CN111344839B - 衬底处理方法及衬底处理装置 - Google Patents
衬底处理方法及衬底处理装置 Download PDFInfo
- Publication number
- CN111344839B CN111344839B CN201880073324.4A CN201880073324A CN111344839B CN 111344839 B CN111344839 B CN 111344839B CN 201880073324 A CN201880073324 A CN 201880073324A CN 111344839 B CN111344839 B CN 111344839B
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- China
- Prior art keywords
- phosphoric acid
- aqueous solution
- acid aqueous
- tank
- substrate
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
- H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-220075 | 2017-11-15 | ||
| JP2017220075A JP6917868B2 (ja) | 2017-11-15 | 2017-11-15 | 基板処理方法および基板処理装置 |
| PCT/JP2018/037581 WO2019097901A1 (ja) | 2017-11-15 | 2018-10-09 | 基板処理方法および基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111344839A CN111344839A (zh) | 2020-06-26 |
| CN111344839B true CN111344839B (zh) | 2024-11-15 |
Family
ID=66539458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880073324.4A Active CN111344839B (zh) | 2017-11-15 | 2018-10-09 | 衬底处理方法及衬底处理装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6917868B2 (https=) |
| KR (1) | KR102483802B1 (https=) |
| CN (1) | CN111344839B (https=) |
| TW (1) | TWI701086B (https=) |
| WO (1) | WO2019097901A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6952860B2 (ja) * | 2019-03-29 | 2021-10-27 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| JP6843173B2 (ja) * | 2019-03-29 | 2021-03-17 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| JP7467051B2 (ja) * | 2019-09-13 | 2024-04-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、基板処理方法、及び、半導体製造方法 |
| JP7312656B2 (ja) * | 2019-09-24 | 2023-07-21 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP7433135B2 (ja) * | 2020-05-25 | 2024-02-19 | 東京エレクトロン株式会社 | 貯留装置および貯留方法 |
| TWI878533B (zh) * | 2020-05-25 | 2025-04-01 | 日商東京威力科創股份有限公司 | 基板處理裝置及基板處理方法 |
| KR102670179B1 (ko) * | 2020-09-09 | 2024-05-28 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법, 및 기판 처리 장치 |
| JP7570238B2 (ja) | 2021-01-12 | 2024-10-21 | 東京エレクトロン株式会社 | 処理液供給システム |
| JP7628450B2 (ja) * | 2021-03-24 | 2025-02-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および配管着脱パーツ洗浄方法 |
| JP2022176662A (ja) * | 2021-05-17 | 2022-11-30 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、及び基板処理装置 |
| JP7364641B2 (ja) * | 2021-10-27 | 2023-10-18 | 三益半導体工業株式会社 | スピンエッチング装置用ポンプフィルターの再生システム及び再生方法 |
| KR102449897B1 (ko) | 2022-01-14 | 2022-09-30 | 삼성전자주식회사 | 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법. |
| JP7630458B2 (ja) * | 2022-03-10 | 2025-02-17 | 芝浦メカトロニクス株式会社 | 処理液供給装置、基板処理装置及び処理液供給方法 |
| KR20230157596A (ko) | 2022-05-10 | 2023-11-17 | 세메스 주식회사 | 기판처리장치 및 기판처리방법 |
| KR102777609B1 (ko) * | 2022-11-03 | 2025-03-12 | 주식회사 제우스 | 기판 식각 방법 및 기판 식각 장치 |
| CN116230587A (zh) * | 2022-12-26 | 2023-06-06 | 沈阳芯源微电子设备股份有限公司 | 一种湿处理流体回收装置 |
| WO2025028253A1 (ja) * | 2023-07-31 | 2025-02-06 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
| WO2025028254A1 (ja) * | 2023-07-31 | 2025-02-06 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
| US20260021459A1 (en) | 2024-07-16 | 2026-01-22 | Tokyo Ohka Kogyo Co., Ltd. | Substrate processing device, liquid supply device, and substrate processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11300190A (ja) * | 1998-04-27 | 1999-11-02 | Sony Corp | 半導体製造用薬液調合装置 |
| JP2013165217A (ja) * | 2012-02-13 | 2013-08-22 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2016032029A (ja) * | 2014-07-29 | 2016-03-07 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129588A (ja) * | 1995-10-31 | 1997-05-16 | Fujitsu Ltd | エッチング液の濃度管理方法及びエッチング装置 |
| JPH09275091A (ja) * | 1996-04-03 | 1997-10-21 | Mitsubishi Electric Corp | 半導体窒化膜エッチング装置 |
| JP3788985B2 (ja) * | 2002-09-17 | 2006-06-21 | エム・エフエスアイ株式会社 | エッチング液の再生方法、エッチング方法およびエッチング装置 |
| US8409997B2 (en) * | 2007-01-25 | 2013-04-02 | Taiwan Semiconductor Maufacturing Co., Ltd. | Apparatus and method for controlling silicon nitride etching tank |
| US7910014B2 (en) * | 2007-09-28 | 2011-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for improving wet chemical bath process stability and productivity in semiconductor manufacturing |
| JP6502633B2 (ja) * | 2013-09-30 | 2019-04-17 | 芝浦メカトロニクス株式会社 | 基板処理方法及び基板処理装置 |
| JP6324775B2 (ja) | 2014-03-17 | 2018-05-16 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理装置を用いた基板処理方法 |
| TWI630652B (zh) * | 2014-03-17 | 2018-07-21 | SCREEN Holdings Co., Ltd. | 基板處理裝置及使用基板處理裝置之基板處理方法 |
| KR101671118B1 (ko) * | 2014-07-29 | 2016-10-31 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| JP6320869B2 (ja) * | 2014-07-29 | 2018-05-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP6499414B2 (ja) * | 2014-09-30 | 2019-04-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| CN108140572B (zh) * | 2015-09-30 | 2022-12-30 | 芝浦机械电子株式会社 | 基板处理装置及基板处理方法 |
-
2017
- 2017-11-15 JP JP2017220075A patent/JP6917868B2/ja active Active
-
2018
- 2018-10-09 WO PCT/JP2018/037581 patent/WO2019097901A1/ja not_active Ceased
- 2018-10-09 KR KR1020207013563A patent/KR102483802B1/ko active Active
- 2018-10-09 CN CN201880073324.4A patent/CN111344839B/zh active Active
- 2018-10-22 TW TW107137207A patent/TWI701086B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11300190A (ja) * | 1998-04-27 | 1999-11-02 | Sony Corp | 半導体製造用薬液調合装置 |
| JP2013165217A (ja) * | 2012-02-13 | 2013-08-22 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| JP2016032029A (ja) * | 2014-07-29 | 2016-03-07 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102483802B1 (ko) | 2022-12-30 |
| JP2019091815A (ja) | 2019-06-13 |
| TWI701086B (zh) | 2020-08-11 |
| WO2019097901A1 (ja) | 2019-05-23 |
| KR20200062327A (ko) | 2020-06-03 |
| JP6917868B2 (ja) | 2021-08-11 |
| TW201936274A (zh) | 2019-09-16 |
| CN111344839A (zh) | 2020-06-26 |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |