JP6886928B2 - 真空対応式led基板ヒータ - Google Patents

真空対応式led基板ヒータ Download PDF

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JP6886928B2
JP6886928B2 JP2017567324A JP2017567324A JP6886928B2 JP 6886928 B2 JP6886928 B2 JP 6886928B2 JP 2017567324 A JP2017567324 A JP 2017567324A JP 2017567324 A JP2017567324 A JP 2017567324A JP 6886928 B2 JP6886928 B2 JP 6886928B2
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Prior art keywords
leds
recess
led
pattern
led substrate
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Japanese (ja)
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JP2018523305A5 (https=
JP2018523305A (ja
Inventor
ブレント ヴォパット ロバート
ブレント ヴォパット ロバート
イー ワイカ ゲイリー
イー ワイカ ゲイリー
ブラーニック デイビッド
ブラーニック デイビッド
エム シャーラー ジェイソン
エム シャーラー ジェイソン
ティー ウィーバー ウィリアム
ティー ウィーバー ウィリアム
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/0033Heating devices using lamps
    • H05B3/0038Heating devices using lamps for industrial applications
    • H05B3/0047Heating devices using lamps for industrial applications for semiconductor manufacture
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2017567324A 2015-06-29 2016-06-24 真空対応式led基板ヒータ Active JP6886928B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/753,991 2015-06-29
US14/753,991 US20160379854A1 (en) 2015-06-29 2015-06-29 Vacuum Compatible LED Substrate Heater
PCT/US2016/039262 WO2017003866A1 (en) 2015-06-29 2016-06-24 Vacuum compatible led substrate heater

Publications (3)

Publication Number Publication Date
JP2018523305A JP2018523305A (ja) 2018-08-16
JP2018523305A5 JP2018523305A5 (https=) 2019-07-25
JP6886928B2 true JP6886928B2 (ja) 2021-06-16

Family

ID=57602729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017567324A Active JP6886928B2 (ja) 2015-06-29 2016-06-24 真空対応式led基板ヒータ

Country Status (6)

Country Link
US (1) US20160379854A1 (https=)
JP (1) JP6886928B2 (https=)
KR (1) KR102553101B1 (https=)
CN (1) CN107710395A (https=)
TW (1) TW201701428A (https=)
WO (1) WO2017003866A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 高圧高温下のアニールチャンバ
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 高圧処理システムのためのコンデンサシステム
FR3076431A1 (fr) * 2017-12-28 2019-07-05 Aeroform France Dispositif de chauffage sans contact
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
KR102078157B1 (ko) * 2018-04-16 2020-02-17 세메스 주식회사 기판 가열 유닛 및 이를 갖는 기판 처리 장치
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR101961864B1 (ko) 2018-08-17 2019-03-26 남윤종 폐엘이디 칩 분리 장치
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7077989B2 (ja) 2019-02-20 2022-05-31 株式会社デンソー 車両用空調ユニット
JP7198434B2 (ja) * 2019-03-27 2023-01-04 ウシオ電機株式会社 加熱処理方法及び光加熱装置
CN114026674B (zh) * 2019-06-24 2025-11-07 朗姆研究公司 衬底表面的蒸气清洁
KR102747715B1 (ko) * 2019-10-15 2024-12-31 주식회사 케이씨텍 복사 열원을 이용한 기판 처리 장치
JP7398935B2 (ja) * 2019-11-25 2023-12-15 東京エレクトロン株式会社 載置台、及び、検査装置
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
JP7677797B2 (ja) * 2021-01-07 2025-05-15 株式会社Screenホールディングス 熱処理装置および熱処理方法
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5937142A (en) * 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US6067931A (en) * 1996-11-04 2000-05-30 General Electric Company Thermal processor for semiconductor wafers
US6818864B2 (en) * 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
JP3776092B2 (ja) * 2003-03-25 2006-05-17 株式会社ルネサステクノロジ エッチング装置、エッチング方法および半導体装置の製造方法
US20070013057A1 (en) * 2003-05-05 2007-01-18 Joseph Mazzochette Multicolor LED assembly with improved color mixing
JP4442171B2 (ja) * 2003-09-24 2010-03-31 東京エレクトロン株式会社 熱処理装置
CA2605209C (en) * 2005-04-19 2013-10-22 Denki Kagaku Kogyo Kabushiki Kaisha Metal base circuit board, light-emitting diode and led light source unit
JP5055756B2 (ja) * 2005-09-21 2012-10-24 東京エレクトロン株式会社 熱処理装置及び記憶媒体
EP1965128B1 (en) * 2005-12-22 2016-08-17 Panasonic Intellectual Property Management Co., Ltd. Lighting apparatus with leds
KR100855065B1 (ko) * 2007-04-24 2008-08-29 삼성전기주식회사 발광 다이오드 패키지
TWI429731B (zh) * 2007-07-16 2014-03-11 路明納森公司 由4價錳離子活化之發紅光錯合氟化磷光體
JP5084420B2 (ja) * 2007-09-21 2012-11-28 東京エレクトロン株式会社 ロードロック装置および真空処理システム
JP2009099925A (ja) * 2007-09-27 2009-05-07 Tokyo Electron Ltd アニール装置
JP2010129861A (ja) * 2008-11-28 2010-06-10 Tokyo Electron Ltd 熱処理装置
KR20110039080A (ko) * 2009-10-09 2011-04-15 알티반도체 주식회사 백라이트 유닛 및 그 제조 방법
US20110217848A1 (en) * 2010-03-03 2011-09-08 Bergman Eric J Photoresist removing processor and methods
JP5526876B2 (ja) * 2010-03-09 2014-06-18 東京エレクトロン株式会社 加熱装置及びアニール装置
CN102214766A (zh) * 2010-04-02 2011-10-12 游森溢 发光二极管封装结构
JP2012023330A (ja) * 2010-06-14 2012-02-02 Tokyo Electron Ltd 加熱源装置及びアニール装置
US10211380B2 (en) * 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
US9842753B2 (en) * 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
US20150085466A1 (en) * 2013-09-24 2015-03-26 Intematix Corporation Low profile led-based lighting arrangements
KR102228941B1 (ko) * 2013-11-22 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 접근이 용이한 램프헤드
KR101458963B1 (ko) * 2014-02-18 2014-11-12 민정은 급속 열처리장치용 히터장치
US9728430B2 (en) * 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating

Also Published As

Publication number Publication date
WO2017003866A1 (en) 2017-01-05
JP2018523305A (ja) 2018-08-16
CN107710395A (zh) 2018-02-16
KR102553101B1 (ko) 2023-07-07
TW201701428A (zh) 2017-01-01
US20160379854A1 (en) 2016-12-29
KR20180014436A (ko) 2018-02-08

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