JP6917868B2 - 基板処理方法および基板処理装置 - Google Patents

基板処理方法および基板処理装置 Download PDF

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Publication number
JP6917868B2
JP6917868B2 JP2017220075A JP2017220075A JP6917868B2 JP 6917868 B2 JP6917868 B2 JP 6917868B2 JP 2017220075 A JP2017220075 A JP 2017220075A JP 2017220075 A JP2017220075 A JP 2017220075A JP 6917868 B2 JP6917868 B2 JP 6917868B2
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Japan
Prior art keywords
phosphoric acid
aqueous solution
acid aqueous
tank
substrate
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JP2017220075A
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English (en)
Japanese (ja)
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JP2019091815A5 (https=
JP2019091815A (ja
Inventor
修 堀口
修 堀口
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
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Priority to JP2017220075A priority Critical patent/JP6917868B2/ja
Priority to PCT/JP2018/037581 priority patent/WO2019097901A1/ja
Priority to CN201880073324.4A priority patent/CN111344839B/zh
Priority to KR1020207013563A priority patent/KR102483802B1/ko
Priority to TW107137207A priority patent/TWI701086B/zh
Publication of JP2019091815A publication Critical patent/JP2019091815A/ja
Publication of JP2019091815A5 publication Critical patent/JP2019091815A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2017220075A 2017-11-15 2017-11-15 基板処理方法および基板処理装置 Active JP6917868B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017220075A JP6917868B2 (ja) 2017-11-15 2017-11-15 基板処理方法および基板処理装置
PCT/JP2018/037581 WO2019097901A1 (ja) 2017-11-15 2018-10-09 基板処理方法および基板処理装置
CN201880073324.4A CN111344839B (zh) 2017-11-15 2018-10-09 衬底处理方法及衬底处理装置
KR1020207013563A KR102483802B1 (ko) 2017-11-15 2018-10-09 기판 처리 방법 및 기판 처리 장치
TW107137207A TWI701086B (zh) 2017-11-15 2018-10-22 基板處理方法及基板處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017220075A JP6917868B2 (ja) 2017-11-15 2017-11-15 基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2019091815A JP2019091815A (ja) 2019-06-13
JP2019091815A5 JP2019091815A5 (https=) 2020-12-10
JP6917868B2 true JP6917868B2 (ja) 2021-08-11

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JP2017220075A Active JP6917868B2 (ja) 2017-11-15 2017-11-15 基板処理方法および基板処理装置

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Country Link
JP (1) JP6917868B2 (https=)
KR (1) KR102483802B1 (https=)
CN (1) CN111344839B (https=)
TW (1) TWI701086B (https=)
WO (1) WO2019097901A1 (https=)

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* Cited by examiner, † Cited by third party
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JP6952860B2 (ja) * 2019-03-29 2021-10-27 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP6843173B2 (ja) * 2019-03-29 2021-03-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP7467051B2 (ja) * 2019-09-13 2024-04-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、及び、半導体製造方法
JP7312656B2 (ja) * 2019-09-24 2023-07-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7433135B2 (ja) * 2020-05-25 2024-02-19 東京エレクトロン株式会社 貯留装置および貯留方法
TWI878533B (zh) * 2020-05-25 2025-04-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR102670179B1 (ko) * 2020-09-09 2024-05-28 가부시키가이샤 스크린 홀딩스 기판 처리 방법, 및 기판 처리 장치
JP7570238B2 (ja) 2021-01-12 2024-10-21 東京エレクトロン株式会社 処理液供給システム
JP7628450B2 (ja) * 2021-03-24 2025-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および配管着脱パーツ洗浄方法
JP2022176662A (ja) * 2021-05-17 2022-11-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、及び基板処理装置
JP7364641B2 (ja) * 2021-10-27 2023-10-18 三益半導体工業株式会社 スピンエッチング装置用ポンプフィルターの再生システム及び再生方法
KR102449897B1 (ko) 2022-01-14 2022-09-30 삼성전자주식회사 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법.
JP7630458B2 (ja) * 2022-03-10 2025-02-17 芝浦メカトロニクス株式会社 処理液供給装置、基板処理装置及び処理液供給方法
KR20230157596A (ko) 2022-05-10 2023-11-17 세메스 주식회사 기판처리장치 및 기판처리방법
KR102777609B1 (ko) * 2022-11-03 2025-03-12 주식회사 제우스 기판 식각 방법 및 기판 식각 장치
CN116230587A (zh) * 2022-12-26 2023-06-06 沈阳芯源微电子设备股份有限公司 一种湿处理流体回收装置
WO2025028253A1 (ja) * 2023-07-31 2025-02-06 東京エレクトロン株式会社 基板処理方法及び基板処理システム
WO2025028254A1 (ja) * 2023-07-31 2025-02-06 東京エレクトロン株式会社 基板処理方法及び基板処理システム
US20260021459A1 (en) 2024-07-16 2026-01-22 Tokyo Ohka Kogyo Co., Ltd. Substrate processing device, liquid supply device, and substrate processing method

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JPH09129588A (ja) * 1995-10-31 1997-05-16 Fujitsu Ltd エッチング液の濃度管理方法及びエッチング装置
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
JPH11300190A (ja) * 1998-04-27 1999-11-02 Sony Corp 半導体製造用薬液調合装置
JP3788985B2 (ja) * 2002-09-17 2006-06-21 エム・エフエスアイ株式会社 エッチング液の再生方法、エッチング方法およびエッチング装置
US8409997B2 (en) * 2007-01-25 2013-04-02 Taiwan Semiconductor Maufacturing Co., Ltd. Apparatus and method for controlling silicon nitride etching tank
US7910014B2 (en) * 2007-09-28 2011-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for improving wet chemical bath process stability and productivity in semiconductor manufacturing
JP5931484B2 (ja) * 2012-02-13 2016-06-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP6324775B2 (ja) 2014-03-17 2018-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理装置を用いた基板処理方法
TWI630652B (zh) * 2014-03-17 2018-07-21 SCREEN Holdings Co., Ltd. 基板處理裝置及使用基板處理裝置之基板處理方法
KR101671118B1 (ko) * 2014-07-29 2016-10-31 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6320869B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6320868B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6499414B2 (ja) * 2014-09-30 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN108140572B (zh) * 2015-09-30 2022-12-30 芝浦机械电子株式会社 基板处理装置及基板处理方法

Also Published As

Publication number Publication date
KR102483802B1 (ko) 2022-12-30
CN111344839B (zh) 2024-11-15
JP2019091815A (ja) 2019-06-13
TWI701086B (zh) 2020-08-11
WO2019097901A1 (ja) 2019-05-23
KR20200062327A (ko) 2020-06-03
TW201936274A (zh) 2019-09-16
CN111344839A (zh) 2020-06-26

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