JP7024622B2 - 炭化珪素単結晶およびその製造方法 - Google Patents

炭化珪素単結晶およびその製造方法 Download PDF

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JP7024622B2
JP7024622B2 JP2018116384A JP2018116384A JP7024622B2 JP 7024622 B2 JP7024622 B2 JP 7024622B2 JP 2018116384 A JP2018116384 A JP 2018116384A JP 2018116384 A JP2018116384 A JP 2018116384A JP 7024622 B2 JP7024622 B2 JP 7024622B2
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single crystal
sic single
heavy metal
metal element
density
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JP2019218229A (ja
JP2019218229A5 (enExample
Inventor
雄一郎 徳田
秀幸 上東
紀博 星乃
功穂 鎌田
秀一 土田
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Central Research Institute of Electric Power Industry
Denso Corp
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Central Research Institute of Electric Power Industry
Denso Corp
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Priority to JP2018116384A priority Critical patent/JP7024622B2/ja
Priority to PCT/JP2019/023877 priority patent/WO2019244834A1/ja
Priority to CN201980040774.8A priority patent/CN112334607B/zh
Publication of JP2019218229A publication Critical patent/JP2019218229A/ja
Publication of JP2019218229A5 publication Critical patent/JP2019218229A5/ja
Priority to US17/123,338 priority patent/US11846040B2/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018116384A 2018-06-19 2018-06-19 炭化珪素単結晶およびその製造方法 Active JP7024622B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018116384A JP7024622B2 (ja) 2018-06-19 2018-06-19 炭化珪素単結晶およびその製造方法
PCT/JP2019/023877 WO2019244834A1 (ja) 2018-06-19 2019-06-17 炭化珪素単結晶およびその製造方法
CN201980040774.8A CN112334607B (zh) 2018-06-19 2019-06-17 碳化硅单晶及其制造方法
US17/123,338 US11846040B2 (en) 2018-06-19 2020-12-16 Silicon carbide single crystal

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JP2018116384A JP7024622B2 (ja) 2018-06-19 2018-06-19 炭化珪素単結晶およびその製造方法

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JP2019218229A JP2019218229A (ja) 2019-12-26
JP2019218229A5 JP2019218229A5 (enExample) 2020-10-15
JP7024622B2 true JP7024622B2 (ja) 2022-02-24

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US (1) US11846040B2 (enExample)
JP (1) JP7024622B2 (enExample)
CN (1) CN112334607B (enExample)
WO (1) WO2019244834A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP7528432B2 (ja) * 2019-12-09 2024-08-06 株式会社レゾナック ＳｉＣ基板及びＳｉＣ単結晶の製造方法
CN114901875B (zh) 2020-01-24 2024-05-10 日本碍子株式会社 含有稀土的SiC基板和SiC外延层的制造方法
CN114761629B (zh) 2020-01-24 2024-06-25 日本碍子株式会社 双轴取向SiC复合基板以及半导体器件用复合基板
JP7749528B2 (ja) * 2022-10-03 2025-10-06 一般財団法人電力中央研究所 炭化珪素単結晶インゴット、炭化珪素ウェハ及び炭化珪素単結晶の製造方法
WO2024084910A1 (ja) * 2022-10-19 2024-04-25 住友電気工業株式会社 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002234800A (ja) 2001-02-07 2002-08-23 Denso Corp 炭化珪素単結晶の製造方法および炭化珪素単結晶
JP2006124247A (ja) 2004-10-29 2006-05-18 Shikusuon:Kk 炭化珪素単結晶および炭化珪素基板
WO2012029952A1 (ja) 2010-09-02 2012-03-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法、炭化ケイ素単結晶、及び炭化ケイ素単結晶基板
JP2012250864A (ja) 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素結晶インゴット、炭化珪素結晶ウエハおよび炭化珪素結晶インゴットの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE217368T1 (de) * 1997-01-22 2002-05-15 Yury Alexandrovich Vodakov Züchtung von siliziumkarbid einkristallen
US7563321B2 (en) 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
US10167573B2 (en) * 2010-11-26 2019-01-01 Shin-Etsu Chemical Co., Ltd. Method of producing SiC single crystal
JP2013173655A (ja) 2012-02-27 2013-09-05 Nagoya Institute Of Technology 半導体結晶材料およびこれを用いた半導体素子
EP2881499B1 (en) * 2013-12-06 2020-03-11 Shin-Etsu Chemical Co., Ltd. Method for growing silicon carbide crystal
JP2016098120A (ja) 2014-11-18 2016-05-30 株式会社デンソー 炭化珪素単結晶インゴットおよび炭化珪素単結晶基板
JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002234800A (ja) 2001-02-07 2002-08-23 Denso Corp 炭化珪素単結晶の製造方法および炭化珪素単結晶
JP2006124247A (ja) 2004-10-29 2006-05-18 Shikusuon:Kk 炭化珪素単結晶および炭化珪素基板
WO2012029952A1 (ja) 2010-09-02 2012-03-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法、炭化ケイ素単結晶、及び炭化ケイ素単結晶基板
JP2012250864A (ja) 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素結晶インゴット、炭化珪素結晶ウエハおよび炭化珪素結晶インゴットの製造方法

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JP2019218229A (ja) 2019-12-26
CN112334607B (zh) 2022-09-16
US20210102311A1 (en) 2021-04-08
WO2019244834A1 (ja) 2019-12-26
CN112334607A (zh) 2021-02-05
US11846040B2 (en) 2023-12-19

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