CN107492531A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN107492531A
CN107492531A CN201710433694.1A CN201710433694A CN107492531A CN 107492531 A CN107492531 A CN 107492531A CN 201710433694 A CN201710433694 A CN 201710433694A CN 107492531 A CN107492531 A CN 107492531A
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terminal
semiconductor device
switch element
low
terminals
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CN107492531B (zh
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中村宏之
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Mitsubishi Electric Corp
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Abstract

本发明的目的是提供一种能够使安装时的配线简化的半导体装置。半导体装置(1)是半桥结构的半导体装置。半导体装置(1)具备P端子(21)、N端子(22)、功率输出端子(23)、电源端子(25)、GND端子(26)、控制端子(24)、俯视观察时呈矩形形状的封装件(20)，该封装件(20)收容IGBT(2、3)及控制电路(4)。控制端子(24)配置在封装件(20)的与配置有功率输出端子(23)的边相对的边，P端子(21)、N端子(22)、电源端子(25)及GND端子(26)配置在封装件(20)的与配置有功率输出端子(23)的边正交的边。

Description

半导体装置
技术领域
本发明涉及电力用半导体装置。
背景技术
当前，DIPIPM(Dual Inline Package Intelligent Power Model)具备3相全桥的IGBT(Insulated Gate Bipolar Transistor)、FWD(Free Wheeling Diode)及控制电路。在主电流的流通所使用的端子，即，作为主端子的输入侧P端子及N端子之间配置有输出端子(U，V，W)。另外，控制电路的电源端子存在多个。在逆变器基板处，三相交流电源经由二极管电桥和平滑电容器与DIPIPM的P端子及N端子连接，控制电路的电源是经由变压器等而另外进行供给的。DIPIPM搭载有短路保护功能，通过由控制电路对向与N端子连接的分流电阻施加的电压值进行检测，从而能够实现IGBT的保护。
在现有的技术中，主端子及控制端子配置在封装件的彼此相对的边，因此，在主端子侧，与P端子连接的配线、经由分流电阻与N端子连接的配线、以及输出配线相交叉，另外，在控制侧，电源配线和GND配线相交叉。并且，在控制电路中，在短路保护检测用端子连接来自N端子的配线，这样，配线从主端子侧到达至控制侧，因此，配线变得复杂。因此，如果模块的电流容量变高，则难以确保基板上的配线图案的截面积，需要多层基板或跳线等配线材料。
例如，在专利文献1中公开了搭载有功率半导体设备的模块。在该模块处，输出引线及针引线配置在成型体的彼此相对的边，功率输入引线(相当于P端子)及接地引线(相当于N端子)配置在成型体的与配置有输出引线的边正交的边。因此，能够抑制与P端子连接的配线、与N端子连接的配线及输出配线相交叉。
专利文献1：日本特表2007-502544号公报
但是，专利文献1记载的模块不具备控制电路，在专利文献1中没有公开控制侧的电源端子和GND端子的位置关系。因此，即使现有的DIPIPM采用专利文献1所记载的技术，也无法消除在控制侧电源配线和GND配线相交叉的问题，难以使安装时的配线简化。
发明内容
因此，本发明的目的是提供一种能够使安装时的配线简化的半导体装置。
本发明涉及的半导体装置是半桥结构的半导体装置，该半导体装置具备：P端子，其与半桥的高压端连接；N端子，其与半桥的低压端连接；功率输出端子，其连接于半桥的高压侧开关元件和低压侧开关元件的连接点；电源端子及GND端子，其与对所述高压侧开关元件及所述低压侧开关元件进行控制的控制电路连接；控制端子，其用于经由所述控制电路而对所述高压侧开关元件及所述低压侧开关元件进行控制；以及俯视观察时呈矩形形状的封装件，其对所述高压侧开关元件、所述低压侧开关元件及所述控制电路进行收容，所述控制端子配置在所述封装件的与配置有所述功率输出端子的边相对的边，所述P端子、所述N端子、所述电源端子及所述GND端子配置在所述封装件的与配置有所述功率输出端子的边正交的边。
发明的效果
根据本发明，控制端子配置在封装件的与配置有功率输出端子的边相对的边，因此，能够抑制与控制端子连接的配线及与功率输出端子连接的配线相交叉。另外，P端子、N端子、电源端子及GND端子配置在封装件的与配置有功率输出端子的边正交的边，因此，在设为全桥结构的情况下，能够将多个的半导体装置彼此在配置有P端子、N端子、电源端子及GND端子的边相邻地连接。由此，能够将与P端子、N端子、电源端子及GND端子连接的配线的一部分收入封装件的内部。根据以上结构，能够将安装时的配线简化。
附图说明
图1是实施方式1涉及的半导体装置的透视俯视图。
图2是图1的A-A线剖面图。
图3是实施方式1涉及的半导体装置的电路图。
图4是表示实施方式1涉及的半导体装置的3相逆变器结构例的电路图。
图5是实施方式2涉及的半导体装置的剖面图。
图6是实施方式3涉及的半导体装置的透视俯视图。
图7是图6的B-B线剖面图。
图8是表示前提技术涉及的半导体装置的3相逆变器结构例的电路图。
标号的说明
1半导体装置，2、3IGBT，4控制电路，7、8引线框架，20封装件，21P端子，22N端子，23功率输出端子，24控制端子，25电源端子，26GND端子，50绝缘材料，51金属板，57、58基板。
具体实施方式
<实施方式1>
下面，使用附图对本发明的实施方式1进行说明。图1是实施方式1涉及的半导体装置1的透视俯视图。图2是图1的A-A线剖面图。图3是半导体装置1的电路图。
如图1和图2所示，半导体装置1是传递模塑型的功率模块。半导体装置1具备：作为高压侧开关元件的IGBT 2、作为低压侧开关元件的IGBT 3、控制电路4、FWD 5、6、引线框架7～13、P端子21、N端子22、功率输出端子23、控制端子24、电源端子25、GND端子26以及封装件20。
引线框架7～13是将金属制的薄板加工成配线状而得到的。IGBT 2搭载在作为第1引线框架的引线框架7的上表面。IGBT 3搭载在作为第2引线框架的引线框架8的上表面，经由内部配线与IGBT2串联连接。控制电路4搭载在引线框架12的上表面。另外，控制电路4经由内部配线与IGBT 2及IGBT 3的栅极连接，对IGBT 2及IGBT 3的通断动作进行控制。并且，控制电路4经由内部配线与N端子22连接，基于来自N端子22的输入，对IGBT 2及IGBT 3的过电流进行检测而进行短路保护。
如图1、图2及图3所示，P端子21形成在引线框架7及引线框架9的一端部，经由内部配线与作为半桥的高压端的、IGBT 2的集电极连接。N端子22形成在引线框架10的两端部，经由内部配线与作为低压端的IGBT 3的发射极连接。功率输出端子23形成在引线框架8的一端部，经由内部配线而连接于IGBT 2和IGBT 3的连接点，更具体地说，连接于IGBT 2的发射极和IGBT 3的集电极的连接点。
FWD 5搭载在引线框架7的上表面。FWD 5连接在IGBT 2的集电极－发射极之间，将发射极侧作为阳极，在IGBT 2的截止时流过回流电流。FWD 6搭载在引线框架8的上表面。FWD 6连接在IGBT3的集电极－发射极之间，将发射极侧作为阳极，在IGBT 3的截止时流过回流电流。
控制端子24是用于经由控制电路4对IGBT 2及IGBT 3进行控制的端子。另外，控制端子24形成在引线框架13的一端部，经由内部配线与控制电路4连接。半导体装置1具备6个控制端子24，在其中两个控制端子24之间连接有BSD(Bootstrap Diode)27和电阻28。电源端子25形成在引线框架11的两端部，经由内部配线与控制电路4连接。GND端子26形成在引线框架12的两端部，经由内部配线与控制电路4连接。
封装件20由模塑树脂形成为俯视观察时呈矩形形状。另外，封装件20将IGBT 2、3、控制电路4、FWD 5、6及引线框架7～13的除了端子部分以外的部分封装、收容。
接下来，使用图1，对半导体装置1的各端子的配置关系进行说明。功率输出端子23在图1中配置于封装件20的下侧的边。控制端子24在图1中配置于封装件20的上侧的边，即，配置在封装件20的与配置有功率输出端子23的边相对的边。P端子21、N端子22、电源端子25及GND端子26在图1中配置于封装件20的左侧及右侧的边，即，配置在封装件20的与配置有功率输出端子23的边正交的边。此外，P端子21、N端子22及功率输出端子23是主端子。
接下来，对半导体装置1的3相逆变器结构例进行说明。图4是表示半导体装置1的3相逆变器结构例的电路图。
如图4所示，设想下述情况，即，由于半导体装置1是半桥结构，所以为了使其成为全桥结构而将3个半导体装置1并排，将相邻的半导体装置1的P端子21之间、N端子22之间、电源端子25之间及GND端子26之间分别连接而进行使用。3相交流电源40经由二极管电桥41和平滑电容器42而与P端子21连接。另外，3相交流电源40经由二极管电桥41、平滑电容器42及分流电阻44而与N端子22连接。在3相逆变器工作时，在P端子21－N端子22之间，从3相交流电源40经由二极管电桥41和平滑电容器42而施加DC电源电压。直流电源43与电源端子25连接，电动机45与功率输出端子23连接。
此外，图4是3相的例子，但在2相的情况下，只要将2个半桥结构的半导体装置1连接即可。另外，在构成通过单一的电源来工作的多个逆变器的情况下，也只要在图4的结构中追加必要个数的半桥结构的半导体装置1即可。
接下来，与前提技术的情况进行比较，对根据实施方式1涉及的半导体装置1得到的效果进行说明。图8是表示前提技术涉及的半导体装置的3相逆变器结构例的电路图。
首先，对由前提技术涉及的半导体装置构成的3相逆变器100进行说明。如图8所示，3相逆变器100的主端子及控制端子配置在封装件101的彼此相对的边，因此，在主端子侧，与P端子连接的配线、经由分流电阻与N端子连接的配线以及输出配线相交叉，另外，在控制侧，电源配线和GND配线相交叉。并且，在控制电路中，在短路保护检测用端子连接来自N端子的配线，这样，配线从主端子侧到达至控制侧，因此配线变得复杂。因此，如果3相逆变器100的电流容量变高，则难以确保基板上的配线图案的截面积，需要多层基板或跳线等配线材料。
与此相对，如图4所示，就实施方式1涉及的半导体装置1而言，控制端子24配置在封装件20的与配置有功率输出端子23的边相对的边，因此，能够抑制与控制端子24连接的配线及与功率输出端子23连接的配线相交叉。另外，P端子21、N端子22、电源端子25及GND端子26配置在封装件20的与配置有功率输出端子23的边正交的边，因此，在设为全桥结构的情况下，能够将多个的半导体装置1彼此在配置有P端子21、N端子22、电源端子25及GND端子26的边相邻地连接。由此，能够将与P端子21、N端子22、电源端子25及GND端子26连接的配线的一部分收入封装件20的内部。根据以上结构，能够将安装时的配线简化，因此，能够有效运用基板面积。
控制电路4经由内部配线与N端子22连接，且，基于来自N端子22的输入，对IGBT 2及IGBT 3的过电流进行检测而进行短路保护，因此，即使在将多个半导体装置1连接而构成多相逆变器的情况下，也能够进行与多相对应的短路保护。
另外，在前提技术中，如上所述，经由外部配线而将N端子和控制电路的短路保护检测用端子连接，因此，配线从主端子侧到达至控制侧，配线变得复杂。控制电路4经由内部配线与N端子22连接，因此，不需要用于将N端子22和短路保护检测用端子连接的外部配线，能够将安装时的配线简化。
另外，P端子21、N端子22、电源端子25及GND端子26配置于封装件20的相同的边，因此，能够抑制从3相交流电源40与P端子21、N端子22、电源端子25及GND端子26连接的配线相交叉。
<实施方式2>
接下来，对实施方式2涉及的半导体装置1A进行说明。图5是实施方式2涉及的半导体装置1A的剖面图，是与实施方式2的图2相当的图。此外，在实施方式2中，对于与实施方式1中已说明过的结构要素相同的结构要素，标注相同的标号并省略说明。
如图5所示，半导体装置1A还具备：绝缘材料50，其配置在引线框架7及引线框架8的下表面；以及金属板51，其配置在绝缘材料50的下表面。优选绝缘材料50使用掺入了陶瓷填料的树脂而形成。另外，优选金属板51使用铝或铜等散热性高的金属而形成。
如上所述，实施方式2涉及的半导体装置1A还具有：引线框架7，其搭载IGBT 2且包含有P端子21；引线框架8，其搭载IGBT 3且包含有功率输出端子23；绝缘材料50，其配置在引线框架7及引线框架8的下表面；以及金属板51，其配置在绝缘材料50的下表面。因此，与实施方式1的情况相比，提高了从IGBT 2及IGBT 3至散热面的热传导，散热路径的厚度稳定。
<实施方式3>
接下来，对实施方式3涉及的半导体装置1B进行说明。图6是实施方式3涉及的半导体装置1B的透视俯视图，图7是图6的B-B线剖面图。此外，在实施方式3中，对于与实施方式1、2中已说明过的结构要素相同的结构要素，标注相同的标号并省略说明。
如图6及图7所示，实施方式3涉及的半导体装置1B构成为，取代引线框架7及引线框架8而具备：作为第1绝缘基板的基板57，其搭载有IGBT 2；以及作为第2绝缘基板的基板58，其搭载有IGBT3。基板57及基板58是通过下述方式制作的，即，在陶瓷等绝缘材料上，在搭载IGBT 2及IGBT 3的部分，通过蚀刻等对金属的配线图案(相当于金属图案)进行图案化。
此外，在图6和图7中，分别将IGBT 2及FWD 5搭载在基板57上，将IGBT 3及FWD 6搭载在基板58上，但控制电路4也可以搭载在基板57或基板58上。
如上所述，实施方式3涉及的半导体装置1B还具备：作为第1绝缘基板的基板57，其搭载IGBT 2且在搭载有IGBT 2的部分具有金属制的配线图案；以及作为第2绝缘基板的基板58，其搭载IGBT3且在搭载有IGBT 3的部分具有金属制的配线图案。在实施方式2的情况下，考虑到与引线框架7及引线框架8的粘结性而将绝缘材料50使用树脂形成，与此相对，在实施方式3的情况下，基板57及基板58是通过在陶瓷等绝缘材料上对金属的配线图案进行图案化而制作的，因此，与绝缘材料50相比，基板57及基板58的散热性提高。因此，与实施方式2的情况相比散热性提高。
此外，本发明能够在该发明的范围内，将各实施方式自由地组合，或对各实施方式适当地进行变形、省略。

Claims (4)

1.一种半导体装置，其是半桥结构的半导体装置，
该半导体装置具备：
P端子，其与半桥的高压端连接；
N端子，其与半桥的低压端连接；
功率输出端子，其连接于半桥的高压侧开关元件和低压侧开关元件的连接点；
电源端子及GND端子，其与对所述高压侧开关元件及所述低压侧开关元件进行控制的控制电路连接；
控制端子，其用于经由所述控制电路而对所述高压侧开关元件及所述低压侧开关元件进行控制；以及
俯视观察时呈矩形形状的封装件，其对所述高压侧开关元件、所述低压侧开关元件及所述控制电路进行收容，
所述控制端子配置在所述封装件的与配置有所述功率输出端子的边相对的边，
所述P端子、所述N端子、所述电源端子及所述GND端子配置在所述封装件的与配置有所述功率输出端子的边正交的边。
2.根据权利要求1所述的半导体装置，
所述控制电路经由内部配线与所述N端子连接，且基于来自所述N端子的输入对所述高压侧开关元件及所述低压侧开关元件的过电流进行检测而进行短路保护。
3.根据权利要求1或2所述的半导体装置，还具备：
第1引线框架，其搭载所述高压侧开关元件且包含有所述P端子；
第2引线框架，其搭载所述低压侧开关元件且包含有所述功率输出端子；
绝缘材料，其配置在所述第1引线框架及所述第2引线框架的下表面；以及
金属板，其配置在所述绝缘材料的下表面。
4.根据权利要求1或2所述的半导体装置，还具备：
第1绝缘基板，其搭载所述高压侧开关元件且在搭载有所述高压侧开关元件的部分具有金属图案；以及
第2绝缘基板，其搭载所述低压侧开关元件且在搭载有所述低压侧开关元件的部分具有金属图案。
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