JP6886928B2 - 真空対応式led基板ヒータ - Google Patents
真空対応式led基板ヒータ Download PDFInfo
- Publication number
- JP6886928B2 JP6886928B2 JP2017567324A JP2017567324A JP6886928B2 JP 6886928 B2 JP6886928 B2 JP 6886928B2 JP 2017567324 A JP2017567324 A JP 2017567324A JP 2017567324 A JP2017567324 A JP 2017567324A JP 6886928 B2 JP6886928 B2 JP 6886928B2
- Authority
- JP
- Japan
- Prior art keywords
- leds
- recess
- led
- pattern
- led substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 93
- 239000002775 capsule Substances 0.000 claims description 23
- 239000008393 encapsulating agent Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- 241000255925 Diptera Species 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Led Device Packages (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Control Of Resistance Heating (AREA)
- Resistance Heating (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Description
Claims (5)
- 側壁により囲まれている凹部を有する基部と、
複数のLEDを有するとともに前記凹部内に配置されている電気回路であって、前記複数のLEDの内の全てが同じ波長で発光する電気回路と、
前記側壁の頂部上に配置され、前記凹部を被覆して、前記電気回路が配置された密封筐体を形成する窓であって、前記複数のLEDにより放出される波長に対し透過性である窓と、
前記密封筐体の残存容積を充填するカプセル封止体であって、LEDにより放出される前記波長に対し透過性となっているカプセル封止体と、
を具え、
前記電気回路が絶縁トレース及び導電性トレースを有し、前記絶縁トレースは前記凹部の上面にパターンで直接被着されており、前記導電性トレースは前記絶縁トレースの頂部上に被着されているとともに前記複数のLEDと電気的に接続しており、
前記凹部の前記上面の部分は、前記複数のLEDから基板の方へ光を反射するように、露出されるように絶縁トレース間に配置されるLED基板ヒータ。 - 請求項1に記載のLED基板ヒータにおいて、前記複数のLEDは同心円のパターンとして配置され、該パターンの中心から、より遠くに配置された同心円の各々は、前記パターンの中心に、より近くに配置された同心円の各々よりも多くのLEDを有するようになっているLED基板ヒータ。
- 請求項1に記載のLED基板ヒータにおいて、前記複数のLEDは同心円のパターンとして配置され、前記同心円は環状のバンドで組織化され、前記パターンは複数の環状のバンドを有し、特定のバンド内に配置された各同心円が同じ個数のLEDを有し、異なる環状のバンド内の同心円が異なる個数のLEDを有しているLED基板ヒータ。
- 請求項1に記載のLED基板ヒータにおいて、更に、前記窓上に、赤外線放射を基板の方向に反射させる光学塗膜を有しているLED基板ヒータ。
- 側壁により囲まれている凹部を有する基部と、
同心円のパターンとして配置された複数のLEDを有するとともに前記凹部の上面上に配置されている電気回路であって、前記複数のLEDの内の全てが同じ波長で発光する電気回路と、
前記側壁の頂部上に配置され、前記凹部を被覆し、カプセル封止体と接触して、前記電気回路が配置された密封筐体を形成する窓と、
前記密封筐体の残存容積を充填するカプセル封止体であって、LEDにより放出される前記波長に対し透過性となっているカプセル封止体と、を具えるLED基板ヒータであって、
前記窓及び前記カプセル封止体は前記複数のLEDにより放出される前記波長に対し透過性とし、
前記電気回路は金属基層を有するメタルコア印刷回路板を有し、前記複数のLEDは前記メタルコア印刷回路板の上面上に配置され、前記メタルコア印刷回路板の底面は前記凹部の前記上面と物理的に接触しており、
前記複数のLEDは同心円のパターンとして配置され、前記同心円は環状のバンドで組織化され、前記パターンは複数の環状のバンドを有し、特定のバンド内に配置された各同心円が同じ個数のLEDを有し、異なる環状のバンド内の同心円が異なる個数のLEDを有しているLED基板ヒータ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/753,991 | 2015-06-29 | ||
US14/753,991 US20160379854A1 (en) | 2015-06-29 | 2015-06-29 | Vacuum Compatible LED Substrate Heater |
PCT/US2016/039262 WO2017003866A1 (en) | 2015-06-29 | 2016-06-24 | Vacuum compatible led substrate heater |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018523305A JP2018523305A (ja) | 2018-08-16 |
JP2018523305A5 JP2018523305A5 (ja) | 2019-07-25 |
JP6886928B2 true JP6886928B2 (ja) | 2021-06-16 |
Family
ID=57602729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017567324A Active JP6886928B2 (ja) | 2015-06-29 | 2016-06-24 | 真空対応式led基板ヒータ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20160379854A1 (ja) |
