JP6983641B2 - 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 - Google Patents

表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 Download PDF

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JP6983641B2
JP6983641B2 JP2017234903A JP2017234903A JP6983641B2 JP 6983641 B2 JP6983641 B2 JP 6983641B2 JP 2017234903 A JP2017234903 A JP 2017234903A JP 2017234903 A JP2017234903 A JP 2017234903A JP 6983641 B2 JP6983641 B2 JP 6983641B2
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Prior art keywords
phase shift
layer
film
metal
transmittance
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JP2017234903A
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Japanese (ja)
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JP2018116266A (ja
Inventor
誠治 坪井
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Hoya Corp
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Hoya Corp
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Publication date
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Priority to TW106145020A priority Critical patent/TWI758382B/zh
Priority to KR1020180000734A priority patent/KR102541867B1/ko
Priority to CN201810039303.2A priority patent/CN108319104B/zh
Publication of JP2018116266A publication Critical patent/JP2018116266A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2017234903A 2017-01-16 2017-12-07 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法 Active JP6983641B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106145020A TWI758382B (zh) 2017-01-16 2017-12-21 相移光罩基底、相移光罩之製造方法、及顯示裝置之製造方法
KR1020180000734A KR102541867B1 (ko) 2017-01-16 2018-01-03 표시 장치 제조용 위상 시프트 마스크 블랭크, 표시 장치 제조용 위상 시프트 마스크의 제조 방법 및 표시 장치의 제조 방법
CN201810039303.2A CN108319104B (zh) 2017-01-16 2018-01-16 显示装置制造用相移掩模坯料、显示装置制造用相移掩模的制造方法及显示装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017005469 2017-01-16
JP2017005469 2017-01-16

Publications (2)

Publication Number Publication Date
JP2018116266A JP2018116266A (ja) 2018-07-26
JP6983641B2 true JP6983641B2 (ja) 2021-12-17

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JP2017234903A Active JP6983641B2 (ja) 2017-01-16 2017-12-07 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法

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Country Link
JP (1) JP6983641B2 (ko)
KR (1) KR102541867B1 (ko)
TW (1) TWI758382B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7254470B2 (ja) * 2018-09-14 2023-04-10 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法
TWI816568B (zh) * 2018-11-30 2023-09-21 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
KR102209617B1 (ko) * 2020-08-26 2021-01-28 에스케이씨 주식회사 블랭크 마스크 및 포토마스크
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162039A (ja) * 1990-10-26 1992-06-05 Nikon Corp フォトマスク
JP4497263B2 (ja) * 2000-11-20 2010-07-07 信越化学工業株式会社 フォトマスクブランクス及びその製造方法
JP2004212482A (ja) * 2002-12-27 2004-07-29 Fujitsu Ltd フォトマスクの製造方法
JP4202952B2 (ja) 2003-03-31 2008-12-24 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスク並びに位相シフトマスクブランクの製造方法および位相シフトマスクの製造方法
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006317665A (ja) * 2005-05-12 2006-11-24 Shin Etsu Chem Co Ltd 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
WO2009157506A1 (ja) * 2008-06-25 2009-12-30 Hoya株式会社 位相シフトマスクブランクおよび位相シフトマスク
JP4930737B2 (ja) * 2011-09-21 2012-05-16 信越化学工業株式会社 フォトマスクブランク及びバイナリーマスクの製造方法
KR101282040B1 (ko) 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6396118B2 (ja) * 2014-08-20 2018-09-26 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
KR101624995B1 (ko) 2014-09-26 2016-05-26 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상 반전 블랭크 마스크 및 포토마스크

Also Published As

Publication number Publication date
TW201841045A (zh) 2018-11-16
KR102541867B1 (ko) 2023-06-12
TWI758382B (zh) 2022-03-21
KR20180084635A (ko) 2018-07-25
JP2018116266A (ja) 2018-07-26

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