JP7121237B2 - 閾値シフトの低減のためのシリコン窒化プロセス - Google Patents
閾値シフトの低減のためのシリコン窒化プロセス Download PDFInfo
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- JP7121237B2 JP7121237B2 JP2018567698A JP2018567698A JP7121237B2 JP 7121237 B2 JP7121237 B2 JP 7121237B2 JP 2018567698 A JP2018567698 A JP 2018567698A JP 2018567698 A JP2018567698 A JP 2018567698A JP 7121237 B2 JP7121237 B2 JP 7121237B2
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- 238000000034 method Methods 0.000 title claims description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 20
- 229910052710 silicon Inorganic materials 0.000 title claims description 20
- 239000010703 silicon Substances 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 74
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 56
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 46
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 32
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 25
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 229910021529 ammonia Inorganic materials 0.000 claims description 21
- 238000000231 atomic layer deposition Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000000376 reactant Substances 0.000 claims description 11
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000002955 isolation Methods 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
Claims (16)
- 方法であって、
半導体デバイスの基板を提供することであって、前記基板が半導体材料を含む、前記提供することと、
FETのための領域において前記基板の上に窒素リッチシリコン窒化物層を形成することと、
前記窒素リッチシリコン窒化物層の上にシリコン窒化物層を形成することと、
前記シリコン窒化物層の上に前記FETのゲートを形成することと、
を含み、
前記窒素リッチシリコン窒化物層が、ジクロロシランとアンモニアとを用いて第1のLPCVDチャンバにおいて低圧化学気相成長(LPCVD)プロセスにより形成される、方法。 - 請求項1に記載の方法であって、
前記シリコン窒化物層を形成することが、実質的に酸化反応物がない雰囲気で実施される、方法。 - 請求項2に記載の方法であって、
前記窒素リッチシリコン窒化物層の形成の間に、前記アンモニアが前記ジクロロシランの流量の6~12倍の流量で前記第1のLPCVDチャンバ内に流される、方法。 - 請求項2に記載の方法であって、
前記第1のLPCVDチャンバにおける前記基板の温度が、前記窒素リッチシリコン窒化物層の形成の間に600℃~740℃である、方法。 - 請求項2に記載の方法であって、
前記窒素リッチシリコン窒化物層の上にシリコン窒化物層を形成することが、前記窒素リッチシリコン窒化物層上にシリコンリッチシリコン窒化物層を形成することを含む、方法。 - 請求項5に記載の方法であって、
前記シリコンリッチシリコン窒化物層が、ジクロロシランとアンモニアとを用いて第2のLPCVDチャンバにおいてLPCVDプロセスにより形成される、方法。 - 請求項6に記載の方法であって、
前記第2のLPCVDチャンバが前記第1のLPCVDチャンバである、方法。 - 請求項6に記載の方法であって、
前記アンモニアが、前記シリコンリッチシリコン窒化物層の形成の間に前記ジクロロシランの流量の3~6倍の流量で前記第2のLPCVDチャンバ内に流される、方法。 - 請求項6に記載の方法であって、
前記第2のLPCVDチャンバにおける前記基板の温度が、前記シリコンリッチシリコン窒化物層の形成の間に780℃~900℃である、方法。 - 請求項5に記載の方法であって、
前記シリコンリッチシリコン窒化物層の厚みが5ナノメートル~20ナノメートルである、方法。 - 請求項10に記載の方法であって、
前記シリコンリッチシリコン窒化物層が化学量論のシリコン窒化物材料の屈折率より0.025~0.040大きい屈折率を有し、前記屈折率が630ナノメートル~635ナノメートルの波長で判定される、方法。 - 請求項1に記載の方法であって、
前記窒素リッチシリコン窒化物層の厚みが5ナノメートル~20ナノメートルである、方法。 - 請求項1に記載の方法であって、
前記窒素リッチシリコン窒化物層が化学量論のシリコン窒化物材料の屈折率より0.015~0.030小さい屈折率を有し、前記屈折率が630ナノメートル~635ナノメートルの波長で判定される、方法。 - 方法であって、
半導体デバイスの基板を提供することであって、前記基板が半導体材料を含む、前記提供することと、
FETのための領域において前記基板の上に窒素リッチシリコン窒化物層を形成することと、
前記窒素リッチシリコン窒化物層の上にシリコン窒化物層を形成することと、
前記シリコン窒化物層の上に前記FETのゲートを形成することと、
を含み、
前記窒素リッチシリコン窒化物層の上にシリコン窒化物層を形成することが、前記窒素リッチシリコン窒化物層上に化学量論のシリコン窒化物層を形成することを含み、前記化学量論のシリコン窒化物層が約0.75のシリコン対窒素原子比を有する、方法。 - 方法であって、
半導体デバイスの基板を提供することであって、前記基板が半導体材料を含む、前記提供することと、
FETのための領域において前記基板の上に窒素リッチシリコン窒化物層を形成することと、
前記窒素リッチシリコン窒化物層の上にシリコン窒化物層を形成することと、
前記シリコン窒化物層の上に前記FETのゲートを形成することと、
を含み、
前記窒素リッチシリコン窒化物層が、テトラクロロシランとアンモニアとを用いて原子層堆積(ALD)チャンバにおいてALDプロセスにより形成される、方法。 - 請求項15に記載の方法であって、
前記ALDプロセスが、
前記基板を前記ALDチャンバにおいて約375℃の温度まで加熱することと、
前記基板が約375℃の前記温度である間に、約170ミリトールの圧力を提供するために前記テトラクロロシランを前記ALDチャンバに流すことと、
続いて、前記ALDチャンバへの前記テトラクロロシランを中断することと、
続いて、前記基板を前記ALDチャンバにおいて約550℃の温度まで加熱することと、
前記基板が約550℃の前記温度である間に、約300ミリトールの圧力を提供するために前記アンモニアを前記ALDチャンバに流すことと、
続いて、前記ALDチャンバへの前記アンモニアを中断することと、
を含む、方法。
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