JP2019218229A5 - - Google Patents
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- JP2019218229A5 JP2019218229A5 JP2018116384A JP2018116384A JP2019218229A5 JP 2019218229 A5 JP2019218229 A5 JP 2019218229A5 JP 2018116384 A JP2018116384 A JP 2018116384A JP 2018116384 A JP2018116384 A JP 2018116384A JP 2019218229 A5 JP2019218229 A5 JP 2019218229A5
- Authority
- JP
- Japan
- Prior art keywords
- metal element
- heavy metal
- single crystal
- silicon carbide
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910001385 heavy metal Inorganic materials 0.000 claims 10
- 239000013078 crystal Substances 0.000 claims 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 230000005484 gravity Effects 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018116384A JP7024622B2 (ja) | 2018-06-19 | 2018-06-19 | 炭化珪素単結晶およびその製造方法 |
| PCT/JP2019/023877 WO2019244834A1 (ja) | 2018-06-19 | 2019-06-17 | 炭化珪素単結晶およびその製造方法 |
| CN201980040774.8A CN112334607B (zh) | 2018-06-19 | 2019-06-17 | 碳化硅单晶及其制造方法 |
| US17/123,338 US11846040B2 (en) | 2018-06-19 | 2020-12-16 | Silicon carbide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018116384A JP7024622B2 (ja) | 2018-06-19 | 2018-06-19 | 炭化珪素単結晶およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019218229A JP2019218229A (ja) | 2019-12-26 |
| JP2019218229A5 true JP2019218229A5 (enExample) | 2020-10-15 |
| JP7024622B2 JP7024622B2 (ja) | 2022-02-24 |
Family
ID=68983198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018116384A Active JP7024622B2 (ja) | 2018-06-19 | 2018-06-19 | 炭化珪素単結晶およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11846040B2 (enExample) |
| JP (1) | JP7024622B2 (enExample) |
| CN (1) | CN112334607B (enExample) |
| WO (1) | WO2019244834A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7393900B2 (ja) * | 2019-09-24 | 2023-12-07 | 一般財団法人電力中央研究所 | 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法 |
| JP7528432B2 (ja) * | 2019-12-09 | 2024-08-06 | 株式会社レゾナック | ＳｉＣ基板及びＳｉＣ単結晶の製造方法 |
| CN114901875B (zh) | 2020-01-24 | 2024-05-10 | 日本碍子株式会社 | 含有稀土的SiC基板和SiC外延层的制造方法 |
| CN114761629B (zh) | 2020-01-24 | 2024-06-25 | 日本碍子株式会社 | 双轴取向SiC复合基板以及半导体器件用复合基板 |
| JP7749528B2 (ja) * | 2022-10-03 | 2025-10-06 | 一般財団法人電力中央研究所 | 炭化珪素単結晶インゴット、炭化珪素ウェハ及び炭化珪素単結晶の製造方法 |
| WO2024084910A1 (ja) * | 2022-10-19 | 2024-04-25 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE217368T1 (de) * | 1997-01-22 | 2002-05-15 | Yury Alexandrovich Vodakov | Züchtung von siliziumkarbid einkristallen |
| JP3876628B2 (ja) * | 2001-02-07 | 2007-02-07 | 株式会社デンソー | 炭化珪素単結晶の製造方法および炭化珪素単結晶 |
| JP2006124247A (ja) * | 2004-10-29 | 2006-05-18 | Shikusuon:Kk | 炭化珪素単結晶および炭化珪素基板 |
| US7563321B2 (en) | 2004-12-08 | 2009-07-21 | Cree, Inc. | Process for producing high quality large size silicon carbide crystals |
| US20130153836A1 (en) * | 2010-09-02 | 2013-06-20 | Bridgestone Corporation | Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate |
| US10167573B2 (en) * | 2010-11-26 | 2019-01-01 | Shin-Etsu Chemical Co., Ltd. | Method of producing SiC single crystal |
| JP5716998B2 (ja) * | 2011-06-01 | 2015-05-13 | 住友電気工業株式会社 | 炭化珪素結晶インゴットおよび炭化珪素結晶ウエハ |
| JP2013173655A (ja) | 2012-02-27 | 2013-09-05 | Nagoya Institute Of Technology | 半導体結晶材料およびこれを用いた半導体素子 |
| EP2881499B1 (en) * | 2013-12-06 | 2020-03-11 | Shin-Etsu Chemical Co., Ltd. | Method for growing silicon carbide crystal |
| JP2016098120A (ja) | 2014-11-18 | 2016-05-30 | 株式会社デンソー | 炭化珪素単結晶インゴットおよび炭化珪素単結晶基板 |
| JP6706786B2 (ja) * | 2015-10-30 | 2020-06-10 | 一般財団法人電力中央研究所 | エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置 |
-
2018
- 2018-06-19 JP JP2018116384A patent/JP7024622B2/ja active Active
-
2019
- 2019-06-17 WO PCT/JP2019/023877 patent/WO2019244834A1/ja not_active Ceased
- 2019-06-17 CN CN201980040774.8A patent/CN112334607B/zh active Active
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2020
- 2020-12-16 US US17/123,338 patent/US11846040B2/en active Active