JP5069536B2 - 発光ダイオードおよびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 128
- 239000002184 metal Substances 0.000 claims description 77
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 72
- 230000005496 eutectics Effects 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 claims 2
- 230000008569 process Effects 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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Description
508 第1の電極
510 発光領域
520 抵抗接点
522 反射層
524 障壁層
526 共晶層
528 第1の金属層
529 第2の金属層
530 常設基板
540 絶縁層
542 充填物構造
546 チップ保持空間
550 チップ
600 発光ダイオード
608 第1の電極
610 発光領域
620 抵抗接点
622 反射層
624 障壁層
626 共晶層
628 金属層
630 常設基板
642 絶縁構造
650 チップ
Claims (12)
- 一時的基板を準備するステップと、
前記一時的基板の表面に発光領域を形成するステップと、
複数の抵抗接点、1つの反射層、1つの障壁層、および1つの共晶層を前記発光領域の一方の面である第1の面に順番に形成するステップと、
前記によって形成された構造を、各チップが少なくとも前記一時的基板の一部分、前記発光領域の一部分、前記複数の抵抗接点の一部分、前記反射層の一部分、前記障壁層の一部分、および前記共晶層の一部分を含む、複数のチップに分割するステップと、
常設基板を準備し、前記常設基板の表面をエッチングして各凹部の上部面積を各凹部の底面積よりも大きくした複数の凹部を形成するステップと、
前記常設基板の前記表面に、絶縁層と、互いに接しないように第1の領域および第2の領域に分割された金属層と、を順番に形成することにより前記凹部をチップ保持空間とするステップと、
チップボンディング技術によって前記チップの前記共晶層を前記チップ保持空間における前記金属層の第1の領域に接合するステップと、
前記チップの前記一時的基板を除去するステップと、
充填物構造を前記チップ保持空間および前記チップの間に形成するステップと、
前記発光領域の他方の面である第2の面、前記充填物構造の表面、および前記金属層の第2の領域の表面に接続する第1の電極を形成するステップと、を備え、
前記第1の電極は平面的な電極であって前記充填物構造の外に延びており、前記発光領域の第2の面は前記充填物構造および前記第1の電極から露出していることを特徴とする発光ダイオードの製造方法。 - 前記常設基板は、表面にSiO2を有するSi基板、AlN基板、ガラス基板、および水晶基板で成るグループから選択され、
前記一時的基板はnドープGaAs基板であることを特徴とする請求項1に記載の発光ダイオードの製造方法。 - 前記抵抗接点の材料はBe/AuまたはZn/Au合金を含み、
前記反射層はAu,Al,Ag、またはインジウムスズ酸化物と高反射率を有する金属の組合せで成るグループから選択された材料の1つで構成され、
前記障壁層はPt,Ni,W、およびインジウムスズ酸化物で成るグループから選択された材料の1つで構成され、
前記共晶層はSn/AuまたはSn/Ag合金のうちの1つで構成されることを特徴とする請求項1に記載の発光ダイオードの製造方法。 - 前記発光領域は、
nドープAlGaInP層と、
前記nドープAlGaInP層上に成長したAlGaInP活性層と、
前記AlGaInP活性層上に成長したpドープAlGaInP層と、
前記pドープAlGaInP層上に成長したpドープGaP層と、を含むことを特徴とする請求項1に記載の発光ダイオードの製造方法。 - 前記AlGaInP活性層は、二重ヘテロ構造活性層または量子井戸活性層であり、
前記発光領域の厚さは30μmから10μmの間であることを特徴とする請求項4に記載の発光ダイオードの製造方法。 - 前記充填物構造の材料はポリイミドであり、前記チップ保持空間の底面積は前記チップの面積と同じかまたはそれより大きいことを特徴とする請求項1に記載の発光ダイオードの製造方法。
- 表面にチップ保持空間が形成され、前記表面および前記チップ保持空間の表面に絶縁層が形成され、その絶縁層の上に第1の領域および第2の領域に分割して2つの領域が互いに接触しないようにした金属層が形成されている常設基板と、
前記チップ保持空間の底部において前記金属層の第1の領域に接合されると共に前記金属層の第2の領域には接触しないようにされた一方の面である第1の面を有するチップと、
前記チップと前記チップ保持空間との間に形成された充填物構造と、
前記チップの他方の面である第2の面、前記充填物構造の表面、および前記金属層の第2の領域の表面に接続する第1の電極と、を含み、
前記第1の電極は平面的な電極であって前記チップ保持空間の外に延びており、前記チップの第2の面は前記充填物構造および前記第1の電極から露出しており、
