JP7071175B2 - 被処理体を処理する方法 - Google Patents

被処理体を処理する方法 Download PDF

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Publication number
JP7071175B2
JP7071175B2 JP2018046977A JP2018046977A JP7071175B2 JP 7071175 B2 JP7071175 B2 JP 7071175B2 JP 2018046977 A JP2018046977 A JP 2018046977A JP 2018046977 A JP2018046977 A JP 2018046977A JP 7071175 B2 JP7071175 B2 JP 7071175B2
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Japan
Prior art keywords
gas
film
region
plasma
forming
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JP2018046977A
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Japanese (ja)
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JP2018182310A5 (enExample
JP2018182310A (ja
Inventor
嘉英 木原
亨 久松
雅弘 田端
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW110149514A priority Critical patent/TWI805162B/zh
Priority to TW107112465A priority patent/TWI754041B/zh
Priority to KR1020180044364A priority patent/KR102670464B1/ko
Priority to US15/954,802 priority patent/US10381236B2/en
Priority to CN201810349214.8A priority patent/CN108735596B/zh
Priority to CN202310384766.3A priority patent/CN116230524A/zh
Publication of JP2018182310A publication Critical patent/JP2018182310A/ja
Priority to US16/458,378 priority patent/US10553446B2/en
Priority to US16/722,254 priority patent/US11139175B2/en
Publication of JP2018182310A5 publication Critical patent/JP2018182310A5/ja
Priority to JP2022076443A priority patent/JP7320646B2/ja
Application granted granted Critical
Publication of JP7071175B2 publication Critical patent/JP7071175B2/ja
Priority to KR1020240067719A priority patent/KR20240095117A/ko
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
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    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
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    • H01J2237/334—Etching
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018046977A 2017-04-18 2018-03-14 被処理体を処理する方法 Active JP7071175B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
TW110149514A TWI805162B (zh) 2017-04-18 2018-04-12 被處理體之處理裝置
TW107112465A TWI754041B (zh) 2017-04-18 2018-04-12 被處理體之處理方法
KR1020180044364A KR102670464B1 (ko) 2017-04-18 2018-04-17 피처리체를 처리하는 방법
US15/954,802 US10381236B2 (en) 2017-04-18 2018-04-17 Method of processing target object
CN202310384766.3A CN116230524A (zh) 2017-04-18 2018-04-18 处理被处理体的方法
CN201810349214.8A CN108735596B (zh) 2017-04-18 2018-04-18 处理被处理体的方法
US16/458,378 US10553446B2 (en) 2017-04-18 2019-07-01 Method of processing target object
US16/722,254 US11139175B2 (en) 2017-04-18 2019-12-20 Method of processing target object
JP2022076443A JP7320646B2 (ja) 2017-04-18 2022-05-06 被処理体を処理する方法
KR1020240067719A KR20240095117A (ko) 2017-04-18 2024-05-24 피처리체를 처리하는 방법

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JP2017082026 2017-04-18
JP2017082026 2017-04-18

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JP2018182310A5 JP2018182310A5 (enExample) 2020-12-10
JP7071175B2 true JP7071175B2 (ja) 2022-05-18

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JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
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