JP7069471B2 - 積層体 - Google Patents
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- JP7069471B2 JP7069471B2 JP2020515177A JP2020515177A JP7069471B2 JP 7069471 B2 JP7069471 B2 JP 7069471B2 JP 2020515177 A JP2020515177 A JP 2020515177A JP 2020515177 A JP2020515177 A JP 2020515177A JP 7069471 B2 JP7069471 B2 JP 7069471B2
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- 229920000642 polymer Polymers 0.000 claims description 143
- 229920001400 block copolymer Polymers 0.000 claims description 105
- 238000006116 polymerization reaction Methods 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 79
- 239000000126 substance Substances 0.000 claims description 77
- 125000004432 carbon atom Chemical group C* 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 63
- 238000004519 manufacturing process Methods 0.000 claims description 52
- 229920005604 random copolymer Polymers 0.000 claims description 43
- 125000004429 atom Chemical group 0.000 claims description 32
- 125000005843 halogen group Chemical group 0.000 claims description 30
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 28
- 125000000217 alkyl group Chemical group 0.000 claims description 27
- 125000003118 aryl group Chemical group 0.000 claims description 26
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 18
- 229910052717 sulfur Inorganic materials 0.000 claims description 18
- 125000004434 sulfur atom Chemical group 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 15
- 125000000524 functional group Chemical group 0.000 claims description 13
- 229920006254 polymer film Polymers 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 4
- 125000001188 haloalkyl group Chemical group 0.000 claims description 4
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 claims description 4
- 125000003700 epoxy group Chemical group 0.000 claims description 3
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- 125000005417 glycidoxyalkyl group Chemical group 0.000 claims description 3
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- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 33
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 30
- 239000010410 layer Substances 0.000 description 27
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 26
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 14
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 8
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- 125000001424 substituent group Chemical group 0.000 description 8
- LVJZCPNIJXVIAT-UHFFFAOYSA-N 1-ethenyl-2,3,4,5,6-pentafluorobenzene Chemical compound FC1=C(F)C(F)=C(C=C)C(F)=C1F LVJZCPNIJXVIAT-UHFFFAOYSA-N 0.000 description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 7
- PYLWMHQQBFSUBP-UHFFFAOYSA-N monofluorobenzene Chemical compound FC1=CC=CC=C1 PYLWMHQQBFSUBP-UHFFFAOYSA-N 0.000 description 7
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 7
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- 238000003786 synthesis reaction Methods 0.000 description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
