JP7098851B2 - Rf用途のための構造体 - Google Patents
Rf用途のための構造体 Download PDFInfo
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- JP7098851B2 JP7098851B2 JP2019538653A JP2019538653A JP7098851B2 JP 7098851 B2 JP7098851 B2 JP 7098851B2 JP 2019538653 A JP2019538653 A JP 2019538653A JP 2019538653 A JP2019538653 A JP 2019538653A JP 7098851 B2 JP7098851 B2 JP 7098851B2
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- 239000000758 substrate Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000670 limiting effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000009149 molecular binding Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Waveguides (AREA)
- Physical Vapour Deposition (AREA)
Description
上面が主平面を規定する高抵抗支持基板と、
支持基板の上面に設けられた電荷トラップリッチ層と、
トラップリッチ層上に設けられた第1の誘電体層と、
第1の誘電体層上に設けられた活性層とを備える。
Claims (7)
- 上面(1a)が主平面を規定する高抵抗支持基板(1)と、
前記支持基板(1)の前記上面(1a)に設けられた電荷トラップリッチ層(2)と、
前記トラップリッチ層(2)上に設けられた第1の誘電体層(3)と、
前記第1の誘電体層(3)上に設けられた活性層(4)と、
を備える、RF用途のための構造体(100)であって、
前記構造体(100)が、
前記トラップリッチ層(2)の内部に設けられた少なくとも1つの埋め込み電極(10)を備え、前記電極(10)は導電層(11)と第2の誘電体層(13)とを備えることを特徴とする、構造体(100)。 - 上面(1a)が主平面を規定する高抵抗支持基板(1)と、
前記支持基板(1)の前記上面(1a)に設けられた電荷トラップリッチ層(2)と、
前記トラップリッチ層(2)上に設けられた第1の誘電体層(3)と、
前記第1の誘電体層(3)上に設けられた活性層(4)と、
を備える、RF用途のための構造体(100)であって、
前記構造体(100)が、
前記トラップリッチ層(2)の上方又は内部に設けられた少なくとも1つの埋め込み電極(10)を備え、前記電極(10)は導電層(11)と第2の誘電体層(13)とを備え、
前記導電層(11)が前記主平面に平行な2つの表面(11a,11b)を有し、一方の面が前記第1の誘電体層(3)と接触し、他方の面が前記第2の誘電体層(13)と接触しており、
前記電極(10)が複数の絶縁壁(14)を備え、前記複数の絶縁壁(14)は前記第1の誘電体層(3)と前記第2の誘電体層(13)の間に延在し、前記複数の絶縁壁(14)は、前記導電層(11)を複数の導電性ブロック(12)に分割すると共に、前記絶縁壁(14)により互いに絶縁されており、
前記電極(10)が、前記第1の誘電体層(3)と前記電荷トラップリッチ層(2)との間に設けられ、前記第2の誘電体層(13)が前記主平面に平行な前記電荷トラップリッチ層(2)と接触しており、
前記電極(10)が前記主平面内で不連続であり、複数の電荷トラップエリア(22)が前記第1の誘電体層(3)と前記電荷トラップリッチ層(2)との間に延在し、前記トラップエリア(22)は前記絶縁壁(14)により前記導電性ブロック(12)から絶縁されていることを特徴とする、RF用途のための構造体(100)。 - 上面(1a)が主平面を規定する高抵抗支持基板(1)と、
前記支持基板(1)の前記上面(1a)に設けられた電荷トラップリッチ層(2)と、
前記トラップリッチ層(2)上に設けられた第1の誘電体層(3)と、
前記第1の誘電体層(3)上に設けられた活性層(4)と、
を備える、RF用途のための構造体(100)であって、
前記構造体(100)が、
前記トラップリッチ層(2)の上方又は内部に設けられた少なくとも1つの埋め込み電極(10)を備え、前記電極(10)は導電層(11)と第2の誘電体層(13)とを備え、
前記電極(10)が前記電荷トラップリッチ層(2)内に設けられ、前記第2の誘電体層(13)が前記主平面に沿って前記支持基板(1)の前記上面(1a)と接触し、前記電極(10)が複数の絶縁壁(14)を備え、前記複数の絶縁壁(14)は、前記第1の誘電体層(3)と前記第2の誘電体層(13)との間に延在すると共に、前記導電層(11)の複数の導電性ブロック(12)を画定し、各導電性ブロック(12)は、前記絶縁壁(14)により、前記トラップリッチ層(2)を形成する少なくとも1つトラップエリア(23)から絶縁されていることを特徴とする、RF用途のための構造体(100)。 - 前記第2の誘電体層(13)が、5nm~100nmの厚さを有する、請求項1~3のいずれか一項に記載のRF用途のための構造体(100)。
- 前記導電層(11)が、単結晶シリコン、多結晶シリコン、及び非晶質シリコンの中から選択される材料を備える、請求項1~4のいずれか一項に記載のRF用途のための構造体(100)。
- 前記導電層(11)が、50nm~500nmの厚さを有する、請求項1~5のいずれか一項に記載のRF用途のための構造体(100)。
