JP7178713B2 - パワー半導体モジュール装置及びパワー半導体モジュール製造方法 - Google Patents
パワー半導体モジュール装置及びパワー半導体モジュール製造方法 Download PDFInfo
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Description
本実施形態に係るパワー半導体モジュール装置について、図1ないし図7を用いて説明する。本実施形態に係るパワー半導体モジュール装置は、平面上に面一に配列する複数の半導体素子間を絶縁性の支持体で固定しつつ、半導体素子同士を第1面側(以下、表面側という)で電気的に接続する第1面側電極(以下、表面側電極という)として第1厚膜めっき層と、半導体素子同士を第2面側(以下、裏面側という)で電気的に接続する第2面側電極(以下、裏面側電極という)として第2厚膜めっき層とを形成し、第1厚膜めっき層と第2厚膜めっき層とを半導体素子を上下方向から支持する支持体として形成するものである。
本実施形態に係るパワー半導体モジュール装置の製造方法について、図7を用いて説明する。前記第1の実施形態における図3~図5に示したパワー半導体モジュール装置の製造方法以外にも、図7に示すような製造方法を用いてパワー半導体モジュールを製造することができる。なお、本実施形態において、前記第1の実施形態と重複する説明は省略する。
本実施形態に係るパワー半導体モジュール装置について、図8ないし図11を用いて説明する。本実施形態に係るパワー半導体モジュール装置は、表面側又は裏面側のいずれか一方の電極を前記各実施形態において説明した厚膜めっきで形成し、他の面側の電極については、導電配線金属板で形成するものである。このとき、導電配線金属板と半導体素子との電極接続面はエッジ部を介してめっき接続されるものである。本実施形態においては、例えば、パターニングが必要な方の面を導電配線金属板で電極形成し、パターニングが不要な面を厚膜めっきで電極形成する。なお、本実施形態において前記各実施形態と重複する説明は省略する。
本実施形態に係るパワー半導体モジュール装置について、図13を用いて説明する。本実施形態に係るパワー半導体モジュール装置は、前記第3の実施形態におけるパワー半導体モジュール装置の導電配線金属板83の表面にめっきによりヒートスプレッダが形成されるものである。
SW1,SW2 スイッチング素子
1 スイッチング電源回路
11 絶縁支持体
12 第1表面側電極
13 第2表面側電極
14 第1厚膜めっき層
15 第1裏面側電極
16 第2裏面側電極
17 第2厚膜めっき層
18 導電体
21 基板
22 樹脂
23 レジスト溝
26 樹脂
31 シード
41 裏面側シード
61 面
62 エッジ部
63 第1ペア
64 第2ペア
71 金属配線
72 基板
73 仮止めテープ
74 半導体素子
81 セラミックス基板
82 半導体素子
82a ダイオード
82b MOSFET
83 導電配線金属板
83a リード
83b エッジ部分
84 バンプ
85 厚膜めっき層
92 基板
95 貫通孔
98 銅薄膜
120 ヒートスプレッダ
121 レジスト
122 樹脂
Claims (14)
- 平面上に面一に配列する複数の半導体素子間が絶縁性の支持体で固定され、前記半導体素子同士を表面側又は裏面側の一方の面で電気的に接続する第1面側電極として形成されている厚膜めっき層を有しており、前記厚膜めっき層が前記半導体素子を上下方向の一方から支持し、
前記第1面側電極と反対側の面に、前記半導体素子の電極とエッジを介して接続する接続面を有する導電配線金属板を有しており、前記厚膜めっき層と前記導電配線金属板とが前記半導体素子を上下方向から支持することを特徴とするパワー半導体モジュール装置。 - 平面上に面一に配列する複数の半導体素子間が絶縁性の支持体で固定され、前記半導体素子同士を表面側又は裏面側の一方の面で電気的に接続する第1面側電極として形成されている第1厚膜めっき層を有しており、前記第1厚膜めっき層が前記半導体素子を上下方向の一方から支持し、
前記第1面側電極と反対側の面に、前記半導体素子同士を電気的に接続する第2面側電極として形成されている第2厚膜めっき層を有しており、前記第1厚膜めっき層と前記第2厚膜めっき層とが前記半導体素子を上下方向から支持し、
前記第1厚膜めっき層と前記第2厚膜めっき層とが略同一の厚さで、前記第1厚膜めっき層の表面側電極の投影面積が、前記半導体素子の投影面積の30%以上であり、前記第2厚膜めっき層の裏面側電極の投影面積が、前記半導体素子の投影面積の50%以上であり、前記表面側電極の投影面積と前記裏面側電極の投影面積との差が50%以内であることを特徴とするパワー半導体モジュール装置。 - 請求項2に記載のパワー半導体モジュール装置において、