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- 238000005481 NMR spectroscopy Methods 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 6
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- 125000000732 arylene group Chemical group 0.000 description 5
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- 125000005702 oxyalkylene group Chemical group 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- GETTZEONDQJALK-UHFFFAOYSA-N (trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC=C1 GETTZEONDQJALK-UHFFFAOYSA-N 0.000 description 4
- 239000004342 Benzoyl peroxide Substances 0.000 description 4
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 4
- 239000012190 activator Substances 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 235000019400 benzoyl peroxide Nutrition 0.000 description 4
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- 229910052801 chlorine Inorganic materials 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
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- 125000004122 cyclic group Chemical group 0.000 description 4
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 4
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- 239000012528 membrane Substances 0.000 description 4
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 4
- 239000012985 polymerization agent Substances 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 150000001339 alkali metal compounds Chemical class 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
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- 239000003505 polymerization initiator Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
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- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 2
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- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- 125000005916 2-methylpentyl group Chemical group 0.000 description 2
- XWXZOFCMZBTLHT-UHFFFAOYSA-N 3-cyano-2-propan-2-ylbenzenecarbodithioic acid Chemical compound CC(C)C1=C(C#N)C=CC=C1C(S)=S XWXZOFCMZBTLHT-UHFFFAOYSA-N 0.000 description 2
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 239000002096 quantum dot Substances 0.000 description 1
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- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
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- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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Description
このような環構造は、第1重合単位の主鎖に直接連結されているか、あるいは適切なリンカーを介して連結されていてもよい。例えば、芳香環構造がベンゼン構造であり、このような環構造が主鎖に直接連結される場合、スチレン構造が具現され得る。
NMR分析は、三重共鳴の5mmのプローブ(probe)を有するVarian Unity Inova(500MHz)分光計を含むNMR分光計を使用して常温で行った。NMR測定用溶媒(CDCl3)に分析対象物質を約10mg/ml程度の濃度に希釈して使用し、化学的移動は、ppmで表現した。
br=広い信号、s=単一線、d=二重線、dd=二重二重線、t=三重線、dt=二重三重線、q=四重線、p=五重線、m=多重線。
数平均分子量Mnおよび分子量分布は、ゲル浸透クロマトグラフィー(GPC)を使用して測定した。5mLのバイアル(vial)に測定対象の高分子物質を入れ、約1mg/mL程度の濃度となるようにテトラヒドロフラン(THF)に希釈した。次に、キャリブレーション用標準試料と分析しようとする試料をシリンジフィルタ(細孔サイズ:0.45μm)を介して濾過させた後に測定した。分析プログラムは、Agilent technologies社のChemStationを使用し、試料の溶出時間(elution time)を検量線(calibration curve)と比較して重量平均分子量Mwおよび数平均分子量Mnをそれぞれ求め、その比率Mw/Mnで分子量分布(PDI)を計算した。GPCの測定条件は、下記の通りである。
機器:Agilent technologies社の1200 series
カラム:Polymer laboratories社のPLgel mixed B 2個使用
溶媒:THF
カラム温度:35℃
サンプル濃度:1mg/mL、200μL注入
標準試料:ポリスチレン(Mp:3900000、723000、316500、52200、31400、7200、3940、485)
下記化学式Aの化合物(DPM-C12)は、次の方式で合成した。250mLのフラスコにヒドロキノン(hydroquinone)(10.0g、94.2mmol)および1-ブロモドデカン(1-Bromododecane)(23.5g、94.2mmol)を入れ、100mLのアセトニトリル(acetonitrile)に溶かした後、過量のポタシウムカーボネート(potassium carbonate)を添加し、75℃で約48時間の間窒素条件の下で反応させた。反応後、残存するポタシウムカーボネートをフィルタリングして除去し、反応に使用したアセトニトリルも除去した。これにジクロロメタン(DCM)と水の混合溶媒を添加してウォークアップし、分離した有機層を集めて、MgSO4に通過させて脱水した。カラムクロマトグラフィーでジクロロメタン(DCM)を使用して白色固体状の4-ドデシルオキシフェノール(9.8g、35.2mmol)を約37%の収率で得た。
1H-NMR(CDCl3):δ6.77(dd、4H);δd4.45(s、1H);δd3.89(t、2H);δd1.75(p、2H);δd1.43(p、2H);δd1.33-1.26(m、16H);δd0.88(t、3H)。
1H-NMR(CDCl3):δ7.02(dd、2H);δd6.89(dd、2H);δd6.32(dt、1H);δd5.73(dt、1H);δd3.94(t、2H);δd2.05(dd、3H);δd1.76(p、2H);δd1.43(p、2H);1.34-1.27(m、16H);δd0.88(t、3H)。
ペンタフルオロスチレン1.72g、ヒドロキシメチルメタクリレート0.024g、可逆的付加開裂連鎖移動(RAFT:Reversible Addition-Fragmentation Chain Transfer)試薬(2-cyano-2-propyl benzodithioate)10mg、V-40(1,1′-アゾビス(シクロヘキサンカルボニトリル)6mgおよびトリフルオロトルエン(trifluorotoluene)1.76gを10mLのフラスコ(シュレンクフラスコ)に入れ、窒素雰囲気下で常温で30分間撹拌した後、95℃で3時間の間可逆的付加開裂連鎖移動(RAFT)重合反応を行った。重合後、反応溶液を抽出溶媒であるメタノール200mLに沈殿させた後、減圧濾過後に乾燥させて、ランダム共重合体を製造した。ランダム共重合体の分子量Mnおよび分子量分布Mw/Mnは、それぞれ19,200および1.12であった。
製造例1の化合物(DPM-C12)0.520g、ペンタフルオロスチレン1.456g、グリシジルメタクリレート(glycidyl methacrylate)0.142g、アゾビスイソブチロニトリル(AIBN)3.3mgおよびテトラヒドロフラン1.62mLを10mLのフラスコ(シュレンクフラスコ)に入れ、窒素雰囲気下で常温で30分間撹拌した後、60℃で12時間の間重合反応を行った。重合後、反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過後に乾燥させて、ランダム共重合体を製造した。ランダム共重合体の分子量Mnおよび分子量分布Mw/Mnは、それぞれ39,400および1.96であった。
製造例1のモノマー(A)2.0gおよび可逆的付加開裂連鎖移動(RAFT)試薬であるシアノイソプロピルジチオベンゾエート64mg、ラジカル開始剤であるアゾビスイソブチロニトリル(AIBN)23mgおよびベンゼン5.34mLを10mLのフラスコ(シュレンクフラスコ)に入れ、窒素雰囲気下で常温で30分間撹拌した後、70℃で4時間の間 可逆的付加開裂連鎖移動(RAFT)重合反応を行った。重合後、反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させて、ピンク色の巨大開始剤を製造した。前記巨大開始剤の収率は、約82.6重量%であり、分子量Mnおよび分子量分布Mw/Mnは、それぞれ9,000および1.16であった。
ペンタフルオロスチレン2.39g、可逆的付加開裂連鎖移動(RAFT)試薬(2-hydroxyethyl-2-(((dodecylthio)carbonothioyl)thio-2-methylpropanoate)30mg、アゾビスイソブチロニトリル(AIBN)5mgおよびアニソール0.80gを10mLのフラスコ(シュレンクフラスコ)に入れ、窒素雰囲気下で常温で30分間撹拌した後、70℃で6時間の間可逆的付加開裂連鎖移動(RAFT)重合反応を行った。重合後、反応溶液を抽出溶媒であるメタノール200mLに沈殿させた後、減圧濾過後に乾燥させて、高分子(E)を製造した。ランダム共重合体の分子量Mnおよび分子量分布Mw/Mnは、それぞれ10,000および1.10であった。
製造例1のモノマー(A)0.444g、ペンタフルオロスチレン1.304g、グリシジルメタクリレート(GMA)0.142g、メタクリレートガンマブチロラクトン(GBLMA)1.304g、ラジカル開始剤であるアゾビスイソブチロニトリル(AIBN)0.033gおよびテトラヒドロフラン1.7mLを混合し、窒素雰囲気下で60℃で略12時間の間重合して、ランダム共重合体(F)を製造した。重合後、反応溶液は、抽出溶媒であるメタノールに沈殿させた後、減圧濾過後に乾燥させて、ランダム共重合体(F)を得た。ランダム共重合体(F)の分子量Mnおよび分子量分布Mw/Mnは、それぞれ34,200および2.09であった。
製造例1のモノマー(A)4.0gおよび可逆的付加開裂連鎖移動(RAFT)試薬であるシアノイソプロピルジチオベンゾエート47mg、ラジカル開始剤であるアゾビスイソブチロニトリル(AIBN)3mgおよびアニソール9.45mLを25mLのフラスコ(シュレンクフラスコ)に入れ、窒素雰囲気下で常温で30分間撹拌した後、95℃で1時間の間可逆的付加開裂連鎖移動(RAFT)重合反応を行った。重合後、反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させて、ピンク色の巨大開始剤を製造した。前記巨大開始剤の収率は、約80.6重量%であり、分子量Mnおよび分子量分布Mw/Mnは、それぞれ13,200および1.19であった。
