JP7071175B2 - 被処理体を処理する方法 - Google Patents

被処理体を処理する方法 Download PDF

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JP7071175B2
JP7071175B2 JP2018046977A JP2018046977A JP7071175B2 JP 7071175 B2 JP7071175 B2 JP 7071175B2 JP 2018046977 A JP2018046977 A JP 2018046977A JP 2018046977 A JP2018046977 A JP 2018046977A JP 7071175 B2 JP7071175 B2 JP 7071175B2
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gas
film
region
plasma
forming
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JP2018182310A (ja
JP2018182310A5 (https=
Inventor
嘉英 木原
亨 久松
雅弘 田端
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW107112465A priority Critical patent/TWI754041B/zh
Priority to TW110149514A priority patent/TWI805162B/zh
Priority to KR1020180044364A priority patent/KR102670464B1/ko
Priority to US15/954,802 priority patent/US10381236B2/en
Priority to CN201810349214.8A priority patent/CN108735596B/zh
Priority to CN202310384766.3A priority patent/CN116230524B/zh
Publication of JP2018182310A publication Critical patent/JP2018182310A/ja
Priority to US16/458,378 priority patent/US10553446B2/en
Priority to US16/722,254 priority patent/US11139175B2/en
Publication of JP2018182310A5 publication Critical patent/JP2018182310A5/ja
Priority to JP2022076443A priority patent/JP7320646B2/ja
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Publication of JP7071175B2 publication Critical patent/JP7071175B2/ja
Priority to KR1020240067719A priority patent/KR20240095117A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
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    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P50/00—Etching of wafers, substrates or parts of devices
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018046977A 2017-04-18 2018-03-14 被処理体を処理する方法 Active JP7071175B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
TW107112465A TWI754041B (zh) 2017-04-18 2018-04-12 被處理體之處理方法
TW110149514A TWI805162B (zh) 2017-04-18 2018-04-12 被處理體之處理裝置
KR1020180044364A KR102670464B1 (ko) 2017-04-18 2018-04-17 피처리체를 처리하는 방법
US15/954,802 US10381236B2 (en) 2017-04-18 2018-04-17 Method of processing target object
CN202310384766.3A CN116230524B (zh) 2017-04-18 2018-04-18 处理被处理体的方法
CN201810349214.8A CN108735596B (zh) 2017-04-18 2018-04-18 处理被处理体的方法
US16/458,378 US10553446B2 (en) 2017-04-18 2019-07-01 Method of processing target object
US16/722,254 US11139175B2 (en) 2017-04-18 2019-12-20 Method of processing target object
JP2022076443A JP7320646B2 (ja) 2017-04-18 2022-05-06 被処理体を処理する方法
KR1020240067719A KR20240095117A (ko) 2017-04-18 2024-05-24 피처리체를 처리하는 방법

Applications Claiming Priority (2)

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JP2017082026 2017-04-18
JP2017082026 2017-04-18

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JP2022076443A Division JP7320646B2 (ja) 2017-04-18 2022-05-06 被処理体を処理する方法

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JP2018182310A5 JP2018182310A5 (https=) 2020-12-10
JP7071175B2 true JP7071175B2 (ja) 2022-05-18

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
CN111033701B (zh) * 2017-09-13 2023-08-04 株式会社国际电气 基板处理装置、半导体器件的制造方法以及记录介质
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7390165B2 (ja) * 2019-02-28 2023-12-01 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN111627809B (zh) 2019-02-28 2024-03-22 东京毅力科创株式会社 基片处理方法和基片处理装置
JP7114554B2 (ja) * 2019-11-22 2022-08-08 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
WO2022019103A1 (ja) * 2020-07-20 2022-01-27 東京エレクトロン株式会社 エッチング方法およびエッチング装置

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WO2014046083A1 (ja) 2012-09-18 2014-03-27 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US20160163556A1 (en) 2014-12-04 2016-06-09 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP2016181630A (ja) 2015-03-24 2016-10-13 株式会社東芝 パターン形成方法
JP2017073535A (ja) 2015-10-06 2017-04-13 東京エレクトロン株式会社 被処理体を処理する方法

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JP2002343962A (ja) * 2001-05-15 2002-11-29 Hitachi Ltd 半導体集積回路装置およびその製造方法
US20060014384A1 (en) * 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
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JP4611414B2 (ja) * 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
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