JP7209331B2 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP7209331B2
JP7209331B2 JP2018157500A JP2018157500A JP7209331B2 JP 7209331 B2 JP7209331 B2 JP 7209331B2 JP 2018157500 A JP2018157500 A JP 2018157500A JP 2018157500 A JP2018157500 A JP 2018157500A JP 7209331 B2 JP7209331 B2 JP 7209331B2
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electrode
cover electrode
layer
insulating layer
semiconductor device
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JP2019041109A (ja
Inventor
ソン，ヨンチュン
チェ，ラクチョン
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スージョウ レキン セミコンダクター カンパニー リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401—Structure
    • H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2018157500A 2017-08-25 2018-08-24 半導体素子 Active JP7209331B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0107964 2017-08-25
KR1020170107964A KR102410809B1 (ko) 2017-08-25 2017-08-25 반도체 소자

Publications (2)

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JP2019041109A JP2019041109A (ja) 2019-03-14
JP7209331B2 true JP7209331B2 (ja) 2023-01-20

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Country Status (6)

Country Link
US (1) US10734550B2 (zh)
EP (1) EP3447808B1 (zh)
JP (1) JP7209331B2 (zh)
KR (1) KR102410809B1 (zh)
CN (1) CN109427941B (zh)
TW (1) TWI814735B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210007766A (ko) * 2019-07-12 2021-01-20 에스케이하이닉스 주식회사 전자 장치 및 전자 장치의 제조 방법
WO2022050510A1 (ko) 2020-09-04 2022-03-10 주식회사 포톤웨이브 자외선 발광소자 및 이를 포함하는 발광소자 패키지
TWI801284B (zh) * 2022-02-25 2023-05-01 友達光電股份有限公司 顯示面板

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JP2004104132A (ja) 2002-09-09 2004-04-02 Samsung Electronics Co Ltd 高効率発光ダイオード
JP2006032779A (ja) 2004-07-20 2006-02-02 Sanyo Electric Co Ltd 窒化物半導体発光素子
WO2006043422A1 (ja) 2004-10-19 2006-04-27 Nichia Corporation 半導体素子
JP2007134533A (ja) 2005-11-11 2007-05-31 Nichia Chem Ind Ltd 半導体発光素子及びその製造方法
WO2009088084A1 (ja) 2008-01-11 2009-07-16 Rohm Co., Ltd. 半導体発光装置
JP2010056322A (ja) 2008-08-28 2010-03-11 Toshiba Corp 半導体発光素子及びその製造方法
JP2010062274A (ja) 2008-09-03 2010-03-18 Toshiba Corp 半導体発光素子及びその製造方法
WO2010146808A1 (ja) 2009-06-18 2010-12-23 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオード
WO2011027418A1 (ja) 2009-09-01 2011-03-10 株式会社 東芝 半導体発光素子及び半導体発光装置
JP2013084906A (ja) 2011-09-27 2013-05-09 Nichia Chem Ind Ltd 半導体素子
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JP2015156483A (ja) 2014-01-16 2015-08-27 株式会社トクヤマ 紫外発光ダイオード
US20150295142A1 (en) 2013-05-24 2015-10-15 Xiamen Sanan Optoelectronics Technology Co., Ltd. Surface-Mounted Light-Emitting Device and Fabrication Method Thereof
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WO2016063501A1 (ja) 2014-10-22 2016-04-28 パナソニックＩｐマネジメント株式会社 半導体デバイス及び紫外線発光素子
WO2016163083A1 (ja) 2015-04-09 2016-10-13 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子
JP2016184724A (ja) 2015-03-26 2016-10-20 エルジー イノテック カンパニー リミテッド 発光素子及びこれを含む発光素子パッケージ
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Publication number Priority date Publication date Assignee Title
JP2003110140A (ja) 2001-09-28 2003-04-11 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004104132A (ja) 2002-09-09 2004-04-02 Samsung Electronics Co Ltd 高効率発光ダイオード
JP2006032779A (ja) 2004-07-20 2006-02-02 Sanyo Electric Co Ltd 窒化物半導体発光素子
WO2006043422A1 (ja) 2004-10-19 2006-04-27 Nichia Corporation 半導体素子
JP2007134533A (ja) 2005-11-11 2007-05-31 Nichia Chem Ind Ltd 半導体発光素子及びその製造方法
WO2009088084A1 (ja) 2008-01-11 2009-07-16 Rohm Co., Ltd. 半導体発光装置
JP2010056322A (ja) 2008-08-28 2010-03-11 Toshiba Corp 半導体発光素子及びその製造方法
JP2010062274A (ja) 2008-09-03 2010-03-18 Toshiba Corp 半導体発光素子及びその製造方法
WO2010146808A1 (ja) 2009-06-18 2010-12-23 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオード
WO2011027418A1 (ja) 2009-09-01 2011-03-10 株式会社 東芝 半導体発光素子及び半導体発光装置
JP2013084906A (ja) 2011-09-27 2013-05-09 Nichia Chem Ind Ltd 半導体素子
US20150295142A1 (en) 2013-05-24 2015-10-15 Xiamen Sanan Optoelectronics Technology Co., Ltd. Surface-Mounted Light-Emitting Device and Fabrication Method Thereof
WO2015033557A1 (ja) 2013-09-05 2015-03-12 パナソニックＩｐマネジメント株式会社 発光装置
JP2015156483A (ja) 2014-01-16 2015-08-27 株式会社トクヤマ 紫外発光ダイオード
US20150372208A1 (en) 2014-06-23 2015-12-24 Seoul Viosys Co., Ltd. Light emitting device
JP2017523613A (ja) 2014-07-31 2017-08-17 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
WO2016063501A1 (ja) 2014-10-22 2016-04-28 パナソニックＩｐマネジメント株式会社 半導体デバイス及び紫外線発光素子
JP2016184724A (ja) 2015-03-26 2016-10-20 エルジー イノテック カンパニー リミテッド 発光素子及びこれを含む発光素子パッケージ
WO2016163083A1 (ja) 2015-04-09 2016-10-13 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子
WO2017078368A1 (ko) 2015-11-05 2017-05-11 서울바이오시스주식회사 자외선 발광 소자 및 그것을 제조하는 방법
JP7178712B2 (ja) 2016-09-10 2022-11-28 スージョウ レキン セミコンダクター カンパニー リミテッド 半導体素子

Also Published As

Publication number Publication date
TWI814735B (zh) 2023-09-11
US20190067524A1 (en) 2019-02-28
TW201921742A (zh) 2019-06-01
US10734550B2 (en) 2020-08-04
EP3447808B1 (en) 2021-04-14
JP2019041109A (ja) 2019-03-14
KR20190022110A (ko) 2019-03-06
CN109427941B (zh) 2023-02-17
KR102410809B1 (ko) 2022-06-20
EP3447808A1 (en) 2019-02-27
CN109427941A (zh) 2019-03-05

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