JP6945120B2 - 金属膜形成方法 - Google Patents

金属膜形成方法 Download PDF

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Publication number
JP6945120B2
JP6945120B2 JP2015108025A JP2015108025A JP6945120B2 JP 6945120 B2 JP6945120 B2 JP 6945120B2 JP 2015108025 A JP2015108025 A JP 2015108025A JP 2015108025 A JP2015108025 A JP 2015108025A JP 6945120 B2 JP6945120 B2 JP 6945120B2
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metal film
metal
mist
organic solvent
substrate
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JP2015108025A
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Japanese (ja)
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JP2016050357A (ja
JP2016050357A5 (https=
Inventor
真也 織田
真也 織田
俊実 人羅
俊実 人羅
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Flosfia Inc
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Flosfia Inc
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Priority to JP2015108025A priority Critical patent/JP6945120B2/ja
Application filed by Flosfia Inc filed Critical Flosfia Inc
Priority to TW104128055A priority patent/TWI597381B/zh
Priority to KR1020150121117A priority patent/KR101807544B1/ko
Priority to US14/838,126 priority patent/US9828694B2/en
Priority to EP15182652.6A priority patent/EP2990503B1/en
Priority to CN201911347903.6A priority patent/CN110952077B/zh
Priority to CN201510540239.2A priority patent/CN105386008B/zh
Publication of JP2016050357A publication Critical patent/JP2016050357A/ja
Publication of JP2016050357A5 publication Critical patent/JP2016050357A5/ja
Priority to JP2020001057A priority patent/JP6920631B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/10—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals
    • C03C2217/253—Cu
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/112—Deposition methods from solutions or suspensions by spraying

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2015108025A 2014-08-29 2015-05-27 金属膜形成方法 Active JP6945120B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2015108025A JP6945120B2 (ja) 2014-08-29 2015-05-27 金属膜形成方法
KR1020150121117A KR101807544B1 (ko) 2014-08-29 2015-08-27 금속막 형성방법
US14/838,126 US9828694B2 (en) 2014-08-29 2015-08-27 Method of forming metal film
EP15182652.6A EP2990503B1 (en) 2014-08-29 2015-08-27 Method of forming metal film
TW104128055A TWI597381B (zh) 2014-08-29 2015-08-27 Metal film formation method
CN201911347903.6A CN110952077B (zh) 2014-08-29 2015-08-28 金属膜形成方法
CN201510540239.2A CN105386008B (zh) 2014-08-29 2015-08-28 金属膜形成方法
JP2020001057A JP6920631B2 (ja) 2014-08-29 2020-01-07 金属膜形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014176648 2014-08-29
JP2014176648 2014-08-29
JP2015108025A JP6945120B2 (ja) 2014-08-29 2015-05-27 金属膜形成方法

Related Child Applications (1)

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JP2020001057A Division JP6920631B2 (ja) 2014-08-29 2020-01-07 金属膜形成方法

Publications (3)

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JP2016050357A JP2016050357A (ja) 2016-04-11
JP2016050357A5 JP2016050357A5 (https=) 2018-07-05
JP6945120B2 true JP6945120B2 (ja) 2021-10-06

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US (1) US9828694B2 (https=)
EP (1) EP2990503B1 (https=)
JP (1) JP6945120B2 (https=)
KR (1) KR101807544B1 (https=)
CN (2) CN110952077B (https=)
TW (1) TWI597381B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017154937A1 (ja) * 2016-03-11 2017-09-14 株式会社ニコン ミスト発生装置、成膜装置、ミスト発生方法、成膜方法、および、デバイス製造方法
CN107371338B (zh) * 2016-05-13 2019-08-20 苏州卫鹏机电科技有限公司 一种超薄金属层的印刷线路板的制备方法
WO2018004009A1 (ja) 2016-06-30 2018-01-04 株式会社Flosfia ｐ型酸化物半導体及びその製造方法
CN109417037B (zh) 2016-06-30 2024-03-15 株式会社Flosfia 氧化物半导体膜及其制造方法
JP2018019052A (ja) * 2016-07-30 2018-02-01 株式会社Flosfia インダクタの製造方法
JP2018019050A (ja) * 2016-07-30 2018-02-01 株式会社Flosfia 抵抗体の製造方法
JP6879483B2 (ja) * 2016-07-30 2021-06-02 株式会社Flosfia コンデンサの製造方法
JP7064723B2 (ja) * 2017-03-31 2022-05-11 株式会社Flosfia 成膜方法
CN109628910B (zh) 2017-10-07 2023-06-30 株式会社Flosfia 形成膜的方法
JP2019119931A (ja) * 2017-12-29 2019-07-22 株式会社Flosfia 処理方法
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
JP7031564B2 (ja) * 2018-11-14 2022-03-08 トヨタ自動車株式会社 燃料電池用セパレータの製造方法
JP2020092125A (ja) * 2018-12-03 2020-06-11 トヨタ自動車株式会社 成膜装置
CN110318021B (zh) * 2019-07-26 2020-08-25 中国科学技术大学 一种晶圆级二氧化钒薄膜的制备方法
JP7261410B2 (ja) * 2019-09-02 2023-04-20 信越化学工業株式会社 金属膜形成方法
US11244803B2 (en) 2020-01-23 2022-02-08 Hitachi High-Tech Corporation Plasma processing apparatus and operating method of plasma processing apparatus
CN111364020B (zh) * 2020-04-10 2022-01-28 南昌航空大学 一种气溶胶传输辅助装置及输送方法
JP7380432B2 (ja) * 2020-06-02 2023-11-15 株式会社ニコン ミスト発生装置、薄膜製造装置、及び薄膜製造方法
US12434257B2 (en) * 2020-08-05 2025-10-07 Shin-Etsu Chemical Co., Ltd. Film-forming atomizer, film-forming apparatus, and film-forming method
CN112813406B (zh) * 2020-12-30 2023-07-14 武汉工程大学 基于cvd技术在异形件表面制备三维金属单质薄膜的设备及方法
TWI911390B (zh) * 2021-03-02 2026-01-11 日商信越化學工業股份有限公司 製膜方法及製膜裝置
KR102726925B1 (ko) * 2022-08-25 2024-11-11 한국표준과학연구원 에어로졸 촉매를 이용하여 2차원 나노소재의 결정립을 조절하는 방법
CN115894392B (zh) * 2022-12-02 2024-11-12 中国科学院福建物质结构研究所 (c3h8n6i6)·3h2o化合物、双折射晶体及其制法和用途

