JP7235318B2 - 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 - Google Patents

少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 Download PDF

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JP7235318B2
JP7235318B2 JP2019571538A JP2019571538A JP7235318B2 JP 7235318 B2 JP7235318 B2 JP 7235318B2 JP 2019571538 A JP2019571538 A JP 2019571538A JP 2019571538 A JP2019571538 A JP 2019571538A JP 7235318 B2 JP7235318 B2 JP 7235318B2
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silicon carbide
single crystal
carbide single
energy level
concentration
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JP2021502944A (ja
JP2021502944A5 (enExample
Inventor
超 高
家朋 ▲劉▼
加林 李
▲長▼▲進▼ 李
文文 柏
▲艷▼民 宗
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SICC CO., LTD.
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SICC CO., LTD.
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Priority claimed from CN201811204702.6A external-priority patent/CN109280966B/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP2019571538A 2018-10-16 2018-12-26 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 Active JP7235318B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201811204690.7 2018-10-16
CN201811204690.7A CN109280965B (zh) 2018-10-16 2018-10-16 一种掺杂少量钒的高质量半绝缘碳化硅单晶及衬底
CN201811204702.6A CN109280966B (zh) 2018-10-16 2018-10-16 掺杂少量钒的高质量半绝缘碳化硅单晶及衬底的制备方法
CN201811204702.6 2018-10-16
PCT/CN2018/123707 WO2020077846A1 (zh) 2018-10-16 2018-12-26 掺杂少量钒的半绝缘碳化硅单晶、衬底、制备方法

Publications (3)

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JP2021502944A JP2021502944A (ja) 2021-02-04
JP2021502944A5 JP2021502944A5 (enExample) 2021-04-15
JP7235318B2 true JP7235318B2 (ja) 2023-03-08

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JP2019571538A Active JP7235318B2 (ja) 2018-10-16 2018-12-26 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法

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EP (1) EP3666936A4 (enExample)
JP (1) JP7235318B2 (enExample)
KR (1) KR102375530B1 (enExample)
TW (1) TWI703242B (enExample)
WO (1) WO2020077846A1 (enExample)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
CN113151895B (zh) * 2020-06-09 2023-02-03 北京世纪金光半导体有限公司 大直径高纯半绝缘碳化硅生长工艺方法
US20250056856A1 (en) * 2021-12-20 2025-02-13 Sumitomo Electric Industries, Ltd. Silicon carbide substrate, method of manufacturing silicon carbide semiconductor device, and method of manufacturing silicon carbide substrate
CN117585678B (zh) * 2023-11-30 2024-08-27 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
JP2005507360A (ja) 2001-10-29 2005-03-17 オクメティック オーワイジェー 高い抵抗率の炭化ケイ素単結晶
JP2008505833A (ja) 2004-07-07 2008-02-28 トゥー‐シックス・インコーポレイテッド 低ドーピング半絶縁性ＳｉＣ結晶と方法
JP2013173655A (ja) 2012-02-27 2013-09-05 Nagoya Institute Of Technology 半導体結晶材料およびこれを用いた半導体素子
JP2014133701A (ja) 2004-06-25 2014-07-24 Cree Inc １００ミリメートル高純度半絶縁単結晶炭化珪素ウエハ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61219787A (ja) * 1985-03-26 1986-09-30 Kyocera Corp 高純度半導体単結晶製造用ルツボ
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP5068423B2 (ja) * 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
JP5155536B2 (ja) * 2006-07-28 2013-03-06 一般財団法人電力中央研究所 ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法
CN102560672A (zh) * 2010-12-31 2012-07-11 中国科学院物理研究所 半绝缘碳化硅单晶材料
CN102560671B (zh) * 2010-12-31 2015-05-27 中国科学院物理研究所 半绝缘碳化硅单晶

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
JP2005507360A (ja) 2001-10-29 2005-03-17 オクメティック オーワイジェー 高い抵抗率の炭化ケイ素単結晶
JP2014133701A (ja) 2004-06-25 2014-07-24 Cree Inc １００ミリメートル高純度半絶縁単結晶炭化珪素ウエハ
JP2008505833A (ja) 2004-07-07 2008-02-28 トゥー‐シックス・インコーポレイテッド 低ドーピング半絶縁性ＳｉＣ結晶と方法
JP2013173655A (ja) 2012-02-27 2013-09-05 Nagoya Institute Of Technology 半導体結晶材料およびこれを用いた半導体素子

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Publication number Publication date
KR102375530B1 (ko) 2022-03-16
TWI703242B (zh) 2020-09-01
TW202026470A (zh) 2020-07-16
EP3666936A4 (en) 2020-10-28
JP2021502944A (ja) 2021-02-04
EP3666936A1 (en) 2020-06-17
KR20200044728A (ko) 2020-04-29
WO2020077846A1 (zh) 2020-04-23

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