前記チップはチップボンディング技術によって前記金属層の第1の領域に接合され、前記チップは少なくとも発光領域を含み、前記発光領域が前記金属層の第1の領域および第2の領域に電気的に接続され、
前記発光領域の一方の面である第1の面に、複数の抵抗接点、1つの反射層、1つの障壁層、および1つの共晶層が順番に形成されていることを特徴とする発光ダイオード。 - 前記常設基板は、表面にSiO2を有するSi基板、AlN基板、ガラス基板、および水晶基板で成るグループから選択されることを特徴とする請求項7に記載の発光ダイオード。
- 前記抵抗接点の材料はBe/AuまたはZn/Au合金を含み、
前記反射層はAu,Al,Ag、またはインジウムスズ酸化物と高反射率を有する金属の組合せで成るグループから選択された材料の1つで構成され、
前記障壁層はPt,Ni,W、およびインジウムスズ酸化物で成るグループから選択された材料の1つで構成され、
前記共晶層はSn/AuまたはSn/Ag合金で構成されることを特徴とする請求項7に記載の発光ダイオード。 - 前記発光領域は、
nドープAlGaInP層と、
前記nドープAlGaInP層上に成長したAlGaInP活性層と、
前記AlGaInP活性層上に成長したpドープAlGaInP層と、
前記pドープAlGaInP層上に成長したpドープGaP層と、を含むことを特徴とする請求項7に記載の発光ダイオード。 - 前記AlGaInP活性層は、二重ヘテロ構造活性層または量子井戸活性層であり、
前記発光領域の厚さは30μmから10μmの間であることを特徴とする請求項10に記載の発光ダイオード。 - 前記充填物構造の材料はポリイミドであり、前記チップ保持空間の底面積は前記チップの面積と同じかまたはそれより大きいことを特徴とする請求項7に記載の発光ダイオード。
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TW579608B (en) * | 2000-11-24 | 2004-03-11 | High Link Technology Corp | Method and structure of forming electrode for light emitting device |
JP3996408B2 (ja) * | 2002-02-28 | 2007-10-24 | ローム株式会社 | 半導体発光素子およびその製造方法 |
US20040130263A1 (en) * | 2003-01-02 | 2004-07-08 | Ray-Hua Horng | High brightness led and method for producing the same |
JP4217093B2 (ja) * | 2003-03-27 | 2009-01-28 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
US7528421B2 (en) * | 2003-05-05 | 2009-05-05 | Lamina Lighting, Inc. | Surface mountable light emitting diode assemblies packaged for high temperature operation |
JP3951300B2 (ja) * | 2003-07-23 | 2007-08-01 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
JP2005050871A (ja) * | 2003-07-29 | 2005-02-24 | Kyocera Corp | 光プリンタヘッド |
JP2005129799A (ja) * | 2003-10-24 | 2005-05-19 | Seiko Epson Corp | 光源装置及びプロジェクタ |
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JP4185008B2 (ja) * | 2004-03-26 | 2008-11-19 | 株式会社東芝 | ナノインプリント用組成物およびそれを用いたパタン形成方法 |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
US20070152309A1 (en) * | 2005-12-29 | 2007-07-05 | Para Light Electronics Co., Ltd. | Light emitting diode |
-
2006
- 2006-11-07 TW TW095141205A patent/TWI324403B/zh active
-
2007
- 2007-05-15 US US11/749,139 patent/US20080105863A1/en not_active Abandoned
- 2007-10-17 JP JP2007269652A patent/JP5069536B2/ja active Active
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US20080105863A1 (en) | 2008-05-08 |
TW200822389A (en) | 2008-05-16 |
JP2008118127A (ja) | 2008-05-22 |
TWI324403B (en) | 2010-05-01 |
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