CN109997223B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

Info

Publication number
CN109997223B
CN109997223B CN201780073003.XA CN201780073003A CN109997223B CN 109997223 B CN109997223 B CN 109997223B CN 201780073003 A CN201780073003 A CN 201780073003A CN 109997223 B CN109997223 B CN 109997223B
Authority
CN
China
Prior art keywords
power semiconductor
substrate
power
device region
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780073003.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN109997223A (zh
Inventor
S.哈特曼
D.特吕塞尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
Hitachi Energy Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Switzerland AG filed Critical Hitachi Energy Switzerland AG
Publication of CN109997223A publication Critical patent/CN109997223A/zh
Application granted granted Critical
Publication of CN109997223B publication Critical patent/CN109997223B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
    • H01L25/115—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1425—Converter
    • H01L2924/14252—Voltage converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)
CN201780073003.XA 2016-11-25 2017-11-27 功率半导体模块 Active CN109997223B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16200714.0 2016-11-25
EP16200714 2016-11-25
PCT/EP2017/080529 WO2018096147A1 (en) 2016-11-25 2017-11-27 Power semiconductor module

Publications (2)

Publication Number Publication Date
CN109997223A CN109997223A (zh) 2019-07-09
CN109997223B true CN109997223B (zh) 2023-06-30

Family

ID=57406127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780073003.XA Active CN109997223B (zh) 2016-11-25 2017-11-27 功率半导体模块

Country Status (5)

Country Link
US (1) US11127671B2 (enExample)
EP (1) EP3545552B1 (enExample)
JP (1) JP7210446B2 (enExample)
CN (1) CN109997223B (enExample)
WO (1) WO2018096147A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109216339A (zh) * 2018-10-31 2019-01-15 广东美的制冷设备有限公司 高集成功率模块和电器
FR3088138B1 (fr) * 2018-11-07 2022-01-21 Inst Vedecom Module electronique de puissance
EP3772750A1 (en) * 2019-08-07 2021-02-10 Infineon Technologies AG Semiconductor module arrangement
US11569815B1 (en) * 2019-10-15 2023-01-31 Zhong Chen High electric-thermal performance and high-power density power module
EP3859774B1 (en) * 2020-01-29 2022-05-04 Hitachi Energy Switzerland AG Power semiconductor module
CN111682021B (zh) * 2020-06-17 2024-06-04 上海临港电力电子研究有限公司 功率半导体模块衬底及其所应用的功率半导体设备
CN112635407A (zh) * 2020-11-06 2021-04-09 赛晶亚太半导体科技(浙江)有限公司 一种igbt芯片排布结构
EP4095900B1 (en) 2021-05-28 2024-01-31 Hitachi Energy Ltd Clamping element and method for producing a power semiconductor device
CN113834527B (zh) * 2021-09-18 2024-09-27 重庆大学 一种压接型功率半导体结构及其内部压力在线测量方法
DE102022205514A1 (de) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Halbbrückenmodul mit parallel geführten Versorgungs-Zuleitungen verbunden mit isolierten Anschlussflächen zwischen zwei Streifenabschnitten sowie mit einem der Streifenabschnitte einer Leiterbahnschicht
CN117423672B (zh) * 2023-10-08 2025-04-01 西安电子科技大学 一种均流的碳化硅功率模块

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102110680A (zh) * 2009-10-30 2011-06-29 通用电气公司 具有降低电感的功率模块组件

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
US6054765A (en) * 1998-04-27 2000-04-25 Delco Electronics Corporation Parallel dual switch module
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US7505294B2 (en) * 2003-05-16 2009-03-17 Continental Automotive Systems Us, Inc. Tri-level inverter
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
JP4513770B2 (ja) 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
JP5637944B2 (ja) 2011-06-29 2014-12-10 株式会社 日立パワーデバイス パワー半導体モジュール
JP5555206B2 (ja) 2011-07-11 2014-07-23 株式会社 日立パワーデバイス 半導体パワーモジュール
US8675379B2 (en) * 2011-08-08 2014-03-18 General Electric Company Power converting apparatus having improved electro-thermal characteristics
IL228896A (en) * 2012-10-15 2017-01-31 Wix Com Ltd System for deep linking and search engine support for web sites integrating third party application and components
KR101890752B1 (ko) * 2012-11-01 2018-08-22 삼성전자 주식회사 균일한 병렬 스위치 특성을 갖는 파워모듈용 기판 및 이를 포함하는 파워모듈
KR102034717B1 (ko) * 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
DE112015002272B4 (de) 2014-05-15 2024-07-25 Wolfspeed, Inc. Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten
WO2015176985A1 (en) * 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
CN106415834B (zh) 2014-11-28 2019-09-13 富士电机株式会社 半导体装置
WO2016188909A1 (en) * 2015-05-22 2016-12-01 Abb Schweiz Ag Power semiconductor module
US10277112B2 (en) * 2015-06-23 2019-04-30 Tm4, Inc. Physical topology for a power converter
US10749443B2 (en) * 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
JP7162013B2 (ja) * 2017-05-02 2022-10-27 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト Ｄｃ端子の同軸配列を有するハーフブリッジモジュール

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102110680A (zh) * 2009-10-30 2011-06-29 通用电气公司 具有降低电感的功率模块组件

Also Published As

Publication number Publication date
US11127671B2 (en) 2021-09-21
EP3545552A1 (en) 2019-10-02
JP7210446B2 (ja) 2023-01-23
WO2018096147A1 (en) 2018-05-31
JP2020501353A (ja) 2020-01-16
EP3545552B1 (en) 2024-10-30
US20190279927A1 (en) 2019-09-12
CN109997223A (zh) 2019-07-09

Similar Documents

Publication Publication Date Title
CN109997223B (zh) 功率半导体模块
US20250219025A1 (en) Semiconductor power module
US8461623B2 (en) Power semiconductor module
US12094793B2 (en) Package with electrically insulated carrier and at least one step on encapsulant
JP7428017B2 (ja) 半導体モジュール
CN109473415B (zh) 具有顶侧冷却部的smd封装
CN100397769C (zh) 小电感的电路结构
US20230052830A1 (en) Power circuit module
US10916531B2 (en) Semiconductor module
US10410996B2 (en) Integrated circuit package for assembling various dice in a single IC package
CN114300435A (zh) 半导体模块
CN114446916A (zh) 三层级互连夹
US20230317685A1 (en) Packaged electronic device comprising a plurality of power transistors
JP7574134B2 (ja) 半導体装置
CN111613608A (zh) 用于多芯片功率半导体器件的封装
US12347754B2 (en) Package with load terminals on which coupled power component and logic component are mounted
TWI905935B (zh) 半導體模組
US20240038750A1 (en) Semiconductor module
EP4113605A1 (en) Power semiconductor module arrangement
CN115411008A (zh) 开关装置、半导体装置及开关装置的制造方法
CN120015725A (zh) 封装电子设备及其制造过程
CN118448411A (zh) 半导体模块
CN116325151A (zh) 电接触装置、功率半导体模块、用于制造电接触装置的方法和用于制造功率半导体模块的方法
JPWO2018096734A1 (ja) 半導体モジュール

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20200509

Address after: Baden, Switzerland

Applicant after: ABB grid Switzerland AG

Address before: Baden, Switzerland

Applicant before: ABB Switzerland Co.,Ltd.

TA01 Transfer of patent application right
CB02 Change of applicant information

Address after: Swiss Baden

Applicant after: Hitachi energy Switzerland AG

Address before: Swiss Baden

Applicant before: ABB grid Switzerland AG

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20240103

Address after: Zurich, SUI

Patentee after: Hitachi Energy Co.,Ltd.

Address before: Swiss Baden

Patentee before: Hitachi energy Switzerland AG

TR01 Transfer of patent right