JP6895126B2 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
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- JP6895126B2 JP6895126B2 JP2018060114A JP2018060114A JP6895126B2 JP 6895126 B2 JP6895126 B2 JP 6895126B2 JP 2018060114 A JP2018060114 A JP 2018060114A JP 2018060114 A JP2018060114 A JP 2018060114A JP 6895126 B2 JP6895126 B2 JP 6895126B2
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- 239000004065 semiconductor Substances 0.000 title claims description 54
- 229920005989 resin Polymers 0.000 claims description 44
- 239000011347 resin Substances 0.000 claims description 44
- 238000007789 sealing Methods 0.000 claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 26
- 230000002265 prevention Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 7
- 230000002411 adverse Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Description
図1は、実施の形態1に係る半導体パッケージを示す断面図である。絶縁基板1の上面に回路パターン2が設けられ、下面に放熱パターン3が設けられている。絶縁基板1は樹脂からなり、回路パターン2及び放熱パターン3は銅からなる。回路パターン2の上に半導体素子4が設けられている。
図2は、実施の形態2に係る半導体パッケージを示す断面図である。拡散防止部12は、蓋9の平板部分の下面に設けられた筒状部である。この筒状部の内部に封止樹脂8が回り込まないようにすることで、空隙11を容易に確保することができる。また、封止樹脂8の上面よりも下に拡散防止部12を設けることができるため、半導体パッケージの小型化に貢献できる。さらに、蓋9と封止樹脂8の接触面積が増加するため、硬化接着が強固となり、より効果的に飛沫の拡散を防止することができる。
図3は、実施の形態3に係る半導体パッケージを示す断面図である。外部端子6の内部配線7との接合面が、封止樹脂8の上面より上に配置され、封止樹脂8から露出している。これにより、溶断部10を封止樹脂8から容易に露出させることができる。この結果、溶断部10の破壊エネルギーを小さくできるため、より効果的に飛沫の拡散を防止することができる。
Claims (9)
- 回路パターンを有する絶縁基板と、
前記回路パターンの上に設けられた半導体素子と、
前記絶縁基板の上で前記半導体素子を囲むケースと、
前記ケースの内側と外側を電気的に接続する外部端子と、
前記回路パターン又は前記半導体素子と前記外部端子の内端部とを電気的に接続する内部配線と、
前記ケースの内側で前記半導体素子及び前記内部配線を封止する封止樹脂と、
前記封止樹脂の上面を覆う蓋とを備え、
前記内部配線は、過電流により溶断する溶断部を有し、
前記蓋は、前記封止樹脂の前記上面との間に空隙を確保しつつ前記溶断部の上方を覆う拡散防止部を有し、前記拡散防止部以外で前記封止樹脂の前記上面に密着固定されていることを特徴とする半導体パッケージ。 - 前記溶断部は前記封止樹脂に埋没しており、
前記溶断部の上の前記封止樹脂の厚みは前記溶断部の径の4倍よりも小さいことを特徴とする請求項1に記載の半導体パッケージ。 - 前記溶断部は前記封止樹脂から露出していることを特徴とする請求項1に記載の半導体パッケージ。
- 前記拡散防止部は、前記蓋の一部を上方に突出させた屈曲部であることを特徴とする請求項1〜3の何れか1項に記載の半導体パッケージ。
- 前記拡散防止部は、前記蓋の下面に設けられた筒状部であることを特徴とする請求項1〜3の何れか1項に記載の半導体パッケージ。
- 前記外部端子の前記内部配線との接合面が、前記封止樹脂の前記上面より上に配置され、前記封止樹脂から露出していることを特徴とする請求項3に記載の半導体パッケージ。
- 前記内部配線はボンディングワイヤであることを特徴とする請求項1〜6の何れか1項に記載の半導体パッケージ。
- 前記封止樹脂はエポキシ系樹脂と無機剤のフィラーを有することを特徴とする請求項1〜7の何れか1項に記載の半導体パッケージ。
- 前記半導体素子はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜8の何れか1項に記載の半導体パッケージ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018060114A JP6895126B2 (ja) | 2018-03-27 | 2018-03-27 | 半導体パッケージ |
US16/188,772 US10593605B2 (en) | 2018-03-27 | 2018-11-13 | Semiconductor package |
DE102019201158.6A DE102019201158B4 (de) | 2018-03-27 | 2019-01-30 | Halbleiterbaugruppe |
CN201910221792.8A CN110310930B (zh) | 2018-03-27 | 2019-03-22 | 半导体封装件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018060114A JP6895126B2 (ja) | 2018-03-27 | 2018-03-27 | 半導体パッケージ |
Publications (3)
Publication Number | Publication Date |
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JP2019175923A JP2019175923A (ja) | 2019-10-10 |
JP2019175923A5 JP2019175923A5 (ja) | 2020-08-20 |
JP6895126B2 true JP6895126B2 (ja) | 2021-06-30 |
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JPH0233953A (ja) * | 1988-07-22 | 1990-02-05 | Mitsubishi Electric Corp | 半導体装置 |
JP3506733B2 (ja) * | 1993-07-09 | 2004-03-15 | ローム株式会社 | 安全ヒューズ付き面実装型電子部品の構造 |
JP3019679B2 (ja) * | 1993-09-08 | 2000-03-13 | 富士電機株式会社 | 半導体装置の内部配線構造 |
US5744860A (en) | 1996-02-06 | 1998-04-28 | Asea Brown Boveri Ag | Power semiconductor module |
JPH1012806A (ja) * | 1996-06-24 | 1998-01-16 | Toshiba Corp | 半導体装置 |
DE19639279C2 (de) | 1996-09-25 | 2002-01-17 | Daimlerchrysler Rail Systems | Stromrichterschaltung |
JP2000138107A (ja) | 1998-11-04 | 2000-05-16 | Mitsubishi Materials Corp | 半導体サージ吸収素子 |
JP3778268B2 (ja) * | 2001-03-21 | 2006-05-24 | オムロン株式会社 | 過電流遮断構造の製造方法 |
JP4615289B2 (ja) * | 2004-11-12 | 2011-01-19 | 三菱電機株式会社 | 半導体装置 |
CN101313382A (zh) * | 2005-10-03 | 2008-11-26 | 保险丝公司 | 具有空腔形成外壳的熔丝 |
JP2008235502A (ja) * | 2007-03-20 | 2008-10-02 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
CN104112730A (zh) * | 2013-06-09 | 2014-10-22 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法 |
JP6916997B2 (ja) * | 2016-03-17 | 2021-08-11 | 富士電機株式会社 | 半導体装置 |
JP6627698B2 (ja) * | 2016-09-13 | 2020-01-08 | 三菱電機株式会社 | 半導体装置 |
JP2018060114A (ja) | 2016-10-07 | 2018-04-12 | キヤノン株式会社 | 投影型表示装置 |
US9865537B1 (en) * | 2016-12-30 | 2018-01-09 | Texas Instruments Incorporated | Methods and apparatus for integrated circuit failsafe fuse package with arc arrest |
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