JP7090764B2 - 光半導体装置の製造方法 - Google Patents
光半導体装置の製造方法 Download PDFInfo
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- JP7090764B2 JP7090764B2 JP2021034235A JP2021034235A JP7090764B2 JP 7090764 B2 JP7090764 B2 JP 7090764B2 JP 2021034235 A JP2021034235 A JP 2021034235A JP 2021034235 A JP2021034235 A JP 2021034235A JP 7090764 B2 JP7090764 B2 JP 7090764B2
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- 239000004065 semiconductor Substances 0.000 title claims description 137
- 230000003287 optical effect Effects 0.000 title claims description 122
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- 238000005304 joining Methods 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 description 34
- 239000010408 film Substances 0.000 description 26
- 229910000679 solder Inorganic materials 0.000 description 15
- 230000007547 defect Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Description
図1は、本願の実施の形態1に係る光半導体装置101の構成を示す正面図である。図2は、本願の実施の形態1に係る光半導体装置101の構成を示す側面図である。図1および図2に示すように、光半導体装置101では、光半導体素子21がマウント部材22の表面に搭載されている。
実施の形態1では、光半導体装置101の製造方法において、ダミーバー24を用いる場合について示したが、実施の形態2では、ダミーバーを用いない場合について説明する。
Claims (2)
- 受光部が設けられ、裏面に第二の接合材、或いは接合層が形成された光半導体素子を、表面に第一の接合材、或いは接合層が形成されたマウント部材に載置したセットを複数並列に並べて治具で挟持する工程と、
前記治具で挟持したマウント部材と光半導体素子の複数のセットを真空中で加熱し、前記第一の接合材、或いは接合層と前記第二の接合材、或いは接合層との拡散接合により前記マウント部材と前記光半導体素子を接合する工程と、
前記光半導体素子の前記受光部が設けられた面の全面に、絶縁膜を成膜する工程とを含み、
前記接合する工程と前記成膜する工程とを同時に行うことを特徴とする光半導体装置の製造方法。 - 前記第一の接合材、或いは接合層と前記第二の接合材、或いは接合層は、Auからなることを特徴とする請求項1に記載の光半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPPCT/JP2019/038160 | 2019-09-27 | ||
PCT/JP2019/038160 WO2021059485A1 (ja) | 2019-09-27 | 2019-09-27 | 光半導体装置およびその製造方法 |
JP2020537787A JP6861900B1 (ja) | 2019-09-27 | 2020-03-06 | 光半導体装置の製造方法 |
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JP2020537787A Division JP6861900B1 (ja) | 2019-09-27 | 2020-03-06 | 光半導体装置の製造方法 |
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JP2021100139A JP2021100139A (ja) | 2021-07-01 |
JP7090764B2 true JP7090764B2 (ja) | 2022-06-24 |
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JP2020537787A Active JP6861900B1 (ja) | 2019-09-27 | 2020-03-06 | 光半導体装置の製造方法 |
JP2021034235A Active JP7090764B2 (ja) | 2019-09-27 | 2021-03-04 | 光半導体装置の製造方法 |
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US (1) | US20220271495A1 (ja) |
JP (2) | JP6861900B1 (ja) |
CN (1) | CN114424415B (ja) |
TW (1) | TWI747436B (ja) |
WO (2) | WO2021059485A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244548A (ja) | 2000-03-01 | 2001-09-07 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
JP2009277944A (ja) | 2008-05-15 | 2009-11-26 | Toyoda Gosei Co Ltd | 接合体の製造方法及び発光装置の製造方法 |
JP2010010450A (ja) | 2008-06-27 | 2010-01-14 | Mitsubishi Electric Corp | 導波路型受光素子 |
JP2011200933A (ja) | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | 接合方法 |
JP2013058593A (ja) | 2011-09-08 | 2013-03-28 | Mitsubishi Electric Corp | 半導体レーザ素子の製造装置および製造方法 |
US20140112363A1 (en) | 2012-10-24 | 2014-04-24 | Alfred Feitisch | Solderless mounting for semiconductor lasers |
Family Cites Families (22)
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JP2500639B2 (ja) * | 1993-07-21 | 1996-05-29 | 日本電気株式会社 | 半導体レ―ザの端面コ―ティング膜の形成方法 |
