JP7204348B2 - エッチング方法およびエッチング装置 - Google Patents

エッチング方法およびエッチング装置 Download PDF

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Publication number
JP7204348B2
JP7204348B2 JP2018110555A JP2018110555A JP7204348B2 JP 7204348 B2 JP7204348 B2 JP 7204348B2 JP 2018110555 A JP2018110555 A JP 2018110555A JP 2018110555 A JP2018110555 A JP 2018110555A JP 7204348 B2 JP7204348 B2 JP 7204348B2
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Prior art keywords
gas
etching
chamber
substrate
film
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Japanese (ja)
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JP2019212872A (ja
JP2019212872A5 (https=
Inventor
聡 戸田
悟 菊島
健 中込
淑恵 小澤
軍 林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018110555A priority Critical patent/JP7204348B2/ja
Priority to CN201910471001.7A priority patent/CN110581067B/zh
Priority to KR1020190065694A priority patent/KR102282188B1/ko
Priority to TW108119287A priority patent/TWI815898B/zh
Priority to US16/434,843 priority patent/US20190378724A1/en
Publication of JP2019212872A publication Critical patent/JP2019212872A/ja
Publication of JP2019212872A5 publication Critical patent/JP2019212872A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
JP2018110555A 2018-06-08 2018-06-08 エッチング方法およびエッチング装置 Active JP7204348B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018110555A JP7204348B2 (ja) 2018-06-08 2018-06-08 エッチング方法およびエッチング装置
CN201910471001.7A CN110581067B (zh) 2018-06-08 2019-05-31 蚀刻方法及蚀刻装置
KR1020190065694A KR102282188B1 (ko) 2018-06-08 2019-06-04 에칭 방법 및 에칭 장치
TW108119287A TWI815898B (zh) 2018-06-08 2019-06-04 蝕刻方法及蝕刻裝置
US16/434,843 US20190378724A1 (en) 2018-06-08 2019-06-07 Etching method and etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018110555A JP7204348B2 (ja) 2018-06-08 2018-06-08 エッチング方法およびエッチング装置

Publications (3)

Publication Number Publication Date
JP2019212872A JP2019212872A (ja) 2019-12-12
JP2019212872A5 JP2019212872A5 (https=) 2021-03-11
JP7204348B2 true JP7204348B2 (ja) 2023-01-16

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JP2018110555A Active JP7204348B2 (ja) 2018-06-08 2018-06-08 エッチング方法およびエッチング装置

Country Status (5)

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US (1) US20190378724A1 (https=)
JP (1) JP7204348B2 (https=)
KR (1) KR102282188B1 (https=)
CN (1) CN110581067B (https=)
TW (1) TWI815898B (https=)

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US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
CN111009459B (zh) * 2019-12-26 2022-08-16 北京北方华创微电子装备有限公司 含氟残留物去除方法、刻蚀方法和氧化层清洗方法
US11329140B2 (en) * 2020-01-17 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
CN115668463A (zh) * 2020-04-01 2023-01-31 朗姆研究公司 半导体材料的选择性精确蚀刻
CN113785382B (zh) * 2020-04-10 2023-10-27 株式会社日立高新技术 蚀刻方法
JP7472634B2 (ja) * 2020-04-28 2024-04-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置
DE102020133643A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung, und halbleitervorrichtung
US11677015B2 (en) * 2020-05-13 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
JP7550534B2 (ja) * 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7535424B2 (ja) * 2020-09-29 2024-08-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
JP7589578B2 (ja) * 2021-02-16 2024-11-26 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11295960B1 (en) * 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
KR102897325B1 (ko) * 2021-12-31 2025-12-08 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN116918042A (zh) * 2022-02-14 2023-10-20 株式会社日立高新技术 蚀刻处理方法
KR102808277B1 (ko) * 2022-09-26 2025-05-15 세메스 주식회사 반도체 소자의 형성 방법 및 반도체 소자의 형성을 위한 기판 처리 시스템
JP2024062579A (ja) * 2022-10-25 2024-05-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
WO2025106307A1 (en) * 2023-11-17 2025-05-22 Lam Research Corporation Selective etch of stack using a hydrogen and fluorine containing gas and an -oh containing gas
US20250246437A1 (en) * 2024-01-26 2025-07-31 Tokyo Electron Limited Selective etching in semiconductor devices
JP2025133516A (ja) * 2024-03-01 2025-09-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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JP2000021842A (ja) 1998-06-29 2000-01-21 Shin Etsu Handotai Co Ltd 珪素半導体単結晶基板の処理方法
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Publication number Priority date Publication date Assignee Title
JP2000021842A (ja) 1998-06-29 2000-01-21 Shin Etsu Handotai Co Ltd 珪素半導体単結晶基板の処理方法
JP2013546169A (ja) 2010-10-06 2013-12-26 アプライド マテリアルズ インコーポレイテッド ３ｄメモリに適用するｐｅｃｖｄ酸化物−窒化物スタック及び酸化物−シリコンスタック
JP2016025195A (ja) 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP2016129227A (ja) 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置
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US20170084720A1 (en) 2015-09-18 2017-03-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of forming spacers for a gate of a transistor
WO2018064984A1 (zh) 2016-10-08 2018-04-12 北京北方华创微电子装备有限公司 去除晶片上的二氧化硅的方法及集成电路制造工艺

Also Published As

Publication number Publication date
CN110581067B (zh) 2023-11-21
KR102282188B1 (ko) 2021-07-26
US20190378724A1 (en) 2019-12-12
KR20190139770A (ko) 2019-12-18
CN110581067A (zh) 2019-12-17
TWI815898B (zh) 2023-09-21
JP2019212872A (ja) 2019-12-12
TW202013479A (zh) 2020-04-01

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