチング

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US (3) US10763083B2 (enExample)
EP (1) EP3692567B1 (enExample)
JP (2) JP7293211B2 (enExample)
KR (1) KR20200053623A (enExample)
CN (1) CN111448641A (enExample)
TW (1) TWI808998B (enExample)
WO (1) WO2019070737A1 (enExample)

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