KR102375530B1 - 소량의 바나듐이 도핑된 반절연 탄화규소 단결정, 기판, 제조 방법 - Google Patents

소량의 바나듐이 도핑된 반절연 탄화규소 단결정, 기판, 제조 방법 Download PDF

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KR102375530B1
KR102375530B1 KR1020197037935A KR20197037935A KR102375530B1 KR 102375530 B1 KR102375530 B1 KR 102375530B1 KR 1020197037935 A KR1020197037935 A KR 1020197037935A KR 20197037935 A KR20197037935 A KR 20197037935A KR 102375530 B1 KR102375530 B1 KR 102375530B1
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silicon carbide
single crystal
carbide single
energy level
concentration
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KR20200044728A (ko
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차오 가오
지아펑 리우
지아린 리
창진 리
웬웬 바이
얀민 쫑
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에스아이씨씨 컴퍼니 리미티드
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Priority claimed from CN201811204702.6A external-priority patent/CN109280966B/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
KR1020197037935A 2018-10-16 2018-12-26 소량의 바나듐이 도핑된 반절연 탄화규소 단결정, 기판, 제조 방법 Active KR102375530B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201811204702.6 2018-10-16
CN201811204690.7A CN109280965B (zh) 2018-10-16 2018-10-16 一种掺杂少量钒的高质量半绝缘碳化硅单晶及衬底
CN201811204702.6A CN109280966B (zh) 2018-10-16 2018-10-16 掺杂少量钒的高质量半绝缘碳化硅单晶及衬底的制备方法
CN201811204690.7 2018-10-16
PCT/CN2018/123707 WO2020077846A1 (zh) 2018-10-16 2018-12-26 掺杂少量钒的半绝缘碳化硅单晶、衬底、制备方法

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KR20200044728A KR20200044728A (ko) 2020-04-29
KR102375530B1 true KR102375530B1 (ko) 2022-03-16

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EP (1) EP3666936A4 (enExample)
JP (1) JP7235318B2 (enExample)
KR (1) KR102375530B1 (enExample)
TW (1) TWI703242B (enExample)
WO (1) WO2020077846A1 (enExample)

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CN113151895B (zh) * 2020-06-09 2023-02-03 北京世纪金光半导体有限公司 大直径高纯半绝缘碳化硅生长工艺方法
WO2023119755A1 (ja) * 2021-12-20 2023-06-29 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置の製造方法および炭化珪素基板の製造方法
CN117585678B (zh) * 2023-11-30 2024-08-27 宁波合盛新材料有限公司 一种用于pvt炉合成碳化硅粉新热场的吸氮处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) * 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
JP2008505833A (ja) * 2004-07-07 2008-02-28 トゥー‐シックス・インコーポレイテッド 低ドーピング半絶縁性ＳｉＣ結晶と方法
JP2008053667A (ja) * 2006-07-28 2008-03-06 Central Res Inst Of Electric Power Ind ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子

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JPS61219787A (ja) * 1985-03-26 1986-09-30 Kyocera Corp 高純度半導体単結晶製造用ルツボ
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
SE520968C2 (sv) 2001-10-29 2003-09-16 Okmetic Oyj Högresistiv monokristallin kiselkarbid och metod för dess framställning
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
JP5068423B2 (ja) * 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
CN102560672A (zh) * 2010-12-31 2012-07-11 中国科学院物理研究所 半绝缘碳化硅单晶材料
CN102560671B (zh) * 2010-12-31 2015-05-27 中国科学院物理研究所 半绝缘碳化硅单晶
JP2013173655A (ja) 2012-02-27 2013-09-05 Nagoya Institute Of Technology 半導体結晶材料およびこれを用いた半導体素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) * 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
JP2008505833A (ja) * 2004-07-07 2008-02-28 トゥー‐シックス・インコーポレイテッド 低ドーピング半絶縁性ＳｉＣ結晶と方法
JP2008053667A (ja) * 2006-07-28 2008-03-06 Central Res Inst Of Electric Power Ind ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子

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JP7235318B2 (ja) 2023-03-08
EP3666936A4 (en) 2020-10-28
WO2020077846A1 (zh) 2020-04-23
EP3666936A1 (en) 2020-06-17
TWI703242B (zh) 2020-09-01
TW202026470A (zh) 2020-07-16
JP2021502944A (ja) 2021-02-04
KR20200044728A (ko) 2020-04-29

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