何らの処理も施されていないシリコンウェハー上に製造例2のランダム共重合体(B)を約30nmの厚さでコートした後、下記表のように温度条件を相異に調節して(試験例1~6)5分間熱的アニーリング(thermal annealing)した。次に、前記シリコンウェハーをフルオロベンゼンに10分間浸漬して、未反応のランダム共重合体(B)を除去した。その上に、さらに製造例4のブロック共重合体(D)を約30nmの厚さでコートし、230℃で5分間熱的アニーリングして形成されるパターンを走査型電子顕微鏡(SEM;Scanning electron microscope)を通じて確認した。
製造例2のランダム共重合体(B)の代わりに、製造例5の高分子(E)を使用したことを除いて、試験例1~6と同じ条件で実験を進めた。
製造例3のランダム共重合体(C)の膜が約10nmの厚さで形成された基板の前記ランダム共重合体(C)の膜上に製造例2のランダム共重合体(B)(試験例7)および製造例5の高分子(E)(比較試験例7)をそれぞれコートした後、下記表のような温度条件で5分間熱的アニーリングした。その後、フルオロベンゼンに10分間浸漬して、未反応のランダム共重合体(B)または高分子(E)を除去した。その上に、さらにブロック共重合体(D)をコートし、230℃で5分間熱的アニーリングして形成されるラメラパターンを通じて前記ランダム共重合体(B)または高分子(E)がランダム共重合体(C)と反応したか否かを確認した。
製造例2のランダム共重合体(B)を第1高分子として第1高分子ライン10を形成し、製造例6のランダム共重合体(F)を第2高分子として第2高分子ライン20を形成して、シリコンウェハー基板上に図1に示されたようなストライプパターンを形成した。この際、第1高分子ラインの幅W1は、略60nmとし、ピッチF1は、略90nmとし、第2高分子ラインの幅W2は、略30nmとし、ピッチF2は、略90nmとした。ストライプパターンの形成は、通常の電子ビームレジスト方式と反応性イオンエッチング (Reactive Ion Etching;RIE)方式を適用して行った。まず、製造例6のランダム共重合体(F)をフルオロベンゼンに約0.2重量%の固形分の濃度となるように希釈してコーティング液を製造し、前記コーティング液を前記シリコンウェハー基板上にスピンコートして、厚さが約20nmの膜を形成した後、200℃で5分間程度アニーリングし、フルオロベンゼンにディッピング(dipping)して、未反応の成分を除去して、第2高分子層を形成した。次に、前記第2高分子層上に電子ビームレジスト材料溶液(AR-P-6200,Allresist社)をアニソール(anisole)に略重さ比で4倍希釈させた溶液をスピンコート方式で60nmの厚さでコートした。その後、170℃で5分間程度ベーク(baking)し、目的とするパターンに応じて電子ビーム露光した。その後、メチルイソブチルケトン(MIBK)およびイソプロピルアルコール(IPA)の混合溶媒(MIBK:IPA=1:3(体積比))に90秒間浸漬し、窒素ブローイング(Nitrogen blowing)して現像した。次に、前記露光および現像によりパターン化したレジスト材料をマスクとして 反応性イオンエッチング(RIE)を行って第2高分子層をパターン化し、レジスト除去剤(DMAC(N,N-ジメチルアセトアミド))に前記基板を浸漬した状態で10分間程度音波(sonication)処理して、第2高分子ラインを形成した。前記音波処理は、常温で40kHzの条件で進めた。次に、製造例2のランダム共重合体(B)をフルオロベンゼンに約1.0重量%の濃度で溶解させて得られたコーティング液を、前記第2高分子ラインが形成された基板上に約38nmの厚さでスピンコートし、120℃で5分間程度アニーリングした後、フルオロベンゼン内に基板を浸漬させて、未反応のランダム共重合体(B)を除去することによって、第1および第2高分子ラインが形成された基板を製造した。次に、製造例7のブロック共重合体(G)(約30nmのピッチのラメラパターンを形成し、高速フーリエ変換方法で確認)をフルオロベンゼンに約1.0重量%の濃度で溶解させて製造されたコーティング液を前記基板のストライプパターンの上に約40nmの厚さでコートし、約230℃で5分間熱的熟成を通じて自己組織化したブロック共重合体を含む膜を形成した。
製造例2のランダム共重合体(B)の代わりに製造例5の高分子(E)を第1高分子として使用して、ストライプパターンの製作時に前記高分子(E)のアニーリング温度を160℃としたことを除いて、実施例1と同一にストライプパターンを形成し、ブロック共重合体の自己組織化ラメラパターンを形成した。
Claims (8)
- 基板と;前記基板上で互いに交互に繰り返して配置された第1および第2高分子ラインを有するストライプパターンを含み、
前記第1高分子ラインは、主鎖に連結された環構造を有する、下記化学式6で表される第1重合単位と、下記化学式1で表される第2重合単位を有する第1高分子と、を含み、
前記第2高分子ラインは、前記第1高分子とは異なる第2高分子を含む積層体:
[化学式6]
[化学式1]
前記第2高分子は、主鎖に連結された環構造として、一つ以上のハロゲン原子を含む環構造を有する重合単位と、主鎖に連結された環構造として、8個以上の鎖形成原子を有する鎖が連結された環構造を有する重合単位を含むランダム共重合体である。 - 第1重合単位の環構造には、8個以上の鎖形成原子を有する鎖が連結されている、請求項1に記載の積層体。
- 第1高分子は、第1重合単位を50モル%以上含む、請求項1または2に記載の積層体。
- 第2重合単位は、第1重合単位100モル当たり0.4モル~10モルが存在する比率で第1高分子に含まれている、請求項3に記載の積層体。
- 第1高分子は、末端には架橋性官能基を有しない、請求項1から4のいずれか一項に記載の積層体。
- ストライプパターン上に形成され、自己組織化したブロック共重合体を有する高分子膜をさらに含み、前記ブロック共重合体は、下記化学式4の単位を有する第1ブロックと下記化学式5の単位を有する第2ブロックを含む、請求項1から5のいずれか一項に記載の積層体:
[化学式4]
[化学式5]
- 請求項1から6のいずれか一項に記載の積層体のストライプパターン上で下記化学式4の単位を有する第1ブロックと下記化学式5の単位を有する第2ブロックを含むブロック共重合体の自己組織化構造を形成する段階を含むパターン基板の製造方法:
[化学式4]
[化学式5]
- ブロック共重合体の自己組織化構造においてブロック共重合体の第1および第2ブロックのうちいずれか一つのブロックを選択的に除去する段階と;前記段階に引き続いてブロック共重合体をマスクとして基板をエッチングする段階とをさらに行う、請求項7に記載のパターン基板の製造方法。
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