JP (1) | JP6886928B2 (ja) |
KR (1) | KR102553101B1 (ja) |
CN (1) | CN107710395A (ja) |
TW (1) | TW201701428A (ja) |
WO (1) | WO2017003866A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP7274461B2 (ja) | 2017-09-12 | 2023-05-16 | アプライド マテリアルズ インコーポレイテッド | 保護バリア層を使用して半導体構造を製造する装置および方法 |
KR102396319B1 (ko) | 2017-11-11 | 2022-05-09 | 마이크로머티어리얼즈 엘엘씨 | 고압 프로세싱 챔버를 위한 가스 전달 시스템 |
WO2019099125A1 (en) | 2017-11-16 | 2019-05-23 | Applied Materials, Inc. | High pressure steam anneal processing apparatus |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
FR3076431A1 (fr) * | 2017-12-28 | 2019-07-05 | Aeroform France | Dispositif de chauffage sans contact |
KR102536820B1 (ko) | 2018-03-09 | 2023-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
KR102078157B1 (ko) * | 2018-04-16 | 2020-02-17 | 세메스 주식회사 | 기판 가열 유닛 및 이를 갖는 기판 처리 장치 |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
KR101961864B1 (ko) | 2018-08-17 | 2019-03-26 | 남윤종 | 폐엘이디 칩 분리 장치 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
JP7077989B2 (ja) | 2019-02-20 | 2022-05-31 | 株式会社デンソー | 車両用空調ユニット |
JP7198434B2 (ja) * | 2019-03-27 | 2023-01-04 | ウシオ電機株式会社 | 加熱処理方法及び光加熱装置 |
WO2020263766A1 (en) * | 2019-06-24 | 2020-12-30 | Lam Research Corporation | Vapor cleaning of substrate surfaces |
JP7398935B2 (ja) * | 2019-11-25 | 2023-12-15 | 東京エレクトロン株式会社 | 載置台、及び、検査装置 |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
US6818864B2 (en) * | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
JP3776092B2 (ja) * | 2003-03-25 | 2006-05-17 | 株式会社ルネサステクノロジ | エッチング装置、エッチング方法および半導体装置の製造方法 |
US20070013057A1 (en) * | 2003-05-05 | 2007-01-18 | Joseph Mazzochette | Multicolor LED assembly with improved color mixing |
JP4442171B2 (ja) * | 2003-09-24 | 2010-03-31 | 東京エレクトロン株式会社 | 熱処理装置 |
WO2006112478A1 (ja) * | 2005-04-19 | 2006-10-26 | Denki Kagaku Kogyo Kabushiki Kaisha | 金属ベース回路基板、led、及びled光源ユニット |
JP5055756B2 (ja) * | 2005-09-21 | 2012-10-24 | 東京エレクトロン株式会社 | 熱処理装置及び記憶媒体 |
CN101846247B (zh) * | 2005-12-22 | 2013-04-17 | 松下电器产业株式会社 | 具有led的照明器具 |
KR100855065B1 (ko) * | 2007-04-24 | 2008-08-29 | 삼성전기주식회사 | 발광 다이오드 패키지 |
US7847309B2 (en) * | 2007-07-16 | 2010-12-07 | GE Lighting Solutions, LLC | Red line emitting complex fluoride phosphors activated with Mn4+ |
JP5084420B2 (ja) * | 2007-09-21 | 2012-11-28 | 東京エレクトロン株式会社 | ロードロック装置および真空処理システム |
JP2009099925A (ja) * | 2007-09-27 | 2009-05-07 | Tokyo Electron Ltd | アニール装置 |
JP2010129861A (ja) * | 2008-11-28 | 2010-06-10 | Tokyo Electron Ltd | 熱処理装置 |
KR20110039080A (ko) * | 2009-10-09 | 2011-04-15 | 알티반도체 주식회사 | 백라이트 유닛 및 그 제조 방법 |
US20110217848A1 (en) * | 2010-03-03 | 2011-09-08 | Bergman Eric J | Photoresist removing processor and methods |
JP5526876B2 (ja) * | 2010-03-09 | 2014-06-18 | 東京エレクトロン株式会社 | 加熱装置及びアニール装置 |
CN102214766A (zh) * | 2010-04-02 | 2011-10-12 | 游森溢 | 发光二极管封装结构 |
JP2012023330A (ja) | 2010-06-14 | 2012-02-02 | Tokyo Electron Ltd | 加熱源装置及びアニール装置 |
