JP7022651B2 - 膜をエッチングする方法及びプラズマ処理装置 - Google Patents

膜をエッチングする方法及びプラズマ処理装置 Download PDF

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JP7022651B2
JP7022651B2 JP2018101397A JP2018101397A JP7022651B2 JP 7022651 B2 JP7022651 B2 JP 7022651B2 JP 2018101397 A JP2018101397 A JP 2018101397A JP 2018101397 A JP2018101397 A JP 2018101397A JP 7022651 B2 JP7022651 B2 JP 7022651B2
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film
gas
precursor
plasma
chamber
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JP2019207911A (ja
JP2019207911A5 (enExample
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隆幸 勝沼
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018101397A priority Critical patent/JP7022651B2/ja
Priority to US16/212,847 priority patent/US10923360B2/en
Priority to TW108117401A priority patent/TWI811367B/zh
Priority to TW112125937A priority patent/TWI892179B/zh
Priority to KR1020190060375A priority patent/KR20190135413A/ko
Priority to CN201910444639.1A priority patent/CN110544628B/zh
Publication of JP2019207911A publication Critical patent/JP2019207911A/ja
Publication of JP2019207911A5 publication Critical patent/JP2019207911A5/ja
Priority to US17/152,093 priority patent/US11664236B2/en
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
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    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
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JP2018101397A 2018-05-28 2018-05-28 膜をエッチングする方法及びプラズマ処理装置 Active JP7022651B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2018101397A JP7022651B2 (ja) 2018-05-28 2018-05-28 膜をエッチングする方法及びプラズマ処理装置
US16/212,847 US10923360B2 (en) 2018-05-28 2018-12-07 Method of etching film and plasma processing apparatus
TW112125937A TWI892179B (zh) 2018-05-28 2019-05-21 電漿處理裝置
TW108117401A TWI811367B (zh) 2018-05-28 2019-05-21 膜之蝕刻方法及電漿處理裝置
KR1020190060375A KR20190135413A (ko) 2018-05-28 2019-05-23 막을 에칭하는 방법 및 플라즈마 처리장치
CN201910444639.1A CN110544628B (zh) 2018-05-28 2019-05-27 对膜进行蚀刻的方法和等离子体处理装置
US17/152,093 US11664236B2 (en) 2018-05-28 2021-01-19 Method of etching film and plasma processing apparatus

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Application Number Priority Date Filing Date Title
JP2018101397A JP7022651B2 (ja) 2018-05-28 2018-05-28 膜をエッチングする方法及びプラズマ処理装置

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JP2019207911A JP2019207911A (ja) 2019-12-05
JP2019207911A5 JP2019207911A5 (enExample) 2021-01-07
JP7022651B2 true JP7022651B2 (ja) 2022-02-18

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US (2) US10923360B2 (enExample)
JP (1) JP7022651B2 (enExample)
KR (1) KR20190135413A (enExample)
CN (1) CN110544628B (enExample)
TW (2) TWI892179B (enExample)

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CN110268508B (zh) 2017-03-27 2024-03-19 株式会社日立高新技术 等离子体处理方法
US10665665B2 (en) * 2018-10-22 2020-05-26 Micron Technology, Inc. Passivation material for a pillar adjacent a trench
JP7412257B2 (ja) * 2019-12-20 2024-01-12 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
US11355350B2 (en) * 2019-12-20 2022-06-07 Tokyo Electron Limited Etching method, substrate processing apparatus, and substrate processing system
CN114885614B (zh) * 2019-12-23 2023-12-12 应用材料公司 用于蚀刻用于半导体应用的材料层的方法
US12112954B2 (en) 2020-01-29 2024-10-08 Tokyo Electron Limited Etching method, substrate processing apparatus, and substrate processing system
JP7557969B2 (ja) * 2020-01-29 2024-09-30 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
KR102506311B1 (ko) * 2020-02-10 2023-03-06 주식회사 히타치하이테크 플라스마 처리 방법
TWI893134B (zh) * 2020-06-19 2025-08-11 日商東京威力科創股份有限公司 蝕刻方法、基板處理裝置及基板處理系統
JP7594943B2 (ja) * 2020-06-19 2024-12-05 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
TW202213517A (zh) * 2020-08-28 2022-04-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
JP7577546B2 (ja) * 2020-08-28 2024-11-05 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
JP7577012B2 (ja) 2021-03-26 2024-11-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI828187B (zh) * 2021-06-22 2024-01-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
JP7250895B2 (ja) * 2021-06-22 2023-04-03 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7313402B2 (ja) 2021-06-29 2023-07-24 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及びエッチング方法
TW202314852A (zh) 2021-07-02 2023-04-01 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
KR20240027026A (ko) * 2021-07-05 2024-02-29 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP7664139B2 (ja) * 2021-09-30 2025-04-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR20230052079A (ko) 2021-10-12 2023-04-19 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JPWO2023127820A1 (enExample) * 2021-12-28 2023-07-06
US12334354B2 (en) 2022-02-01 2025-06-17 Applied Materials, Inc. Sidewall passivation for plasma etching
JP7257088B1 (ja) * 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7577865B2 (ja) * 2022-04-18 2024-11-05 株式会社日立ハイテク プラズマ処理方法
US12463053B2 (en) * 2023-03-30 2025-11-04 Applied Materials, Inc. Method for etching high aspect ratio structures
CN120883336A (zh) * 2023-04-13 2025-10-31 东京毅力科创株式会社 蚀刻方法和等离子体处理装置
US20240347346A1 (en) * 2023-04-14 2024-10-17 Tokyo Electron Limited Semiconductor devices and methods of manufacturing the same
WO2025004625A1 (ja) * 2023-06-29 2025-01-02 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20250308895A1 (en) * 2024-03-26 2025-10-02 Tokyo Electron Limited Selective in-situ carbon-based mask protection

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