CN110310930A - 半导体封装件 - Google Patents

半导体封装件 Download PDF

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CN110310930A
CN110310930A CN201910221792.8A CN201910221792A CN110310930A CN 110310930 A CN110310930 A CN 110310930A CN 201910221792 A CN201910221792 A CN 201910221792A CN 110310930 A CN110310930 A CN 110310930A
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potting resin
semiconductor package
fuse
package part
internal wirings
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CN110310930B (zh
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大坪义贵
安藤正之
大原孝太
小田敬雅
森琢郎
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Mitsubishi Corp
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Mitsubishi Corp
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Abstract

得到制造容易且能够防止飞沫的扩散而不使散热性变差的半导体封装件。绝缘基板(1)具有电路图案(2)。在电路图案之上设置有半导体元件(4)。壳体(5)在绝缘基板之上将半导体元件包围。外部端子(6)将壳体的内侧与外侧电连接。内部配线(7)将电路图案或者半导体元件与外部端子的内端部电连接。封装树脂(8)在壳体的内侧将半导体元件以及内部配线封装。盖(9)覆盖封装树脂的上表面。内部配线具有由于过电流而熔断的熔断部(10)。盖(9)具有防扩散部(12)，防扩散部在其与封装树脂(8)的上表面之间确保空隙(11)，并且覆盖熔断部(10)的上方，该盖(9)除了防扩散部(12)以外密接固定于封装树脂(8)的上表面。

Description

半导体封装件
技术领域
本发明涉及半导体封装件。
背景技术
半导体封装件用于从发电、送电到高效的能源利用、再生的各种情况。就通过环氧类或者聚酰亚胺类的封装树脂来封装的半导体封装件而言，为了在发生过电流或者短路电流时进行保护，逐渐将导线等内部配线用作熔断器。但是，在导线熔断时，导线的一部分有时与周围的模塑树脂一起被吹飞而使飞沫扩散至半导体封装件周边，给其它器件带来不良影响。为了防止这一情况，提出了对半导体封装件的外周整体通过橡胶膜形成涂层的技术(例如，参照专利文献1)。
专利文献1：日本特开2000-138107号公报
但是，如果半导体封装件的形状复杂，则难以对外周整体通过橡胶膜形成涂层。另外，存在如下问题，即，由于通过导热性差的橡胶膜进行覆盖，因而正常使用时的散热性变差。
发明内容
本发明就是为了解决上述这样的课题而提出的，其目的在于得到制造容易且能够防止飞沫的扩散而不使散热性变差的半导体封装件。
本发明涉及的半导体封装件的特征在于，具有：绝缘基板，其具有电路图案；半导体元件，其设置于所述电路图案之上；壳体，其在所述绝缘基板之上将所述半导体元件包围；外部端子，其将所述壳体的内侧与外侧电连接；内部配线，其将所述电路图案或者所述半导体元件与所述外部端子的内端部电连接；封装树脂，其在所述壳体的内侧将所述半导体元件以及所述内部配线封装；以及盖，其覆盖所述封装树脂的上表面，所述内部配线具有由于过电流而熔断的熔断部，所述盖具有防扩散部，该防扩散部在其与所述封装树脂的所述上表面之间确保空隙，并且覆盖所述熔断部的上方，所述盖除了所述防扩散部以外密接固定于所述封装树脂的所述上表面。
发明的效果
在本发明中，有意地在内部配线设置在流过过电流时熔断的熔断部。通过使熔断部的破坏能量从封装件上表面释放出，从而能够使电流路径在短时间实现断线。另外，盖具有防扩散部，该防扩散部在其与封装树脂的上表面之间确保空隙，并且覆盖熔断部的上方，该盖除了防扩散部以外密接固定于封装树脂的上表面。由此，能够防止飞沫的扩散，能够抑制给其它器件带来的不良影响。另外，由于仅仅是在盖设置防扩散部，因而制造容易，不会使散热性变差。
附图说明
图1是表示实施方式1涉及的半导体封装件的剖面图。
图2是表示实施方式2涉及的半导体封装件的剖面图。
图3是表示实施方式3涉及的半导体封装件的剖面图。
标号的说明
1绝缘基板，2电路图案，4半导体元件，5壳体，6外部端子，7内部配线，8封装树脂，9盖，10熔断部，11空隙，12防扩散部。
具体实施方式
参照附图对实施方式涉及的半导体封装件进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示实施方式1涉及的半导体封装件的剖面图。在绝缘基板1的上表面设置有电路图案2，在下表面设置有散热图案3。绝缘基板1由树脂构成，电路图案2以及散热图案3由铜构成。在电路图案2之上设置有半导体元件4。
壳体5在绝缘基板1之上将半导体元件4包围。外部端子6设置于壳体5，将壳体5的内侧与外侧电连接。内部配线7将电路图案2或者半导体元件4与外部端子6的内端部电连接。封装树脂8在壳体5的内侧将半导体元件4以及内部配线7封装。盖9覆盖封装树脂8的上表面。
内部配线7在封装树脂8的上表面附近具有由于过电流而熔断的熔断部10。此外，熔断部10熔断的电流值比半导体元件4的浪涌电流耐量小。盖9具有防扩散部12，该防扩散部12在其与封装树脂8的上表面之间确保空隙11，并且覆盖熔断部10的上方，该盖9除了防扩散部12以外密接固定于封装树脂8的上表面。
在本实施方式中，有意地在内部配线7设置有在流过过电流时熔断的熔断部10。通过将熔断部10的破坏能量从封装件上表面释放出，从而能够使电流路径在短时间实现断线。另外，盖9具有防扩散部12，该防扩散部12在其与封装树脂8的上表面之间确保空隙11，并且覆盖熔断部10的上方，该盖9除了防扩散部12以外密接固定于封装树脂8的上表面。由此，能够防止飞沫的扩散，能够抑制给其它器件带来的不良影响。另外，由于仅仅是在盖9设置防扩散部12，因而制造容易，不会使散热性变差。
另外，熔断部10埋没于封装树脂8。熔断部10之上的封装树脂8的厚度a比熔断部b的直径的4倍小(a＜4b)。由此，能够控制熔断部10的熔断特性，能够将熔断部10的破坏能量限定在封装树脂8的上表面侧。
另外，防扩散部12是使盖9的一部分向上方凸出得到的“コ”字状的弯折部。能够容易地只在熔断部10设置空隙11。并且，通过除了防扩散部12以外使盖9的下表面平坦，从而能够容易地实现与封装树脂8之间的密接性。
另外，内部配线7具体地说是键合导线。通过与封装件内的其它导线相比减小内部配线7的导线直径或者减少根数，从而内部配线7与其它导线相比变得易于熔断。因此，能够通过调整内部配线7的导线直径或者根数，从而容易地设置由于过电流而熔断的熔断部10。另外，设置有熔断部10的内部配线7与封装件内的其它导线相比高度高。因此，熔断部10之上的封装树脂8的厚度a变小。
另外，封装树脂8例如具有环氧类树脂和无机填料。因此，封装树脂8是高导热的，所以即使由盖9覆盖封装树脂8的上表面，在正常使用时也能够从散热图案3侧散热。另外，如上述所示即使在封装树脂8是硬质的情况下，也能够防止飞沫的扩散。
实施方式2.
图2是表示实施方式2涉及的半导体封装件的剖面图。防扩散部12是在盖9的平板部分的下表面设置的筒状部。通过使得封装树脂8不会绕入至该筒状部的内部，从而能够容易地确保空隙11。另外，由于能够将防扩散部12设置为比封装树脂8的上表面靠下，因此能够有利于半导体封装件的小型化。并且，由于盖9与封装树脂8的接触面积增加，因此固化粘接变得牢固，能够更有效地防止飞沫的扩散。
另外，熔断部10从封装树脂8露出。由此，能够使熔断部10的熔断特性稳定化。另外，由于能够将熔断部10的破坏能量减小，因此能够更有效地防止飞沫的扩散。
实施方式3.
图3是表示实施方式3涉及的半导体封装件的剖面图。外部端子6的与内部配线7之间的接合面设置为比封装树脂8的上表面靠上，从封装树脂8露出。由此，能够使熔断部10容易地从封装树脂8露出。其结果，能够将熔断部10的破坏能量减小，因此能够更有效地防止飞沫的扩散。
此外，半导体元件4不限于由硅形成，也可以由与硅相比带隙更大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料或者金刚石。对于由上述这样的宽带隙半导体形成的半导体芯片而言，由于耐电压性、容许电流密度高，因此能够小型化。通过使用该实现了小型化的半导体芯片，从而组装有该半导体芯片的半导体封装件也能够实现小型化、高集成化。另外，由于半导体芯片的耐热性高，因此能够使散热器的散热鳍片小型化，能够将水冷部空冷化，因而能够进一步将半导体封装件小型化。另外，由于半导体芯片的电力损耗低且高效，因此能够使半导体封装件高效化。