JP3466830B2 (ja) * | 1996-09-18 | 2003-11-17 | 東芝電子エンジニアリング株式会社 | 半導体装置の製造装置及び製造方法 |
JPH10190051A (ja) * | 1996-12-20 | 1998-07-21 | Stanley Electric Co Ltd | Led発光素子 |
JP4084620B2 (ja) * | 2001-09-27 | 2008-04-30 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
JP2004214232A (ja) * | 2002-12-26 | 2004-07-29 | Shin Etsu Handotai Co Ltd | 発光素子及び発光素子の製造方法 |
CN100521261C (zh) * | 2002-11-29 | 2009-07-29 | 三垦电气株式会社 | 半导体发光元件及其制造方法 |
JP2005123530A (ja) * | 2003-10-20 | 2005-05-12 | Shin Etsu Handotai Co Ltd | 発光素子の製造方法 |
JP4320676B2 (ja) * | 2004-03-31 | 2009-08-26 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
CN1860621A (zh) * | 2004-07-12 | 2006-11-08 | 罗姆股份有限公司 | 半导体发光元件 |
JP4814503B2 (ja) * | 2004-09-14 | 2011-11-16 | スタンレー電気株式会社 | 半導体素子とその製造方法、及び電子部品ユニット |
JP4718504B2 (ja) * | 2007-03-07 | 2011-07-06 | 株式会社沖データ | 表示装置 |
JP2010192701A (ja) * | 2009-02-18 | 2010-09-02 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法 |
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US9331032B2 (en) * | 2013-03-06 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid bonding and apparatus for performing the same |
JP2015035532A (ja) * | 2013-08-09 | 2015-02-19 | シチズン電子株式会社 | Led集合プレート及びこれを用いた発光装置 |
US20170137328A1 (en) * | 2014-06-18 | 2017-05-18 | Osram Sylvania Inc. | Method of making a ceramic wavelength converter assembly |
TWI772117B (zh) * | 2015-02-17 | 2022-07-21 | 新世紀光電股份有限公司 | 發光二極體晶片 |
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2019
- 2019-09-27 WO PCT/JP2019/038160 patent/WO2021059485A1/ja active Application Filing
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2020
- 2020-03-06 JP JP2020537787A patent/JP6861900B1/ja active Active
- 2020-03-06 CN CN202080066063.0A patent/CN114424415B/zh active Active
- 2020-03-06 WO PCT/JP2020/009687 patent/WO2021059557A1/ja active Application Filing
- 2020-03-06 US US17/625,152 patent/US20220271495A1/en active Pending
- 2020-08-12 TW TW109127338A patent/TWI747436B/zh active
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2021
- 2021-03-04 JP JP2021034235A patent/JP7090764B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244548A (ja) | 2000-03-01 | 2001-09-07 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
JP2009277944A (ja) | 2008-05-15 | 2009-11-26 | Toyoda Gosei Co Ltd | 接合体の製造方法及び発光装置の製造方法 |
JP2010010450A (ja) | 2008-06-27 | 2010-01-14 | Mitsubishi Electric Corp | 導波路型受光素子 |
JP2011200933A (ja) | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | 接合方法 |
JP2013058593A (ja) | 2011-09-08 | 2013-03-28 | Mitsubishi Electric Corp | 半導体レーザ素子の製造装置および製造方法 |
US20140112363A1 (en) | 2012-10-24 | 2014-04-24 | Alfred Feitisch | Solderless mounting for semiconductor lasers |
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Publication number | Publication date |
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WO2021059557A1 (ja) | 2021-04-01 |
TW202129934A (zh) | 2021-08-01 |
JP2021100139A (ja) | 2021-07-01 |
CN114424415A (zh) | 2022-04-29 |
JPWO2021059557A1 (ja) | 2021-10-14 |
WO2021059485A1 (ja) | 2021-04-01 |
JP6861900B1 (ja) | 2021-04-21 |
US20220271495A1 (en) | 2022-08-25 |
CN114424415B (zh) | 2023-09-19 |
TWI747436B (zh) | 2021-11-21 |
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