JP6914143B2 - 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法 - Google Patents
基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法 Download PDFInfo
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- JP6914143B2 JP6914143B2 JP2017152499A JP2017152499A JP6914143B2 JP 6914143 B2 JP6914143 B2 JP 6914143B2 JP 2017152499 A JP2017152499 A JP 2017152499A JP 2017152499 A JP2017152499 A JP 2017152499A JP 6914143 B2 JP6914143 B2 JP 6914143B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 193
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 141
- 229910017604 nitric acid Inorganic materials 0.000 claims description 141
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 109
- 229910052796 boron Inorganic materials 0.000 claims description 109
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
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- 230000007423 decrease Effects 0.000 claims description 12
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- 229910052710 silicon Inorganic materials 0.000 claims description 9
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- 235000011114 ammonium hydroxide Nutrition 0.000 description 46
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- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 26
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- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 5
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- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- -1 nitronium ions Chemical class 0.000 description 1
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- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 239000012466 permeate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 235000011149 sulphuric acid Nutrition 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106143495A TWI734876B (zh) | 2016-12-26 | 2017-12-12 | 基板處理方法、基板處理裝置、基板處理系統、基板處理系統的控制裝置、半導體基板的製造方法及半導體基板 |
| KR1020170171327A KR102456820B1 (ko) | 2016-12-26 | 2017-12-13 | 기판 처리 방법, 기판 처리 장치, 기판 처리 시스템, 기판 처리 시스템의 제어 장치, 반도체 기판의 제조 방법 및 반도체 기판 |
| US15/851,871 US10381233B2 (en) | 2016-12-26 | 2017-12-22 | Method and apparatus for substrate processing |
| CN201711435797.8A CN108242392B (zh) | 2016-12-26 | 2017-12-26 | 基板及其处理方法、装置、系统及控制装置、制造方法 |
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| JP2016251576 | 2016-12-26 | ||
| JP2016251576 | 2016-12-26 | ||
| JP2017077832 | 2017-04-10 | ||
| JP2017077832 | 2017-04-10 |
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| JP2018164067A JP2018164067A (ja) | 2018-10-18 |
| JP6914143B2 true JP6914143B2 (ja) | 2021-08-04 |
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| TW (1) | TWI734876B (zh) |
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| JP7418261B2 (ja) | 2020-03-26 | 2024-01-19 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP7426874B2 (ja) * | 2020-03-27 | 2024-02-02 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、および、基板処理方法 |
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| JP3832204B2 (ja) * | 2000-07-28 | 2006-10-11 | 株式会社Ｓｕｍｃｏ | シリコン基板中の微量不純物分析方法 |
| JP2004045264A (ja) * | 2002-07-12 | 2004-02-12 | Hitachi Ltd | 核燃料取扱施設及びその運転管理方法 |
| JP4961776B2 (ja) * | 2006-03-07 | 2012-06-27 | 株式会社Ｓｕｍｃｏ | パターン形成用マスクおよびその洗浄方法 |
| JP2008147303A (ja) * | 2006-12-07 | 2008-06-26 | Ses Co Ltd | 基板処理装置 |
| JP4906559B2 (ja) * | 2007-03-29 | 2012-03-28 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| US8337950B2 (en) * | 2007-06-19 | 2012-12-25 | Applied Materials, Inc. | Method for depositing boron-rich films for lithographic mask applications |
| KR20120003874A (ko) * | 2009-03-30 | 2012-01-11 | 도레이 카부시키가이샤 | 도전막 제거제 및 도전막 제거 방법 |
| JP5656010B2 (ja) * | 2009-12-04 | 2015-01-21 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | ハードマスク膜を形成する方法およびハードマスク膜を成膜する装置 |
| JP2012074601A (ja) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| JP2012129496A (ja) * | 2010-11-22 | 2012-07-05 | Tokyo Electron Ltd | 液処理方法、その液処理方法を実行させるためのプログラムを記録した記録媒体及び液処理装置 |
| JP2012204652A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 半導体装置の製造方法 |
| US9653327B2 (en) * | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
| JP5975563B2 (ja) * | 2012-03-30 | 2016-08-23 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| JP6242057B2 (ja) * | 2013-02-15 | 2017-12-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP6228800B2 (ja) * | 2013-09-30 | 2017-11-08 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP6331189B2 (ja) * | 2014-03-07 | 2018-05-30 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| US9852923B2 (en) * | 2015-04-02 | 2017-12-26 | Applied Materials, Inc. | Mask etch for patterning |
| JP6279037B2 (ja) * | 2016-08-30 | 2018-02-14 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄システム |
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- 2017-08-07 JP JP2017152499A patent/JP6914143B2/ja active Active
- 2017-12-12 TW TW106143495A patent/TWI734876B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018164067A (ja) | 2018-10-18 |
| TWI734876B (zh) | 2021-08-01 |
| TW201841209A (zh) | 2018-11-16 |
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