JP2020501353A5 - - Google Patents

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Publication number
JP2020501353A5
JP2020501353A5 JP2019528107A JP2019528107A JP2020501353A5 JP 2020501353 A5 JP2020501353 A5 JP 2020501353A5 JP 2019528107 A JP2019528107 A JP 2019528107A JP 2019528107 A JP2019528107 A JP 2019528107A JP 2020501353 A5 JP2020501353 A5 JP 2020501353A5
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JP
Japan
Prior art keywords
power semiconductor
region
semiconductor module
base plate
power
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JP2019528107A
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English (en)
Japanese (ja)
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JP7210446B2 (ja
JP2020501353A (ja
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Priority claimed from PCT/EP2017/080529 external-priority patent/WO2018096147A1/en
Publication of JP2020501353A publication Critical patent/JP2020501353A/ja
Publication of JP2020501353A5 publication Critical patent/JP2020501353A5/ja
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JP2019528107A 2016-11-25 2017-11-27 パワー半導体モジュール Active JP7210446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16200714.0 2016-11-25
EP16200714 2016-11-25
PCT/EP2017/080529 WO2018096147A1 (en) 2016-11-25 2017-11-27 Power semiconductor module

Publications (3)

Publication Number Publication Date
JP2020501353A JP2020501353A (ja) 2020-01-16
JP2020501353A5 true JP2020501353A5 (enExample) 2020-12-03
JP7210446B2 JP7210446B2 (ja) 2023-01-23

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ID=57406127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019528107A Active JP7210446B2 (ja) 2016-11-25 2017-11-27 パワー半導体モジュール

Country Status (5)

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US (1) US11127671B2 (enExample)
EP (1) EP3545552B1 (enExample)
JP (1) JP7210446B2 (enExample)
CN (1) CN109997223B (enExample)
WO (1) WO2018096147A1 (enExample)

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FR3088138B1 (fr) * 2018-11-07 2022-01-21 Inst Vedecom Module electronique de puissance
EP3772750A1 (en) * 2019-08-07 2021-02-10 Infineon Technologies AG Semiconductor module arrangement
US11569815B1 (en) * 2019-10-15 2023-01-31 Zhong Chen High electric-thermal performance and high-power density power module
EP3859774B1 (en) * 2020-01-29 2022-05-04 Hitachi Energy Switzerland AG Power semiconductor module
CN111682021B (zh) * 2020-06-17 2024-06-04 上海临港电力电子研究有限公司 功率半导体模块衬底及其所应用的功率半导体设备
CN112635407A (zh) * 2020-11-06 2021-04-09 赛晶亚太半导体科技(浙江)有限公司 一种igbt芯片排布结构
EP4095900B1 (en) 2021-05-28 2024-01-31 Hitachi Energy Ltd Clamping element and method for producing a power semiconductor device
CN113834527B (zh) * 2021-09-18 2024-09-27 重庆大学 一种压接型功率半导体结构及其内部压力在线测量方法
DE102022205514A1 (de) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Halbbrückenmodul mit parallel geführten Versorgungs-Zuleitungen verbunden mit isolierten Anschlussflächen zwischen zwei Streifenabschnitten sowie mit einem der Streifenabschnitte einer Leiterbahnschicht
CN117423672B (zh) * 2023-10-08 2025-04-01 西安电子科技大学 一种均流的碳化硅功率模块

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JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
US6054765A (en) * 1998-04-27 2000-04-25 Delco Electronics Corporation Parallel dual switch module
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US7505294B2 (en) * 2003-05-16 2009-03-17 Continental Automotive Systems Us, Inc. Tri-level inverter
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
EP1908049A2 (en) * 2005-06-24 2008-04-09 International Rectifier Corporation Semiconductor half-bridge module with low inductance
JP4513770B2 (ja) 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
US8076696B2 (en) 2009-10-30 2011-12-13 General Electric Company Power module assembly with reduced inductance
JP5637944B2 (ja) 2011-06-29 2014-12-10 株式会社 日立パワーデバイス パワー半導体モジュール
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