前記第1厚膜めっき層及び前記第2厚膜めっき層のめっきの厚さが少なくとも50μm以上であることを特徴とするパワー半導体モジュール装置。 - 請求項2又は3に記載のパワー半導体モジュール装置において、
前記第1厚膜めっき層及び/又は前記第2厚膜めっき層の表面の一部又は全部が1μm以上の厚さのNi又はNi合金で被覆されていることを特徴とするパワー半導体モジュール装置。 - 請求項1に記載のパワー半導体モジュール装置において、
前記導電配線金属板の表面に熱を拡散するためのヒートスプレッダがめっきで形成されているパワー半導体モジュール装置。 - 半導体素子と、
前記半導体素子を側面方向から支持する絶縁性の支持体と、
前記半導体素子の第1の表面上の電極とエッジを介して電気的に接続し、前記半導体素子の第1の表面側から前記半導体素子と前記絶縁性の支持体とを支持する第1の導電配線金属板と、
前記半導体素子の第1の表面の反対側の面となる第2の表面上の電極とエッジを介して電気的に接続し、前記半導体素子の第2の表面側から前記半導体素子と前記絶縁性の支持体とを支持する第2の導電配線金属板とを有することを特徴とするパワー半導体モジュール装置。 - 請求項6に記載のパワー半導体モジュール装置において、
前記第1の導電配線金属板又は前記第2の導電配線金属板の少なくとも一方の表面に熱を拡散するためのヒートスプレッダがめっきで形成されているパワー半導体モジュール装置。 - 配列基板上に複数の半導体素子を面一に配列するステップと、
配列された半導体素子間を絶縁材料で埋め込むステップと、
前記半導体素子の配線部分にレジスト溝を形成するステップと、
第1面側にめっきシードを形成し、厚膜めっき処理を行うステップと、
前記配列基板を剥離するステップと、
前記配列基板が剥離された第2面側に対して、前記半導体素子の第2面側の電極にエッジを介して接続する接続面を有する導電配線金属板と前記半導体素子の第2面側の電極とをめっきで接合し、前記半導体素子同士を電気的に接続する第2面側電極を形成するステップと、
モジュール単位に分割するステップとを含むことを特徴とするパワー半導体モジュール製造方法。 - 請求項8に記載のパワー半導体モジュール製造方法において、
前記配列基板上に複数の前記半導体素子を配列すると共に、前記半導体素子と略同一の厚みを有する導電体を前記半導体素子間に配置することを特徴とするパワー半導体モジュール製造方法。 - 埋め込みの対象となる半導体素子よりも大きいサイズの貫通孔を有する絶縁基板の第1面側に、前記貫通孔の領域で前記半導体素子の第1面側の電極にエッジを介して接続する接続面を有する第1の導電配線金属板を接着するステップと、
前記貫通孔に前記半導体素子を嵌め込むステップと、
前記貫通孔内で前記絶縁基板と前記半導体素子との間を絶縁材料で埋め込むステップと、
前記第1の導電配線金属板の接続面と前記半導体素子の第1面側の電極とをめっきで接合するステップと、
前記絶縁基板の第2面側にめっきシードを形成し、厚膜めっき処理を行うステップと、
モジュール単位に分割するステップとを含むことを特徴とするパワー半導体モジュール製造方法。 - 埋め込みの対象となる半導体素子よりも大きいサイズの貫通孔を有する絶縁基板の第1面側に、前記貫通孔の領域で前記半導体素子の第1面側の電極にエッジを介して接続する接続面を有する第1の導電配線金属板を接着するステップと、
前記貫通孔に前記半導体素子を嵌め込むステップと、
前記貫通孔内で前記絶縁基板と前記半導体素子との間を絶縁材料で埋め込むステップと、
前記第1の導電配線金属板の接続面と前記半導体素子の第1面側の電極とをめっきで接合するステップと、
前記絶縁基板の第2面側に、前記貫通孔の領域で前記半導体素子の第2面側の電極にエッジを介して接続する接続面を有する第2の導電配線金属板を接着するステップと、
前記第2の導電配線金属板の接続面と前記半導体素子の第2面側の電極とをめっきで接合するステップと、
モジュール単位に分割するステップとを含むことを特徴とするパワー半導体モジュール製造方法。 - 請求項8ないし10のいずれかに記載のパワー半導体モジュール製造方法において、
前記厚膜めっき処理がCu又はCu合金でなされ、形成された厚膜めっきの表面の一部又は全部が、1μm以上のNi又はNi合金でめっきされるステップを含むことを特徴とするパワー半導体モジュール製造方法。 - 請求項8ないし10のいずれかに記載のパワー半導体モジュール製造方法において、
前記導電配線金属板の表面に熱を拡散するためのヒートスプレッダをめっきで形成するステップを含むパワー半導体モジュール製造方法。 - 請求項11に記載のパワー半導体モジュール製造方法において、
前記第1の導電配線金属板又は前記第2の導電配線金属板の少なくとも一方の表面に、熱を拡散するためのヒートスプレッダをめっきで形成するステップを含むパワー半導体モジュール製造方法。
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