JP6895126B2 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
- Publication number
- JP6895126B2 JP6895126B2 JP2018060114A JP2018060114A JP6895126B2 JP 6895126 B2 JP6895126 B2 JP 6895126B2 JP 2018060114 A JP2018060114 A JP 2018060114A JP 2018060114 A JP2018060114 A JP 2018060114A JP 6895126 B2 JP6895126 B2 JP 6895126B2
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- Prior art keywords
- sealing resin
- semiconductor package
- package according
- lid
- internal wiring
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48229—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10254—Diamond [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Fuses (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018060114A JP6895126B2 (ja) | 2018-03-27 | 2018-03-27 | 半導体パッケージ |
| US16/188,772 US10593605B2 (en) | 2018-03-27 | 2018-11-13 | Semiconductor package |
| DE102019201158.6A DE102019201158B4 (de) | 2018-03-27 | 2019-01-30 | Halbleiterbaugruppe |
| CN201910221792.8A CN110310930B (zh) | 2018-03-27 | 2019-03-22 | 半导体封装件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018060114A JP6895126B2 (ja) | 2018-03-27 | 2018-03-27 | 半導体パッケージ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019175923A JP2019175923A (ja) | 2019-10-10 |
| JP2019175923A5 JP2019175923A5 (enExample) | 2020-08-20 |
| JP6895126B2 true JP6895126B2 (ja) | 2021-06-30 |
Family
ID=67910315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018060114A Active JP6895126B2 (ja) | 2018-03-27 | 2018-03-27 | 半導体パッケージ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10593605B2 (enExample) |
| JP (1) | JP6895126B2 (enExample) |
| CN (1) | CN110310930B (enExample) |
| DE (1) | DE102019201158B4 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11527456B2 (en) * | 2019-10-31 | 2022-12-13 | Ut-Battelle, Llc | Power module with organic layers |
| JP7209615B2 (ja) * | 2019-11-13 | 2023-01-20 | 三菱電機株式会社 | 半導体装置 |
| WO2021195871A1 (zh) * | 2020-03-30 | 2021-10-07 | 华为技术有限公司 | 埋入式基板、电路板组件及电子设备 |
| JP7735655B2 (ja) * | 2020-10-15 | 2025-09-09 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233953A (ja) * | 1988-07-22 | 1990-02-05 | Mitsubishi Electric Corp | 半導体装置 |
| JP3506733B2 (ja) * | 1993-07-09 | 2004-03-15 | ローム株式会社 | 安全ヒューズ付き面実装型電子部品の構造 |
| JP3019679B2 (ja) * | 1993-09-08 | 2000-03-13 | 富士電機株式会社 | 半導体装置の内部配線構造 |
| US5744860A (en) | 1996-02-06 | 1998-04-28 | Asea Brown Boveri Ag | Power semiconductor module |
| JPH1012806A (ja) * | 1996-06-24 | 1998-01-16 | Toshiba Corp | 半導体装置 |
| DE19639279C2 (de) * | 1996-09-25 | 2002-01-17 | Daimlerchrysler Rail Systems | Stromrichterschaltung |
| JP2000138107A (ja) | 1998-11-04 | 2000-05-16 | Mitsubishi Materials Corp | 半導体サージ吸収素子 |
| JP3778268B2 (ja) * | 2001-03-21 | 2006-05-24 | オムロン株式会社 | 過電流遮断構造の製造方法 |
| JP4615289B2 (ja) * | 2004-11-12 | 2011-01-19 | 三菱電機株式会社 | 半導体装置 |
| US20070075822A1 (en) * | 2005-10-03 | 2007-04-05 | Littlefuse, Inc. | Fuse with cavity forming enclosure |
| JP2008235502A (ja) * | 2007-03-20 | 2008-10-02 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
| CN104112730A (zh) * | 2013-06-09 | 2014-10-22 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
| JP6916997B2 (ja) * | 2016-03-17 | 2021-08-11 | 富士電機株式会社 | 半導体装置 |
| JP6627698B2 (ja) * | 2016-09-13 | 2020-01-08 | 三菱電機株式会社 | 半導体装置 |
| JP2018060114A (ja) | 2016-10-07 | 2018-04-12 | キヤノン株式会社 | 投影型表示装置 |
| US9865537B1 (en) * | 2016-12-30 | 2018-01-09 | Texas Instruments Incorporated | Methods and apparatus for integrated circuit failsafe fuse package with arc arrest |
-
2018
- 2018-03-27 JP JP2018060114A patent/JP6895126B2/ja active Active
- 2018-11-13 US US16/188,772 patent/US10593605B2/en active Active
-
2019
- 2019-01-30 DE DE102019201158.6A patent/DE102019201158B4/de active Active
- 2019-03-22 CN CN201910221792.8A patent/CN110310930B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20190304859A1 (en) | 2019-10-03 |
| DE102019201158B4 (de) | 2022-01-27 |
| DE102019201158A1 (de) | 2019-10-02 |
| CN110310930B (zh) | 2023-06-30 |
| US10593605B2 (en) | 2020-03-17 |
| CN110310930A (zh) | 2019-10-08 |
| JP2019175923A (ja) | 2019-10-10 |
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| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |