JP7210446B2 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP7210446B2
JP7210446B2 JP2019528107A JP2019528107A JP7210446B2 JP 7210446 B2 JP7210446 B2 JP 7210446B2 JP 2019528107 A JP2019528107 A JP 2019528107A JP 2019528107 A JP2019528107 A JP 2019528107A JP 7210446 B2 JP7210446 B2 JP 7210446B2
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power semiconductor
power
semiconductor module
base plate
devices
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Japanese (ja)
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JP2020501353A5 (enExample
JP2020501353A (ja
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ハルトマン，サミュエル
トリューセル，ドミニク
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)
JP2019528107A 2016-11-25 2017-11-27 パワー半導体モジュール Active JP7210446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16200714.0 2016-11-25
EP16200714 2016-11-25
PCT/EP2017/080529 WO2018096147A1 (en) 2016-11-25 2017-11-27 Power semiconductor module

Publications (3)

Publication Number Publication Date
JP2020501353A JP2020501353A (ja) 2020-01-16
JP2020501353A5 JP2020501353A5 (enExample) 2020-12-03
JP7210446B2 true JP7210446B2 (ja) 2023-01-23

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JP2019528107A Active JP7210446B2 (ja) 2016-11-25 2017-11-27 パワー半導体モジュール

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US (1) US11127671B2 (enExample)
EP (1) EP3545552B1 (enExample)
JP (1) JP7210446B2 (enExample)
CN (1) CN109997223B (enExample)
WO (1) WO2018096147A1 (enExample)

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FR3088138B1 (fr) * 2018-11-07 2022-01-21 Inst Vedecom Module electronique de puissance
EP3772750A1 (en) * 2019-08-07 2021-02-10 Infineon Technologies AG Semiconductor module arrangement
US11569815B1 (en) * 2019-10-15 2023-01-31 Zhong Chen High electric-thermal performance and high-power density power module
EP3859774B1 (en) * 2020-01-29 2022-05-04 Hitachi Energy Switzerland AG Power semiconductor module
CN111682021B (zh) * 2020-06-17 2024-06-04 上海临港电力电子研究有限公司 功率半导体模块衬底及其所应用的功率半导体设备
CN112635407A (zh) * 2020-11-06 2021-04-09 赛晶亚太半导体科技(浙江)有限公司 一种igbt芯片排布结构
EP4095900B1 (en) 2021-05-28 2024-01-31 Hitachi Energy Ltd Clamping element and method for producing a power semiconductor device
CN113834527B (zh) * 2021-09-18 2024-09-27 重庆大学 一种压接型功率半导体结构及其内部压力在线测量方法
DE102022205514A1 (de) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Halbbrückenmodul mit parallel geführten Versorgungs-Zuleitungen verbunden mit isolierten Anschlussflächen zwischen zwei Streifenabschnitten sowie mit einem der Streifenabschnitte einer Leiterbahnschicht
CN117423672B (zh) * 2023-10-08 2025-04-01 西安电子科技大学 一种均流的碳化硅功率模块

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JP2013012560A (ja) 2011-06-29 2013-01-17 Hitachi Ltd パワー半導体モジュール
JP2013021107A (ja) 2011-07-11 2013-01-31 Hitachi Ltd 半導体パワーモジュール
WO2016084622A1 (ja) 2014-11-28 2016-06-02 富士電機株式会社 半導体装置

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