JP7146668B2 - 容量センサ回路及び半導体集積回路 - Google Patents

容量センサ回路及び半導体集積回路 Download PDF

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Publication number
JP7146668B2
JP7146668B2 JP2019029381A JP2019029381A JP7146668B2 JP 7146668 B2 JP7146668 B2 JP 7146668B2 JP 2019029381 A JP2019029381 A JP 2019029381A JP 2019029381 A JP2019029381 A JP 2019029381A JP 7146668 B2 JP7146668 B2 JP 7146668B2
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Japan
Prior art keywords
circuit
capacitance
signal
node
capacitor
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JP2019029381A
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English (en)
Japanese (ja)
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JP2020134354A (ja
Inventor
雅之 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
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Lapis Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Lapis Semiconductor Co Ltd filed Critical Lapis Semiconductor Co Ltd
Priority to JP2019029381A priority Critical patent/JP7146668B2/ja
Priority to US16/795,537 priority patent/US11368128B2/en
Priority to CN202010103544.6A priority patent/CN111595483A/zh
Publication of JP2020134354A publication Critical patent/JP2020134354A/ja
Priority to US17/742,404 priority patent/US11831281B2/en
Priority to JP2022150381A priority patent/JP7393493B2/ja
Application granted granted Critical
Publication of JP7146668B2 publication Critical patent/JP7146668B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/06—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using melting, freezing, or softening
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/005—Circuits arrangements for indicating a predetermined temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/02—Thermometers giving results other than momentary value of temperature giving means values; giving integrated values
    • G01K3/04—Thermometers giving results other than momentary value of temperature giving means values; giving integrated values in respect of time
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V3/00—Electric or magnetic prospecting or detecting; Measuring magnetic field characteristics of the earth, e.g. declination, deviation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H03K17/007—Switching arrangements with several input- or output terminals with several outputs only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Geology (AREA)
  • Remote Sensing (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
JP2019029381A 2019-02-21 2019-02-21 容量センサ回路及び半導体集積回路 Active JP7146668B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019029381A JP7146668B2 (ja) 2019-02-21 2019-02-21 容量センサ回路及び半導体集積回路
US16/795,537 US11368128B2 (en) 2019-02-21 2020-02-19 Capacitance sensor circuit and semiconductor integrated circuit
CN202010103544.6A CN111595483A (zh) 2019-02-21 2020-02-20 电容传感器电路及半导体集成电路
US17/742,404 US11831281B2 (en) 2019-02-21 2022-05-12 Semiconductor integrated circuit
JP2022150381A JP7393493B2 (ja) 2019-02-21 2022-09-21 容量センサ回路及び半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019029381A JP7146668B2 (ja) 2019-02-21 2019-02-21 容量センサ回路及び半導体集積回路

Related Child Applications (1)

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JP2022150381A Division JP7393493B2 (ja) 2019-02-21 2022-09-21 容量センサ回路及び半導体集積回路

Publications (2)

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JP2020134354A JP2020134354A (ja) 2020-08-31
JP7146668B2 true JP7146668B2 (ja) 2022-10-04

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JP2019029381A Active JP7146668B2 (ja) 2019-02-21 2019-02-21 容量センサ回路及び半導体集積回路
JP2022150381A Active JP7393493B2 (ja) 2019-02-21 2022-09-21 容量センサ回路及び半導体集積回路

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US (2) US11368128B2 (zh)
JP (2) JP7146668B2 (zh)
CN (1) CN111595483A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7146668B2 (ja) * 2019-02-21 2022-10-04 ラピスセミコンダクタ株式会社 容量センサ回路及び半導体集積回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000258272A (ja) 1999-01-04 2000-09-22 Fuji Electric Co Ltd 静電容量型圧力センサ
JP2005517945A (ja) 2002-02-15 2005-06-16 ローズマウント インコーポレイテッド ブリッジ・コンデンサ・センサ測定回路
JP2008275428A (ja) 2006-05-26 2008-11-13 Fujikura Ltd 近接検知センサ及び近接検知方法
JP2019219346A (ja) 2018-06-22 2019-12-26 ラピスセミコンダクタ株式会社 容量センサ回路、送信装置、受信装置及び半導体集積回路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000055746A (ja) * 1998-08-03 2000-02-25 Nissan Motor Co Ltd 温度検出装置及び温度検出システム
JP4752417B2 (ja) * 2005-09-16 2011-08-17 パナソニック電工株式会社 センサ装置
JP4957089B2 (ja) 2006-06-13 2012-06-20 富士ゼロックス株式会社 センサ
JP5505286B2 (ja) * 2010-12-03 2014-05-28 富士通株式会社 差動増幅回路
JP2015152508A (ja) * 2014-02-18 2015-08-24 セイコーエプソン株式会社 静電容量型センサー装置、半導体集積回路装置、及び、電子機器
JP6339833B2 (ja) * 2014-03-25 2018-06-06 エイブリック株式会社 センサ装置
JP2016096497A (ja) * 2014-11-17 2016-05-26 ラピスセミコンダクタ株式会社 イコライザ回路及び半導体集積装置
CN205175565U (zh) * 2015-03-30 2016-04-20 意法半导体股份有限公司 温度传感器器件及感测系统
US10527643B2 (en) * 2015-07-10 2020-01-07 Hitachi, Ltd. Inertia sensor with improved detection sensitivity using servo voltage to detect a physical quantity
JP6933835B2 (ja) 2017-01-25 2021-09-08 公立大学法人大阪 鉄錯体触媒を用いたカルボニル化合物のヒドロシリル化反応によるアルコキシシランの製造方法
JP7146668B2 (ja) * 2019-02-21 2022-10-04 ラピスセミコンダクタ株式会社 容量センサ回路及び半導体集積回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000258272A (ja) 1999-01-04 2000-09-22 Fuji Electric Co Ltd 静電容量型圧力センサ
JP2005517945A (ja) 2002-02-15 2005-06-16 ローズマウント インコーポレイテッド ブリッジ・コンデンサ・センサ測定回路
JP2008275428A (ja) 2006-05-26 2008-11-13 Fujikura Ltd 近接検知センサ及び近接検知方法
JP2019219346A (ja) 2018-06-22 2019-12-26 ラピスセミコンダクタ株式会社 容量センサ回路、送信装置、受信装置及び半導体集積回路

Also Published As

Publication number Publication date
CN111595483A (zh) 2020-08-28
JP7393493B2 (ja) 2023-12-06
US20220271718A1 (en) 2022-08-25
US20200274498A1 (en) 2020-08-27
JP2020134354A (ja) 2020-08-31
JP2022171941A (ja) 2022-11-11
US11831281B2 (en) 2023-11-28
US11368128B2 (en) 2022-06-21

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