JP7019092B2 - 素子モジュール - Google Patents
素子モジュール Download PDFInfo
- Publication number
- JP7019092B2 JP7019092B2 JP2021500239A JP2021500239A JP7019092B2 JP 7019092 B2 JP7019092 B2 JP 7019092B2 JP 2021500239 A JP2021500239 A JP 2021500239A JP 2021500239 A JP2021500239 A JP 2021500239A JP 7019092 B2 JP7019092 B2 JP 7019092B2
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- element module
- input
- spacer member
- conductor plate
- conductor
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- 125000006850 spacer group Chemical group 0.000 claims description 27
- 239000004020 conductor Substances 0.000 description 46
- 238000001816 cooling Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000037431 insertion Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
従来、複数の単電池に接合されて電池積層方向に所定間隔を置いて配置された複数のバスバーを備える電池ユニットが開示されている。
電池積層方向に所定間隔を置いて配置された複数のバスバーでは、電池積層方向での複数のバスバーの位置決め精度を向上させることが困難である可能性があった。
図1は、実施形態の素子モジュール10の斜視図である。図2は、実施形態の素子モジュール10の入出力端子25をX-Z平面で切断した断面図である。
以下において、3次元空間で互いに直交するX軸、Y軸及びZ軸の各軸方向は、各軸に平行な方向である。例えば、素子モジュール10の左右方向は、X軸方向と平行である。素子モジュール10の前後方向は、Y軸方向と平行である。素子モジュール10の上下方向(厚さ方向)は、Z軸方向と平行である。
入出力端子25を形成する導体板30であるAC導体板31は、いわゆるブスバー(busbar)であって、銅等の金属によって形成されている。複数のAC導体板31は、板厚方向に並んで配置されている。板厚方向は、例えば、Z軸方向である。
図3に示すように、実施形態の素子モジュール10では、積層方向で隣り合う2つのAC導体板31の空隙35に冷却用の空気等の冷媒CWが流通することによって、複数のAC導体板31の放熱性及び冷却性が向上させられている。例えば、積層方向で隣り合う2つのAC導体板31の間に空隙35が設けられない場合に比べて、冷媒CWに接触するAC導体板31の表面積を増大させて、冷却効率を向上させることができる。
上述した実施形態において、入出力端子25の各AC導体板31とスペーサー部材33とは別体であるとしたが、これに限定されず、一体であってもよい。
図4は、実施形態の変形例での素子モジュール10の入出力端子25をX-Z平面で切断した断面図である。
図4に示すように、変形例での素子モジュール10の入出力端子25は、上述した実施形態のAC導体板31及びスペーサー部材33の組み合わせの代わりに突出部41aが設けられたAC導体板41を備える。
Claims (4)
- 素子と、
所定方向に並んで配置される3枚以上の導電部材と、
前記所定方向で隣り合う2つの前記導電部材の間に配置されるとともに各前記導電部材の一部に接するスペーサー部材と
を備え、
前記3枚以上の導電部材のうちの前記所定方向の端部に配置された導電部材に、前記素子が接続されている
素子モジュール。 - 各前記導電部材及び前記スペーサー部材は一体である
請求項1に記載の素子モジュール。 - 前記スペーサー部材の外形は、各前記導電部材の少なくとも一面から前記所定方向に突出する複数の凸状である
請求項2に記載の素子モジュール。 - 前記スペーサー部材の外形は、環状である
請求項1又は請求項2に記載の素子モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/029809 WO2021019682A1 (ja) | 2019-07-30 | 2019-07-30 | 素子モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021019682A1 JPWO2021019682A1 (ja) | 2021-09-30 |
JP7019092B2 true JP7019092B2 (ja) | 2022-02-17 |
Family
ID=74229420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021500239A Active JP7019092B2 (ja) | 2019-07-30 | 2019-07-30 | 素子モジュール |
Country Status (4)
Country | Link |
---|---|
US (1) | US11908773B2 (ja) |
JP (1) | JP7019092B2 (ja) |
CN (1) | CN113016069A (ja) |
WO (1) | WO2021019682A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006520537A (ja) | 2003-03-13 | 2006-09-07 | エフシーアイ・エクスパンシオン・ドゥ | 少なくとも一つのプレート型導電体を支持片に対して電気的に接続しかつ固定するためのシステム |
JP2006520523A (ja) | 2003-03-13 | 2006-09-07 | エフシーアイ・エクスパンシオン・ドゥ | 少なくとも一つの導体を支持片に対して電気的に接続しかつ固定するためのシステム |
JP2011108817A (ja) | 2009-11-17 | 2011-06-02 | Nippon Inter Electronics Corp | パワー半導体モジュール |
WO2016204306A1 (ja) | 2016-07-28 | 2016-12-22 | 株式会社小松製作所 | パワー半導体モジュールの端子接続構造 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514437A (en) * | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
JPH0935774A (ja) * | 1995-07-20 | 1997-02-07 | Sony Corp | 環状導電端子の固定装置 |
JP3267169B2 (ja) * | 1996-09-06 | 2002-03-18 | 株式会社日立製作所 | パワー半導体装置 |
US6114201A (en) * | 1998-06-01 | 2000-09-05 | Texas Instruments-Acer Incorporated | Method of manufacturing a multiple fin-shaped capacitor for high density DRAMs |
US7042086B2 (en) * | 2002-10-16 | 2006-05-09 | Nissan Motor Co., Ltd. | Stacked semiconductor module and assembling method of the same |
JP4631340B2 (ja) | 2004-07-27 | 2011-02-16 | トヨタ自動車株式会社 | 回転電機 |
JP5076440B2 (ja) * | 2006-10-16 | 2012-11-21 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4506848B2 (ja) * | 2008-02-08 | 2010-07-21 | 株式会社デンソー | 半導体モジュール |
JP5481148B2 (ja) * | 2009-10-02 | 2014-04-23 | 日立オートモティブシステムズ株式会社 | 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置 |
JP6171606B2 (ja) | 2013-06-18 | 2017-08-02 | 株式会社デンソー | 電池ユニット |
JP7055648B2 (ja) * | 2018-01-26 | 2022-04-18 | 三洋電機株式会社 | 蓄電装置 |
-
2019
- 2019-07-30 CN CN201980075223.5A patent/CN113016069A/zh active Pending
- 2019-07-30 JP JP2021500239A patent/JP7019092B2/ja active Active
- 2019-07-30 US US17/291,441 patent/US11908773B2/en active Active
- 2019-07-30 WO PCT/JP2019/029809 patent/WO2021019682A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006520537A (ja) | 2003-03-13 | 2006-09-07 | エフシーアイ・エクスパンシオン・ドゥ | 少なくとも一つのプレート型導電体を支持片に対して電気的に接続しかつ固定するためのシステム |
JP2006520523A (ja) | 2003-03-13 | 2006-09-07 | エフシーアイ・エクスパンシオン・ドゥ | 少なくとも一つの導体を支持片に対して電気的に接続しかつ固定するためのシステム |
JP2011108817A (ja) | 2009-11-17 | 2011-06-02 | Nippon Inter Electronics Corp | パワー半導体モジュール |
WO2016204306A1 (ja) | 2016-07-28 | 2016-12-22 | 株式会社小松製作所 | パワー半導体モジュールの端子接続構造 |
Also Published As
Publication number | Publication date |
---|---|
US11908773B2 (en) | 2024-02-20 |
US20220005746A1 (en) | 2022-01-06 |
JPWO2021019682A1 (ja) | 2021-09-30 |
CN113016069A (zh) | 2021-06-22 |
WO2021019682A1 (ja) | 2021-02-04 |
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