CN112334607B - 碳化硅单晶及其制造方法 - Google Patents

碳化硅单晶及其制造方法 Download PDF

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Publication number
CN112334607B
CN112334607B CN201980040774.8A CN201980040774A CN112334607B CN 112334607 B CN112334607 B CN 112334607B CN 201980040774 A CN201980040774 A CN 201980040774A CN 112334607 B CN112334607 B CN 112334607B
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single crystal
sic single
heavy metal
density
metal element
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CN112334607A (zh
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徳田雄一郎
上东秀幸
星乃纪博
土田秀一
镰田功穗
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CENTRAL RESEARCH INSTITUTE ELECT
Denso Corp
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CENTRAL RESEARCH INSTITUTE ELECT
Denso Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201980040774.8A 2018-06-19 2019-06-17 碳化硅单晶及其制造方法 Active CN112334607B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018116384A JP7024622B2 (ja) 2018-06-19 2018-06-19 炭化珪素単結晶およびその製造方法
JP2018-116384 2018-06-19
PCT/JP2019/023877 WO2019244834A1 (ja) 2018-06-19 2019-06-17 炭化珪素単結晶およびその製造方法

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CN112334607A CN112334607A (zh) 2021-02-05
CN112334607B true CN112334607B (zh) 2022-09-16

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JP (1) JP7024622B2 (enExample)
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WO (1) WO2019244834A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP7528432B2 (ja) * 2019-12-09 2024-08-06 株式会社レゾナック ＳｉＣ基板及びＳｉＣ単結晶の製造方法
WO2021149598A1 (ja) 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板
JP7282214B2 (ja) 2020-01-24 2023-05-26 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
JP7749528B2 (ja) * 2022-10-03 2025-10-06 一般財団法人電力中央研究所 炭化珪素単結晶インゴット、炭化珪素ウェハ及び炭化珪素単結晶の製造方法
WO2024084910A1 (ja) * 2022-10-19 2024-04-25 住友電気工業株式会社 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002234800A (ja) * 2001-02-07 2002-08-23 Denso Corp 炭化珪素単結晶の製造方法および炭化珪素単結晶
JP2006124247A (ja) * 2004-10-29 2006-05-18 Shikusuon:Kk 炭化珪素単結晶および炭化珪素基板
WO2012029952A1 (ja) * 2010-09-02 2012-03-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法、炭化ケイ素単結晶、及び炭化ケイ素単結晶基板
CN102534797A (zh) * 2010-11-26 2012-07-04 信越化学工业株式会社 SiC单晶的制造方法
JP2012250864A (ja) * 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素結晶インゴット、炭化珪素結晶ウエハおよび炭化珪素結晶インゴットの製造方法
CN104695019A (zh) * 2013-12-06 2015-06-10 信越化学工业株式会社 碳化硅的晶体生长方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE217368T1 (de) * 1997-01-22 2002-05-15 Yury Alexandrovich Vodakov Züchtung von siliziumkarbid einkristallen
US7563321B2 (en) 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
JP2013173655A (ja) 2012-02-27 2013-09-05 Nagoya Institute Of Technology 半導体結晶材料およびこれを用いた半導体素子
JP2016098120A (ja) 2014-11-18 2016-05-30 株式会社デンソー 炭化珪素単結晶インゴットおよび炭化珪素単結晶基板
JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002234800A (ja) * 2001-02-07 2002-08-23 Denso Corp 炭化珪素単結晶の製造方法および炭化珪素単結晶
JP2006124247A (ja) * 2004-10-29 2006-05-18 Shikusuon:Kk 炭化珪素単結晶および炭化珪素基板
WO2012029952A1 (ja) * 2010-09-02 2012-03-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法、炭化ケイ素単結晶、及び炭化ケイ素単結晶基板
CN102534797A (zh) * 2010-11-26 2012-07-04 信越化学工业株式会社 SiC单晶的制造方法
JP2012250864A (ja) * 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素結晶インゴット、炭化珪素結晶ウエハおよび炭化珪素結晶インゴットの製造方法
CN104695019A (zh) * 2013-12-06 2015-06-10 信越化学工业株式会社 碳化硅的晶体生长方法

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US11846040B2 (en) 2023-12-19
JP2019218229A (ja) 2019-12-26
WO2019244834A1 (ja) 2019-12-26
JP7024622B2 (ja) 2022-02-24
US20210102311A1 (en) 2021-04-08
CN112334607A (zh) 2021-02-05

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