JP7154429B2 - 発光ダイオード及びその製作方法 - Google Patents

発光ダイオード及びその製作方法 Download PDF

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JP7154429B2
JP7154429B2 JP2021546032A JP2021546032A JP7154429B2 JP 7154429 B2 JP7154429 B2 JP 7154429B2 JP 2021546032 A JP2021546032 A JP 2021546032A JP 2021546032 A JP2021546032 A JP 2021546032A JP 7154429 B2 JP7154429 B2 JP 7154429B2
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light emitting
light
emitting diode
ohmic contact
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JP2022508781A (ja
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晶 王
桓邵 郭
俊毅 呉
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泉州三安半導体科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2021546032A 2018-12-24 2018-12-24 発光ダイオード及びその製作方法 Active JP7154429B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/123265 WO2020132843A1 (zh) 2018-12-24 2018-12-24 一种发光二极管及其制作方法

Publications (2)

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JP2022508781A JP2022508781A (ja) 2022-01-19
JP7154429B2 true JP7154429B2 (ja) 2022-10-17

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JP2021546032A Active JP7154429B2 (ja) 2018-12-24 2018-12-24 発光ダイオード及びその製作方法

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Country Link
US (1) US20210226095A1 (zh)
EP (1) EP3905344A4 (zh)
JP (1) JP7154429B2 (zh)
CN (2) CN110710002B (zh)
TW (1) TWI695520B (zh)
WO (1) WO2020132843A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113889559B (zh) * 2020-07-02 2024-08-13 山东浪潮华光光电子股份有限公司 一种高亮度近红外发光二极管及其制备方法
WO2022257061A1 (zh) * 2021-06-10 2022-12-15 天津三安光电有限公司 发光二极管及制作方法
CN113299808B (zh) * 2021-07-05 2022-05-17 扬州乾照光电有限公司 一种led芯片及其制备方法
CN113921674B (zh) * 2021-09-30 2024-06-04 天津三安光电有限公司 发光二极管及发光装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156003A (ja) 1999-11-29 2001-06-08 Seiwa Electric Mfg Co Ltd Ｐ型窒化ガリウム系半導体の製造方法及びｐ型窒化ガリウム系半導体を用いた発光素子
CN1449060A (zh) 2002-04-04 2003-10-15 国联光电科技股份有限公司 发光二极管的结构及其制造方法
JP2008147672A (ja) 2006-12-08 2008-06-26 Samsung Electro-Mechanics Co Ltd 垂直構造ｌｅｄ素子及びその製造方法
JP2008263015A (ja) 2007-04-11 2008-10-30 Hitachi Cable Ltd 半導体発光素子
JP2008283096A (ja) 2007-05-14 2008-11-20 Hitachi Cable Ltd 半導体発光素子
JP2010114337A (ja) 2008-11-10 2010-05-20 Hitachi Cable Ltd 発光素子
JP2010192709A (ja) 2009-02-18 2010-09-02 Hitachi Cable Ltd 発光素子
JP2011165800A (ja) 2010-02-08 2011-08-25 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP2014082321A (ja) 2012-10-16 2014-05-08 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP2018032820A (ja) 2016-08-26 2018-03-01 ローム株式会社 半導体発光素子
US20180076361A1 (en) 2015-12-08 2018-03-15 Xiamen Sanan Optoelectronics Technology Co., Ltd. Fabrication Method of Vertical Light-Emitting Diode

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US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
DE102007020291A1 (de) * 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Kontaktstruktur für einen derartigen Chip
US8212273B2 (en) * 2007-07-19 2012-07-03 Photonstar Led Limited Vertical LED with conductive vias
JP4985260B2 (ja) * 2007-09-18 2012-07-25 日立電線株式会社 発光装置
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US9589792B2 (en) * 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
KR100999726B1 (ko) * 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101125025B1 (ko) * 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
JP5949294B2 (ja) * 2011-08-31 2016-07-06 日亜化学工業株式会社 半導体発光素子
US20180130926A1 (en) * 2015-02-17 2018-05-10 Genesis Photonics Inc. Light emitting diode
CN104638078B (zh) * 2015-03-05 2017-05-10 天津三安光电有限公司 发光二极管及其制作方法
US10950747B2 (en) * 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
KR101890691B1 (ko) * 2016-03-09 2018-09-28 유태경 반도체 발광 소자
JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
TWI620352B (zh) * 2017-01-20 2018-04-01 大光能源科技有限公司 覆晶發光二極體及其製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156003A (ja) 1999-11-29 2001-06-08 Seiwa Electric Mfg Co Ltd Ｐ型窒化ガリウム系半導体の製造方法及びｐ型窒化ガリウム系半導体を用いた発光素子
CN1449060A (zh) 2002-04-04 2003-10-15 国联光电科技股份有限公司 发光二极管的结构及其制造方法
JP2008147672A (ja) 2006-12-08 2008-06-26 Samsung Electro-Mechanics Co Ltd 垂直構造ｌｅｄ素子及びその製造方法
JP2008263015A (ja) 2007-04-11 2008-10-30 Hitachi Cable Ltd 半導体発光素子
JP2008283096A (ja) 2007-05-14 2008-11-20 Hitachi Cable Ltd 半導体発光素子
JP2010114337A (ja) 2008-11-10 2010-05-20 Hitachi Cable Ltd 発光素子
JP2010192709A (ja) 2009-02-18 2010-09-02 Hitachi Cable Ltd 発光素子
JP2011165800A (ja) 2010-02-08 2011-08-25 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
JP2014082321A (ja) 2012-10-16 2014-05-08 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
US20180076361A1 (en) 2015-12-08 2018-03-15 Xiamen Sanan Optoelectronics Technology Co., Ltd. Fabrication Method of Vertical Light-Emitting Diode
JP2018032820A (ja) 2016-08-26 2018-03-01 ローム株式会社 半導体発光素子

Also Published As

Publication number Publication date
CN110710002A (zh) 2020-01-17
TWI695520B (zh) 2020-06-01
US20210226095A1 (en) 2021-07-22
CN116825925A (zh) 2023-09-29
WO2020132843A1 (zh) 2020-07-02
EP3905344A1 (en) 2021-11-03
TW202025514A (zh) 2020-07-01
JP2022508781A (ja) 2022-01-19
CN110710002B (zh) 2023-06-30
EP3905344A4 (en) 2022-08-03

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