JP7287770B2 - 完全自己整合性ビアを形成するための選択的付着の方法 - Google Patents
完全自己整合性ビアを形成するための選択的付着の方法 Download PDFInfo
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- JP7287770B2 JP7287770B2 JP2018216745A JP2018216745A JP7287770B2 JP 7287770 B2 JP7287770 B2 JP 7287770B2 JP 2018216745 A JP2018216745 A JP 2018216745A JP 2018216745 A JP2018216745 A JP 2018216745A JP 7287770 B2 JP7287770 B2 JP 7287770B2
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| US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
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| WO2019210234A1 (en) * | 2018-04-27 | 2019-10-31 | Tokyo Electron Limited | Area selective deposition for cap layer formation in advanced contacts |
| JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
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| US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
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| US20220136106A1 (en) * | 2020-10-30 | 2022-05-05 | The Board Of Trustees Of The Leland Stanford Junior University | Advanced precursors for selective atomic layer deposition using self-assembled monolayers |
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