JP2019519937A5 - - Google Patents
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- Publication number
- JP2019519937A5 JP2019519937A5 JP2018567698A JP2018567698A JP2019519937A5 JP 2019519937 A5 JP2019519937 A5 JP 2019519937A5 JP 2018567698 A JP2018567698 A JP 2018567698A JP 2018567698 A JP2018567698 A JP 2018567698A JP 2019519937 A5 JP2019519937 A5 JP 2019519937A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride layer
- nitrogen
- chamber
- rich silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 14
- 229910052757 nitrogen Inorganic materials 0.000 claims 13
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 11
- 238000000231 atomic layer deposition Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910021529 ammonia Inorganic materials 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/191,500 US9741557B1 (en) | 2016-06-23 | 2016-06-23 | Silicon nitride process for reduction of threshold shift |
| US15/191,500 | 2016-06-23 | ||
| PCT/US2017/039150 WO2017223541A1 (en) | 2016-06-23 | 2017-06-23 | Silicon nitride process for reduction of threshold shift |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019519937A JP2019519937A (ja) | 2019-07-11 |
| JP2019519937A5 true JP2019519937A5 (enExample) | 2020-07-30 |
| JP7121237B2 JP7121237B2 (ja) | 2022-08-18 |
Family
ID=59581289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018567698A Active JP7121237B2 (ja) | 2016-06-23 | 2017-06-23 | 閾値シフトの低減のためのシリコン窒化プロセス |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9741557B1 (enExample) |
| JP (1) | JP7121237B2 (enExample) |
| CN (1) | CN109219887B (enExample) |
| WO (1) | WO2017223541A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016066641A (ja) * | 2014-09-22 | 2016-04-28 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
| US11037851B2 (en) * | 2019-08-30 | 2021-06-15 | Applied Materials, Inc. | Nitrogen-rich silicon nitride films for thin film transistors |
| US11819847B2 (en) | 2020-07-20 | 2023-11-21 | Applied Materials, Inc. | Nanofluidic device with silicon nitride membrane |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5972804A (en) * | 1997-08-05 | 1999-10-26 | Motorola, Inc. | Process for forming a semiconductor device |
| US6709928B1 (en) * | 2001-07-31 | 2004-03-23 | Cypress Semiconductor Corporation | Semiconductor device having silicon-rich layer and method of manufacturing such a device |
| JP2004111447A (ja) * | 2002-09-13 | 2004-04-08 | Handotai Rikougaku Kenkyu Center:Kk | 半導体装置及びその製造方法 |
| KR100560654B1 (ko) * | 2004-01-08 | 2006-03-16 | 삼성전자주식회사 | 질화실리콘막을 형성을 위한 질소화합물 및 이를 이용한질화실리콘 막의 형성방법 |
| JP5186776B2 (ja) * | 2007-02-22 | 2013-04-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP5345328B2 (ja) * | 2008-02-22 | 2013-11-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| US8492852B2 (en) * | 2010-06-02 | 2013-07-23 | International Business Machines Corporation | Interface structure for channel mobility improvement in high-k metal gate stack |
| CN102915952B (zh) * | 2011-08-04 | 2014-11-05 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
| CN103632968B (zh) * | 2012-08-21 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 晶体管及其形成方法 |
| US9614105B2 (en) * | 2013-04-22 | 2017-04-04 | Cypress Semiconductor Corporation | Charge-trap NOR with silicon-rich nitride as a charge trap layer |
| JP6301640B2 (ja) * | 2013-11-28 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
-
2016
- 2016-06-23 US US15/191,500 patent/US9741557B1/en active Active
-
2017
- 2017-06-23 JP JP2018567698A patent/JP7121237B2/ja active Active
- 2017-06-23 CN CN201780031286.1A patent/CN109219887B/zh active Active
- 2017-06-23 WO PCT/US2017/039150 patent/WO2017223541A1/en not_active Ceased
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