JP6924071B2 - インプリント装置、およびインプリントシステム内の歪みを補正するインプリント方法 - Google Patents
インプリント装置、およびインプリントシステム内の歪みを補正するインプリント方法 Download PDFInfo
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- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
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- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
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- B29C59/002—Component parts, details or accessories; Auxiliary operations
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2007/00—Flat articles, e.g. films or sheets
- B29L2007/001—Flat articles, e.g. films or sheets having irregular or rough surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2009/00—Layered products
- B29L2009/005—Layered products coated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Description
Claims (9)
- インプリント装置であって、
基板のための基板支持面を有するチャック領域を含む基板ホルダと、
少なくとも1つの凸部を含むインプリント面を有するテンプレートのためのテンプレートホルダと、
前記基板、前記テンプレート、前記基板ホルダ、又はそれらの任意の組み合わせにおける歪みの少なくとも一部に基づいて、特定エリアに成形可能材料の量を塗布するように構成されたプロセッサと、
を含み、
前記プロセッサは、前記歪みのうちの第1エリア内では第1面密度に、および第2エリア内では第2面密度に前記成形可能材料が塗布されるように、前記成形可能材料の塗布パターンを決定し、
前記第2エリアは、前記テンプレートが前記成形可能材料に接触するときに前記少なくとも1つの凸部と前記基板の主面とが前記第1エリアより近づくエリアであり、
前記第1面密度は前記第2面密度より大きい、ことを特徴とするインプリント装置。 - 前記歪みは、前記テンプレートの主面、インプリント領域内における前記チャック領域の前記基板支持面、前記インプリント領域内における前記基板の主面に沿った平面性での偏差、前記テンプレート又は前記基板における倍率又は直交性の歪みを含む、ことを特徴とする請求項1に記載のインプリント装置。
- 前記プロセッサは、前記歪みの少なくとも一部に基づいて前記成形可能材料の塗布パターンを決定するように更に構成されている、ことを特徴とする請求項1又は2に記載のインプリント装置。
- 前記第1エリアでは、前記歪みが、前記テンプレートが前記第1エリア内で前記成形可能材料に接触するときに、前記少なくとも1つの凸部と前記基板の主面とが更に離れうることを示し、
前記第2エリアでは、前記歪みが、前記テンプレートが前記第2エリア内で前記成形可能材料に接触するときに、前記少なくとも1つの凸部と前記基板の前記主面とが互いに近づきうることを示す、ことを特徴とする請求項1乃至3のいずれか1項に記載のインプリント装置。 - 少なくとも1つの凸部を含むインプリント面を有するテンプレートを設ける工程であって、前記少なくとも1つの凸部は主面を規定する工程と、
基板支持面を有するチャック領域を含む基板ホルダを設ける工程と、
前記チャック領域の上に基板を配置する工程であって、前記基板はインプリント領域内に主面を有する工程と、
前記基板、前記テンプレート、インプリント装置、又はそれらの任意の組み合わせにおける歪みを定量化する工程と、
前記歪みの少なくとも一部に基づいて、前記基板の前記主面の上に成形可能材料を塗布する工程と、
を含み、
前記成形可能材料を塗布する工程は、前記歪みのうちの第1エリア内では第1面密度に、および第2エリア内では第2面密度に前記成形可能材料が塗布されるように行われ、
前記第2エリアは、前記テンプレートが前記成形可能材料に接触するときに前記少なくとも1つの凸部と前記基板の主面とが前記第1エリアより近づくエリアであり、
前記第1面密度は前記第2面密度より大きい、ことを特徴とする方法。 - 前記第1エリアでは、前記歪みが、前記テンプレートが前記第1エリア内で前記成形可能材料に接触するときに、前記少なくとも1つの凸部と前記主面とが更に離れうることを示し、
前記第2エリアでは、前記歪みが、前記テンプレートが前記第2エリア内で前記成形可能材料に接触するときに、前記少なくとも1つの凸部と前記主面とが互いに近づきうることを示す、ことを特徴とする請求項5に記載の方法。 - 前記第1エリアおよび第2エリアは、同じ凸部の異なる離間したエリアに対応する、ことを特徴とする請求項6に記載の方法。
- 前記成形可能材料を重合させてポリマ層を形成するように前記成形可能材料を紫外線に曝す工程を更に含み、前記ポリマ層は、第1エリア内で第1厚および第2エリア内で第2厚を含み、前記第1厚は前記第2厚より厚い、ことを特徴とする請求項6に記載の方法。
- 前記基板は半導体ウェハである、ことを特徴とする請求項5乃至8のいずれか1項に記載の方法。
Applications Claiming Priority (2)
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US15/162,130 | 2016-05-23 | ||
US15/162,130 US9993962B2 (en) | 2016-05-23 | 2016-05-23 | Method of imprinting to correct for a distortion within an imprint system |
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JP2017212439A JP2017212439A (ja) | 2017-11-30 |
JP2017212439A5 JP2017212439A5 (ja) | 2020-06-18 |
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US10553501B2 (en) * | 2018-03-28 | 2020-02-04 | Canon Kabushiki Kaisha | Apparatus for use in forming an adaptive layer and a method of using the same |
JP2020047691A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 摺動阻害箇所抽出方法、パターン形成方法、及び半導体装置の製造方法 |
TWI670478B (zh) * | 2018-10-11 | 2019-09-01 | 奇景光電股份有限公司 | 用以量測於壓印時的平行度之平行度量測裝置及其方法 |
JP7451141B2 (ja) | 2019-10-30 | 2024-03-18 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
US11550216B2 (en) | 2019-11-25 | 2023-01-10 | Canon Kabushiki Kaisha | Systems and methods for curing a shaped film |
US11567401B2 (en) * | 2019-12-20 | 2023-01-31 | Canon Kabushiki Kaisha | Nanofabrication method with correction of distortion within an imprint system |
US11262652B2 (en) | 2020-06-25 | 2022-03-01 | Canon Kabushiki Kaisha | Nanofabrication method with correction of distortion within an imprint system |
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US20050270516A1 (en) | 2004-06-03 | 2005-12-08 | Molecular Imprints, Inc. | System for magnification and distortion correction during nano-scale manufacturing |
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