Claims (9)

1.一种半导体封装件，其特征在于，具有：
绝缘基板，其具有电路图案；
半导体元件，其设置于所述电路图案之上；
壳体，其在所述绝缘基板之上将所述半导体元件包围；
外部端子，其将所述壳体的内侧与外侧电连接；
内部配线，其将所述电路图案或者所述半导体元件与所述外部端子的内端部电连接；
封装树脂，其在所述壳体的内侧将所述半导体元件以及所述内部配线封装；以及
盖，其覆盖所述封装树脂的上表面，
所述内部配线具有由于过电流而熔断的熔断部，
所述盖具有防扩散部，该防扩散部在其与所述封装树脂的所述上表面之间确保空隙，并且覆盖所述熔断部的上方，所述盖除了所述防扩散部以外密接固定于所述封装树脂的所述上表面。
2.根据权利要求1所述的半导体封装件，其特征在于，
所述熔断部埋没于所述封装树脂，
所述熔断部之上的所述封装树脂的厚度比所述熔断部的直径的4倍小。
3.根据权利要求1所述的半导体封装件，其特征在于，
所述熔断部从所述封装树脂露出。
4.根据权利要求1至3中任一项所述的半导体封装件，其特征在于，
所述防扩散部是使所述盖的一部分向上方凸出得到的弯折部。
5.根据权利要求1至3中任一项所述的半导体封装件，其特征在于，
所述防扩散部是在所述盖的下表面设置的筒状部。
6.根据权利要求3所述的半导体封装件，其特征在于，
所述外部端子的与所述内部配线之间的接合面配置为比所述封装树脂的所述上表面靠上，从所述封装树脂露出。
7.根据权利要求1至6中任一项所述的半导体封装件，其特征在于，
所述内部配线是键合导线。
8.根据权利要求1至7中任一项所述的半导体封装件，其特征在于，
所述封装树脂具有环氧类树脂和无机填料。
9.根据权利要求1至8中任一项所述的半导体封装件，其特征在于，
所述半导体元件由宽带隙半导体形成。
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