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
EP0848658B1 (en) * 1995-08-04 2006-10-11 nGimat Co. Chemical vapor deposition and powder formation using thermal spray with near supercritical and supercritical fluid solutions
US6010969A (en) * 1996-10-02 2000-01-04 Micron Technology, Inc. Method of depositing films on semiconductor devices by using carboxylate complexes
US6482374B1 (en) 1999-06-16 2002-11-19 Nanogram Corporation Methods for producing lithium metal oxide particles
KR100460746B1 (ko) * 1999-04-13 2004-12-09 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
JP3638487B2 (ja) 1999-12-10 2005-04-13 株式会社荏原製作所 半導体素子の実装方法
JP4781571B2 (ja) * 2001-07-31 2011-09-28 エルピーダメモリ株式会社 半導体装置の製造方法
WO2003032084A2 (en) 2001-10-05 2003-04-17 Superior Micropowders Llc Low viscosity precursor compositions and methods for the deposition of conductive electronic features
JP2004277585A (ja) 2003-03-17 2004-10-07 Canon Inc 有機顔料分散体製造方法および有機顔料分散体、水性着色液ならびにインクジェット記録用液
DE102004001095A1 (de) * 2004-01-05 2005-07-28 Blue Membranes Gmbh Hochfrequenzzerstäubungsvorrichtung
JP4841338B2 (ja) * 2005-07-14 2011-12-21 株式会社野田スクリーン 成膜方法、および装置
CN101351868B (zh) * 2005-12-29 2013-03-13 3M创新有限公司 使用涂覆工艺雾化材料的方法
US8801971B2 (en) 2007-12-18 2014-08-12 Hitachi Chemical Company, Ltd. Copper conductor film and manufacturing method thereof, conductive substrate and manufacturing method thereof, copper conductor wiring and manufacturing method thereof, and treatment solution
JP2009167522A (ja) * 2007-12-21 2009-07-30 Shinko Electric Ind Co Ltd 銅膜の形成方法
KR100976264B1 (ko) 2008-03-31 2010-08-18 주식회사 잉크테크 금속 박막 형성 장치 및 이를 이용한 금속 박막 형성 방법
US20150004326A1 (en) * 2008-05-07 2015-01-01 Isaiah O. Oladeji Apparatus and method for depositing alkali metals
US20110151619A1 (en) * 2008-09-24 2011-06-23 Toshiba Mitsubishi-Electric Industrial Sys. Corp. Method of forming metal oxide film and apparatus for forming metal oxide film
JP5659495B2 (ja) 2010-01-26 2015-01-28 三菱マテリアル株式会社 電極又は配線パターンの形成方法
DE112010005624T5 (de) * 2010-06-01 2013-03-21 Kyoto University Anlage zur Bildung eines Metalloxidfilmes, Verfahren zur Bildung eines Metalloxidfilmes und Metalloxidfilm
JP2013129887A (ja) 2011-12-22 2013-07-04 Nitto Denko Corp 複合電極の形成方法
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
MX374974B (es) * 2012-10-12 2025-03-06 Vitro Vidrio Y Cristal S A De C V Un recubrimiento con propiedades de control solar para un substrato y, un metodo y sistema para depositar dicho recubrimiento sobre el substrato.

Also Published As

Publication number Publication date
TW201608048A (zh) 2016-03-01
EP2990503B1 (en) 2022-01-12
CN110952077B (zh) 2022-09-13
CN105386008A (zh) 2016-03-09
CN110952077A (zh) 2020-04-03
JP2016050357A (ja) 2016-04-11
KR20160026761A (ko) 2016-03-09
US9828694B2 (en) 2017-11-28
EP2990503A1 (en) 2016-03-02
CN105386008B (zh) 2020-01-21
US20160060788A1 (en) 2016-03-03
TWI597381B (zh) 2017-09-01
KR101807544B1 (ko) 2017-12-11

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