JP7121237B2 - 閾値シフトの低減のためのシリコン窒化プロセス - Google Patents

閾値シフトの低減のためのシリコン窒化プロセス Download PDF

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JP7121237B2
JP7121237B2 JP2018567698A JP2018567698A JP7121237B2 JP 7121237 B2 JP7121237 B2 JP 7121237B2 JP 2018567698 A JP2018567698 A JP 2018567698A JP 2018567698 A JP2018567698 A JP 2018567698A JP 7121237 B2 JP7121237 B2 JP 7121237B2
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silicon nitride
nitride layer
nitrogen
substrate
rich
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JP2019519937A5 (enExample
JP2019519937A (ja
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ステファン デラス ニコラス
ティピルネニ ナヴィーン
セアップ リー ドン
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01358—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2018567698A 2016-06-23 2017-06-23 閾値シフトの低減のためのシリコン窒化プロセス Active JP7121237B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/191,500 2016-06-23
US15/191,500 US9741557B1 (en) 2016-06-23 2016-06-23 Silicon nitride process for reduction of threshold shift
PCT/US2017/039150 WO2017223541A1 (en) 2016-06-23 2017-06-23 Silicon nitride process for reduction of threshold shift

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JP2019519937A JP2019519937A (ja) 2019-07-11
JP2019519937A5 JP2019519937A5 (enExample) 2020-07-30
JP7121237B2 true JP7121237B2 (ja) 2022-08-18

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US (1) US9741557B1 (enExample)
JP (1) JP7121237B2 (enExample)
CN (1) CN109219887B (enExample)
WO (1) WO2017223541A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016066641A (ja) * 2014-09-22 2016-04-28 株式会社東芝 半導体装置及び半導体装置の製造方法
US11037851B2 (en) 2019-08-30 2021-06-15 Applied Materials, Inc. Nitrogen-rich silicon nitride films for thin film transistors
US11819847B2 (en) 2020-07-20 2023-11-21 Applied Materials, Inc. Nanofluidic device with silicon nitride membrane
US20260139374A1 (en) * 2024-11-21 2026-05-21 Applied Materials, Inc. Growth of gate oxide layer with silicon nitride and conversion

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205392A (ja) 2007-02-22 2008-09-04 Fujitsu Ltd 半導体装置及びその製造方法
JP2009200306A (ja) 2008-02-22 2009-09-03 Eudyna Devices Inc 半導体装置の製造方法
US20110298060A1 (en) 2010-06-02 2011-12-08 International Business Machines Corporation Interface structure for channel mobility improvement in high-k metal gate stack
JP2015103780A (ja) 2013-11-28 2015-06-04 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

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US5972804A (en) * 1997-08-05 1999-10-26 Motorola, Inc. Process for forming a semiconductor device
US6709928B1 (en) * 2001-07-31 2004-03-23 Cypress Semiconductor Corporation Semiconductor device having silicon-rich layer and method of manufacturing such a device
JP2004111447A (ja) * 2002-09-13 2004-04-08 Handotai Rikougaku Kenkyu Center:Kk 半導体装置及びその製造方法
KR100560654B1 (ko) * 2004-01-08 2006-03-16 삼성전자주식회사 질화실리콘막을 형성을 위한 질소화합물 및 이를 이용한질화실리콘 막의 형성방법
CN102915952B (zh) * 2011-08-04 2014-11-05 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN103632968B (zh) * 2012-08-21 2016-10-05 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
US9614105B2 (en) * 2013-04-22 2017-04-04 Cypress Semiconductor Corporation Charge-trap NOR with silicon-rich nitride as a charge trap layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205392A (ja) 2007-02-22 2008-09-04 Fujitsu Ltd 半導体装置及びその製造方法
JP2009200306A (ja) 2008-02-22 2009-09-03 Eudyna Devices Inc 半導体装置の製造方法
US20110298060A1 (en) 2010-06-02 2011-12-08 International Business Machines Corporation Interface structure for channel mobility improvement in high-k metal gate stack
JP2015103780A (ja) 2013-11-28 2015-06-04 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法

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US9741557B1 (en) 2017-08-22
CN109219887B (zh) 2022-11-01
CN109219887A (zh) 2019-01-15
WO2017223541A1 (en) 2017-12-28
JP2019519937A (ja) 2019-07-11

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