- 前記導電層が、数Ω・cm~数1000Ω・cmの抵抗率を有する、請求項1~6のいずれか一項に記載のRF用途のための構造体(100)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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FR1750870 | 2017-02-02 | ||
FR1750870A FR3062517B1 (fr) | 2017-02-02 | 2017-02-02 | Structure pour application radiofrequence |
PCT/FR2018/050196 WO2018142052A1 (fr) | 2017-02-02 | 2018-01-29 | Structure pour application radiofréquence |
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JP2020509576A JP2020509576A (ja) | 2020-03-26 |
JP7098851B2 true JP7098851B2 (ja) | 2022-07-12 |
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US (3) | US11043756B2 (ja) |
EP (1) | EP3577683B1 (ja) |
JP (1) | JP7098851B2 (ja) |
KR (1) | KR102520751B1 (ja) |
CN (1) | CN110235238B (ja) |
FR (1) | FR3062517B1 (ja) |
SG (1) | SG11201906975PA (ja) |
TW (1) | TWI764978B (ja) |
WO (1) | WO2018142052A1 (ja) |
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FR3086096B1 (fr) * | 2018-09-14 | 2021-08-27 | Soitec Silicon On Insulator | Procede de realisation d'un substrat avance pour une integration hybride |
FR3091010B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Structure de type semi-conducteur pour applications digitales et radiofréquences, et procédé de fabrication d’une telle structure |
FR3091004B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Structure de type semi-conducteur pour applications digitales et radiofréquences |
US11271079B2 (en) * | 2020-01-15 | 2022-03-08 | Globalfoundries U.S. Inc. | Wafer with crystalline silicon and trap rich polysilicon layer |
TWI761255B (zh) | 2021-07-08 | 2022-04-11 | 環球晶圓股份有限公司 | 晶圓及晶圓的製造方法 |
FR3136325A1 (fr) * | 2022-06-02 | 2023-12-08 | Soitec | Dispositif a ondes elastiques de surface |
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- 2018-01-29 EP EP18705431.7A patent/EP3577683B1/fr active Active
- 2018-01-29 WO PCT/FR2018/050196 patent/WO2018142052A1/fr unknown
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KR102520751B1 (ko) | 2023-04-12 |
TW201830660A (zh) | 2018-08-16 |
CN110235238B (zh) | 2023-08-29 |
KR20190112738A (ko) | 2019-10-07 |
US20220368036A1 (en) | 2022-11-17 |
EP3577683A1 (fr) | 2019-12-11 |
US20210280990A1 (en) | 2021-09-09 |
WO2018142052A1 (fr) | 2018-08-09 |
US20190372243A1 (en) | 2019-12-05 |
SG11201906975PA (en) | 2019-08-27 |
TWI764978B (zh) | 2022-05-21 |
EP3577683B1 (fr) | 2022-09-21 |
CN110235238A (zh) | 2019-09-13 |
JP2020509576A (ja) | 2020-03-26 |
FR3062517A1 (fr) | 2018-08-03 |
US11043756B2 (en) | 2021-06-22 |
US11502428B2 (en) | 2022-11-15 |
FR3062517B1 (fr) | 2019-03-15 |
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