JP7140148B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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JP7140148B2
JP7140148B2 JP2020008376A JP2020008376A JP7140148B2 JP 7140148 B2 JP7140148 B2 JP 7140148B2 JP 2020008376 A JP2020008376 A JP 2020008376A JP 2020008376 A JP2020008376 A JP 2020008376A JP 7140148 B2 JP7140148 B2 JP 7140148B2
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silicon carbide
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impurity concentration
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JP2020141130A5 (cg-RX-API-DMAC10.html
JP2020141130A (ja
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有一 竹内
克己 鈴木
侑佑 山下
武寛 加藤
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Denso Corp
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Denso Corp
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Priority to PCT/JP2020/005592 priority patent/WO2020175157A1/ja
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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Application Number Priority Date Filing Date Title
CN202311330705.5A CN117276345A (zh) 2019-02-27 2020-02-13 碳化硅半导体装置的制造方法
CN202080016354.9A CN113498544B (zh) 2019-02-27 2020-02-13 碳化硅半导体装置及其制造方法
PCT/JP2020/005592 WO2020175157A1 (ja) 2019-02-27 2020-02-13 炭化珪素半導体装置およびその製造方法
US17/410,044 US12057498B2 (en) 2019-02-27 2021-08-24 Silicon carbide semiconductor device and method for manufacturing same

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JP7563750B2 (ja) * 2021-03-12 2024-10-08 富士電機株式会社 炭化珪素半導体装置の製造方法
JP7613670B2 (ja) * 2021-03-19 2025-01-15 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7543960B2 (ja) * 2021-03-25 2024-09-03 株式会社デンソー 半導体装置とその製造方法
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JP7187620B1 (ja) * 2021-07-13 2022-12-12 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
JP7114824B1 (ja) 2021-09-17 2022-08-08 ヌヴォトンテクノロジージャパン株式会社 半導体装置
CN113990923B (zh) * 2021-10-20 2023-04-04 电子科技大学 一种集成沟道二极管的碳化硅双槽mosfet
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JP7852299B2 (ja) * 2022-03-04 2026-04-28 富士電機株式会社 半導体装置
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JP7757235B2 (ja) * 2022-05-13 2025-10-21 株式会社デンソー 半導体装置とその製造方法
CN114678277B (zh) * 2022-05-27 2022-08-16 深圳平创半导体有限公司 中心注入p+屏蔽区的分裂栅平面mosfet及其制造方法
CN115458584B (zh) * 2022-09-15 2025-01-28 深圳市森国科科技股份有限公司 SiC MOSFET器件结构
JP7841410B2 (ja) * 2022-11-18 2026-04-07 株式会社デンソー 炭化珪素半導体装置
JP7798759B2 (ja) * 2022-12-14 2026-01-14 株式会社デンソー 半導体装置の製造方法
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JP2025016984A (ja) * 2023-07-24 2025-02-05 富士電機株式会社 半導体装置、半導体モジュールおよび製造方法
CN118888592A (zh) * 2024-07-18 2024-11-01 长飞先进半导体(武汉)有限公司 功率器件及制备方法、功率模块、功率转换电路和车辆
CN121619920A (zh) * 2025-11-28 2026-03-06 西安龙飞电气技术有限公司 具有p型局域结构的超结mos元胞结构及其制备方法

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