JP7032148B2 - 配線基板及びその製造方法と電子部品装置 - Google Patents
配線基板及びその製造方法と電子部品装置 Download PDFInfo
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- JP7032148B2 JP7032148B2 JP2018005651A JP2018005651A JP7032148B2 JP 7032148 B2 JP7032148 B2 JP 7032148B2 JP 2018005651 A JP2018005651 A JP 2018005651A JP 2018005651 A JP2018005651 A JP 2018005651A JP 7032148 B2 JP7032148 B2 JP 7032148B2
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- 229910052751 metal Inorganic materials 0.000 claims description 207
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- 239000010949 copper Substances 0.000 claims description 46
- 238000001039 wet etching Methods 0.000 claims description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 4
- 229960003280 cupric chloride Drugs 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
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- 239000010410 layer Substances 0.000 description 325
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- 239000004065 semiconductor Substances 0.000 description 18
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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Description
図2~図13は実施形態の配線基板の製造方法を説明するための図、図14及び図15は実施形態の配線基板を説明するための図、図16及び図17は実施形態の電子部品装置を説明するための図である。
Claims (10)
- パッドと、
前記パッドの上に開口部が配置された絶縁層と、
前記パッド上から前記絶縁層の上面に配置されたシード層と、前記シード層の上に配置された金属めっき層とから形成される金属ポストと、
前記金属めっき層の上に形成された接続用金属層と
を有し、
前記金属めっき層の側面は前記接続用金属層の下端から内側に後退する凹状面となっており、
前記シード層の側面に前記金属めっき層の下端から内側に後退する食込部が形成されていることを特徴とする配線基板。 - 前記金属めっき層の上端の直径は、前記接続用金属層の直径よりも小さく、
前記金属めっき層の下端の直径は、前記金属めっき層の上端の直径よりも大きく、かつ、前記シード層の下端の直径は、前記シード層の上端の直径よりも小さいことを特徴とする請求項1に記載の配線基板。 - 前記金属めっき層の下端と前記シード層の上端は、同じ高さ位置に配置され、かつ、前記接続用金属層から内側に後退した位置に配置されていることを特徴とする請求項1又は2に記載の配線基板。
- 前記シード層は、前記パッドの上面と前記絶縁層の開口部の側壁に沿って形成され、前記絶縁層の開口部に前記金属めっき層が埋め込まれていることを特徴とする請求項1乃至3のいずれか一項に記載の配線基板。
- 前記接続用金属層は、下から順に、ニッケル層/パラジウム層/金層が積層されて形成され、
前記シード層は無電解銅めっき層であり、
前記金属めっき層は電解銅めっき層であることを特徴とする請求項1乃至4のいずれか一項に記載の配線基板。 - パッドと、
前記パッドの上に開口部が配置された絶縁層と、
前記パッド上から前記絶縁層の上面に配置されたシード層と、前記シード層の上に配置された金属めっき層とから形成される金属ポストと、
前記金属めっき層の上に形成された接続用金属層と
を有し、
前記金属めっき層の側面は前記接続用金属層の下端から内側に後退する凹状面となっており、
前記シード層の側面に前記金属めっき層の下端から内側に後退する食込部が形成されている配線基板と、
前記配線基板の金属ポスト上の接続用金属層に接続された電子部品と、
前記電子部品と前記配線基板との間に充填されたアンダーフィル樹脂と
を有することを特徴とする電子部品装置。 - パッドを備えた配線部材を用意する工程と、
前記配線部材の上に、前記パッド上に第1開口部が配置された絶縁層を形成する工程と、
前記第1開口部の内面及び前記絶縁層の上面にシード層を形成する工程と、
前記第1開口部の上に該第1開口部より拡径の第2開口部が配置されたレジスト層を前記絶縁層の上に形成する工程と、
前記第1開口部及び前記第2開口部の中の前記シード層の上に、電解めっきにより、金属めっき層と接続用金属層とを順に形成する工程と、
前記レジスト層を除去する工程と、
第1のウェットエッチングで、前記金属めっき層の側面と前記シード層とをエッチングすることにより、前記金属めっき層の側面を前記接続用金属層の下端から内側に後退する凹状面にする工程と、
第2のウェットエッチングにより、前記シード層の側面に前記金属めっき層の下端から内側に後退する食込部を形成する工程と
を有することを特徴とする配線基板の製造方法。 - 前記第1のウェットエッチングは、塩化第二銅水溶液、又はアルカリ水溶液を使用するスプレー式ウェットエッチング装置により行われ、
前記第2のウェットエッチングは、硫酸・過酸化水素水混合液を使用するスプレー式ウェットエッチング装置により行われることを特徴とする請求項7に記載の配線基板の製造方法。 - 前記第1のウェットエッチングの工程において、
前記金属めっき層の上端の直径は、前記接続用金属層の直径よりも小さく設定され、
前記金属めっき層の下端の直径は、前記金属めっき層の上端の直径よりも大きく設定され、
前記第2のウェットエッチングの工程において、
前記シード層の下端の直径は、前記シード層の上端の直径よりも小さく設定されることを特徴とする請求項7又は8に記載の配線基板の製造方法。 - 前記シード層を形成する工程において、
前記シード層は無電解銅めっき層から形成され、
前記金属めっき層と接続用金属層とを形成する工程において、
前記金属めっき層は電解銅めっき層から形成され、
前記接続用金属層は、下から順に、ニッケル層/パラジウム層/金層が積層されて形成されることを特徴とする請求項7乃至9のいずれか一項に記載の配線基板の製造方法。
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