US10211380B2 (en) * | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
US9842753B2 (en) * | 2013-04-26 | 2017-12-12 | Applied Materials, Inc. | Absorbing lamphead face |
US20150085466A1 (en) * | 2013-09-24 | 2015-03-26 | Intematix Corporation | Low profile led-based lighting arrangements |
WO2015076943A1 (en) * | 2013-11-22 | 2015-05-28 | Applied Materials, Inc. | Easy access lamphead |
KR101458963B1 (ko) * | 2014-02-18 | 2014-11-12 | 민정은 | 급속 열처리장치용 히터장치 |
US9728430B2 (en) * | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
-
2015
- 2015-06-29 US US14/753,991 patent/US20160379854A1/en not_active Abandoned
-
2016
- 2016-06-02 TW TW105117295A patent/TW201701428A/zh unknown
- 2016-06-24 JP JP2017567324A patent/JP6886928B2/ja active Active
- 2016-06-24 KR KR1020187002306A patent/KR102553101B1/ko active IP Right Grant
- 2016-06-24 CN CN201680038070.3A patent/CN107710395A/zh active Pending
- 2016-06-24 WO PCT/US2016/039262 patent/WO2017003866A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20160379854A1 (en) | 2016-12-29 |
KR102553101B1 (ko) | 2023-07-07 |
KR20180014436A (ko) | 2018-02-08 |
WO2017003866A1 (en) | 2017-01-05 |
JP2018523305A (ja) | 2018-08-16 |
TW201701428A (zh) | 2017-01-01 |
CN107710395A (zh) | 2018-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6886928B2 (ja) | 真空対応式led基板ヒータ | |
CN107810547B (zh) | 设备及利用发光二极管加热的静电夹具 | |
KR100977886B1 (ko) | 열처리 장치 및 기억 매체 | |
JP7157137B2 (ja) | 照射のための装置および方法 | |
KR101569327B1 (ko) | 개선된 냉각 디바이스를 갖는 챔버 | |
US20110089804A1 (en) | Thermal management of led-based illumination devices with synthetic jet ejectors | |
TWI382507B (zh) | Semiconductor package | |
JP5394730B2 (ja) | アニール装置およびアニール方法 | |
US20120002401A1 (en) | Liquid cooled led light bulb | |
WO2014176465A1 (en) | Cooling mechanism for led light using 3-d phase change heat transfer | |
TW201442306A (zh) | 用於固態光源陣列的熱管理裝置 | |
TW201300691A (zh) | 固態燈具之蒸氣室冷卻技術 | |
US20230182107A1 (en) | Improved cooling of tube containing reactants | |
KR102121406B1 (ko) | 웨이퍼 가열장치 | |
CN213093194U (zh) | 一种陶瓷蒸汽腔散热器 | |
KR20160100712A (ko) | 직접 냉각식 발광다이오드 조명기기 | |
JP6716302B2 (ja) | 流体加熱装置 | |
CN111900141A (zh) | 一种陶瓷蒸汽腔散热器 | |
KR101564085B1 (ko) | 발열 기구용 방열장치 | |
TWI572739B (zh) | 加熱裝置 | |
TW201341716A (zh) | 照明裝置及其散熱裝置 | |
Schneider et al. | Very high power density LED modules on aluminum substrates with embedded water cooling |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190618 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190618 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200716 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200825 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201105 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210413 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210427 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210517 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6886928 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |