JP7220980B2 - 表示装置製造用のマスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法 - Google Patents
表示装置製造用のマスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法 Download PDFInfo
- Publication number
- JP7220980B2 JP7220980B2 JP2017220801A JP2017220801A JP7220980B2 JP 7220980 B2 JP7220980 B2 JP 7220980B2 JP 2017220801 A JP2017220801 A JP 2017220801A JP 2017220801 A JP2017220801 A JP 2017220801A JP 7220980 B2 JP7220980 B2 JP 7220980B2
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- substrate
- mask blank
- manufacturing
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 372
- 238000004519 manufacturing process Methods 0.000 title claims description 121
- 238000000034 method Methods 0.000 title claims description 71
- 238000005498 polishing Methods 0.000 claims description 148
- 239000010409 thin film Substances 0.000 claims description 65
- 238000007788 roughening Methods 0.000 claims description 47
- 238000004140 cleaning Methods 0.000 claims description 27
- 239000011521 glass Substances 0.000 description 105
- 230000007547 defect Effects 0.000 description 49
- 239000010408 film Substances 0.000 description 49
- 230000010363 phase shift Effects 0.000 description 48
- 230000003746 surface roughness Effects 0.000 description 41
- 230000002093 peripheral effect Effects 0.000 description 37
- 238000010330 laser marking Methods 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 29
- 238000004064 recycling Methods 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 239000011651 chromium Substances 0.000 description 22
- 238000007689 inspection Methods 0.000 description 20
- 235000019592 roughness Nutrition 0.000 description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 18
- 229910052804 chromium Inorganic materials 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 239000003550 marker Substances 0.000 description 18
- 239000006061 abrasive grain Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000003795 chemical substances by application Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000007517 polishing process Methods 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 11
- 229910000420 cerium oxide Inorganic materials 0.000 description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 10
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 10
- 238000005488 sandblasting Methods 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000008119 colloidal silica Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000000049 pigment Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011179 visual inspection Methods 0.000 description 4
- 229910016006 MoSi Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- QBEGYEWDTSUVHH-UHFFFAOYSA-P diazanium;cerium(3+);pentanitrate Chemical compound [NH4+].[NH4+].[Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O QBEGYEWDTSUVHH-UHFFFAOYSA-P 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- -1 molybdenum silicide nitride Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170169612A KR102533073B1 (ko) | 2016-12-22 | 2017-12-11 | 표시 장치 제조용 마스크 블랭크용 기판의 제조 방법, 마스크 블랭크의 제조 방법 및 마스크의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016249328 | 2016-12-22 | ||
JP2016249328 | 2016-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018106147A JP2018106147A (ja) | 2018-07-05 |
JP7220980B2 true JP7220980B2 (ja) | 2023-02-13 |
Family
ID=62787831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017220801A Active JP7220980B2 (ja) | 2016-12-22 | 2017-11-16 | 表示装置製造用のマスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP7220980B2 (ko) |
KR (1) | KR102533073B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6948988B2 (ja) * | 2018-06-26 | 2021-10-13 | クアーズテック株式会社 | フォトマスク用基板およびその製造方法 |
WO2022203364A1 (ko) * | 2021-03-26 | 2022-09-29 | 삼성전자 주식회사 | 피듀셜 마크를 포함하는 하우징을 포함하는 전자 장치 및 그 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012023252A (ja) | 2010-07-15 | 2012-02-02 | Dainippon Printing Co Ltd | 反射型マスクブランクス、反射型マスク、および反射型マスクブランクスの製造方法 |
JP2014084234A (ja) | 2012-10-19 | 2014-05-12 | Hoya Corp | 電子機器用カバーガラスのガラス基板及びその製造方法 |
JP2016069993A (ja) | 2014-09-30 | 2016-05-09 | 大日本印刷株式会社 | 採光具 |
JP6080450B2 (ja) | 2012-09-21 | 2017-02-15 | 株式会社タダノ | 監視カメラ装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5915938A (ja) * | 1982-07-19 | 1984-01-27 | Hoya Corp | マ−キングを施されたフオトマスクブランクス用基板 |
JPS59200238A (ja) * | 1983-04-27 | 1984-11-13 | Fujitsu Ltd | フオトマスクの製造方法 |
JPS6080450U (ja) * | 1983-11-07 | 1985-06-04 | 日本電気株式会社 | フオトマスク基板 |
JPS626259A (ja) * | 1985-07-02 | 1987-01-13 | Sharp Corp | フオトマスク基板 |
JPS6275532A (ja) * | 1985-09-30 | 1987-04-07 | Toshiba Corp | 基板の製造方法 |
JPH04110944A (ja) * | 1990-08-31 | 1992-04-13 | Nippon Sekiei Glass Kk | 透明材料のマーキング方法 |
JPH0571855U (ja) * | 1992-02-28 | 1993-09-28 | 大日本印刷株式会社 | フォトマスク用ガラス基板 |
KR20030053085A (ko) * | 2001-12-22 | 2003-06-28 | 주식회사 실트론 | 실리콘 웨이퍼의 제조방법 |
JP2008151916A (ja) * | 2006-12-15 | 2008-07-03 | Shin Etsu Chem Co Ltd | 大型フォトマスク基板のリサイクル方法 |
JP5176641B2 (ja) * | 2008-03-27 | 2013-04-03 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
JP4839411B2 (ja) * | 2009-02-13 | 2011-12-21 | Hoya株式会社 | マスクブランク用基板、マスクブランクおよびフォトマスク |
CN102472712A (zh) * | 2009-07-24 | 2012-05-23 | 旭硝子株式会社 | 玻璃部件的质量管理方法和质量管理装置以及带标记的玻璃部件 |
JP5578708B2 (ja) * | 2010-04-19 | 2014-08-27 | Hoya株式会社 | Fpd製造用再生フォトマスク基板の製造方法、再生フォトマスク用ブランクの製造方法、ペリクル付再生フォトマスクの製造方法及びパターン転写方法 |
KR20120056905A (ko) * | 2010-08-02 | 2012-06-05 | 주식회사 에스앤에스텍 | 포토마스크 블랭크용 투명 기판, 포토마스크 블랭크 및 그의 제조 방법 |
JP6067529B2 (ja) | 2013-10-09 | 2017-01-25 | 日本板硝子株式会社 | マーク付きコーティングガラス板の製造方法 |
JP2015119087A (ja) | 2013-12-19 | 2015-06-25 | 古河機械金属株式会社 | マーク付き窒化物半導体基板の製造方法 |
JP2018076207A (ja) * | 2016-11-10 | 2018-05-17 | 旭硝子株式会社 | ガラス板およびガラス板の製造方法 |
-
2017
- 2017-11-16 JP JP2017220801A patent/JP7220980B2/ja active Active
- 2017-12-11 KR KR1020170169612A patent/KR102533073B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012023252A (ja) | 2010-07-15 | 2012-02-02 | Dainippon Printing Co Ltd | 反射型マスクブランクス、反射型マスク、および反射型マスクブランクスの製造方法 |
JP6080450B2 (ja) | 2012-09-21 | 2017-02-15 | 株式会社タダノ | 監視カメラ装置 |
JP2014084234A (ja) | 2012-10-19 | 2014-05-12 | Hoya Corp | 電子機器用カバーガラスのガラス基板及びその製造方法 |
JP2016069993A (ja) | 2014-09-30 | 2016-05-09 | 大日本印刷株式会社 | 採光具 |
Also Published As
Publication number | Publication date |
---|---|
KR20180073451A (ko) | 2018-07-02 |
JP2018106147A (ja) | 2018-07-05 |
KR102533073B1 (ko) | 2023-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6420383B2 (ja) | マスクブランク用ガラス基板、多層反射膜付き基板、マスクブランク及びマスク | |
US10295900B2 (en) | Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method | |
US10620527B2 (en) | Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method | |
US8039178B2 (en) | Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks | |
JP6216835B2 (ja) | マスクブランク用基板、マスクブランク、反射型マスクブランク、転写マスク、及び反射型マスク、並びにそれらの製造方法 | |
WO2004008247A1 (ja) | マスクブランクス用ガラス基板、及びその製造方法 | |
JP2010085867A (ja) | マスクブランク用基板セットおよびマスクブランクセット | |
WO2015145887A1 (ja) | マスクブランク用基板、マスクブランク及び転写用マスク、並びにそれらの製造方法 | |
CN106933026A (zh) | 光掩模和光掩模基板及其制造方法、光掩模坯体、显示装置制造方法 | |
JP7220980B2 (ja) | 表示装置製造用のマスクブランク用基板の製造方法、マスクブランクの製造方法、及びマスクの製造方法 | |
JP3764734B2 (ja) | マスクブランクスの製造方法 | |
JP2006146250A (ja) | マスクブランクス用ガラス基板、及び転写マスク | |
JP6618843B2 (ja) | フォトマスク用基板のリサイクル方法、フォトマスク用基板の製造方法、フォトマスクブランクの製造方法、フォトマスクの製造方法、及びパターン転写方法 | |
JP2004302280A (ja) | マスクブランクス用基板の製造方法、及びマスクブランクスの製造方法、並びに転写マスクの製造方法 | |
JP2017111371A (ja) | マスクブランク用基板の製造方法、マスクブランクの製造方法及び露光用マスクの製造方法 | |
JP2014002395A (ja) | マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171122 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200902 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210623 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210727 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210924 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211130 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220309 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220802 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221031 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20221031 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20221115 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20221122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230201 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7220980 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |