JP6841321B2 - SiCエピタキシャルウエハの製造方法 - Google Patents
SiCエピタキシャルウエハの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 15
- 230000007547 defect Effects 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 25
- 239000002994 raw material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 121
- 229910010271 silicon carbide Inorganic materials 0.000 description 121
- 238000006243 chemical reaction Methods 0.000 description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000005424 photoluminescence Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Description
図1は、本発明の実施の形態1に係るSiCエピタキシャルウエハを示す断面図及び上面図である。SiC基板1は、結晶多形が4H型であり、導電型がn型であり、[0001]結晶軸からオフ角θ=4°の傾きを有する。SiC基板1の上に、n型のSiCエピタキシャル層2が形成されている。SiCエピタキシャル層2の膜厚はTm(μm)である。
図9は、本発明の実施の形態2に係るSiCデバイスを示す断面図である。このSiCデバイスは、実施の形態1に係るSiCエピタキシャルウエハを用いたMOSFETである。従って、デバイスのチップ歩留を改善することができる。
図10は、本発明の実施の形態3に係るSiCデバイスを示す断面図である。このSiCデバイスは、実施の形態1に係るSiCエピタキシャルウエハを用いたショットキダイオードである。従って、デバイスのチップ歩留を改善することができる。
本実施の形態は、上述した実施の形態2又は3に係るSiCデバイスを電力変換装置に適用したものである。電力変換装置は、例えば、インバータ装置、コンバータ装置、サーボアンプ、電源ユニットなどである。本発明は特定の電力変換装置に限定されるものではないが、以下、三相のインバータに本発明を適用した場合について説明する。
Claims (7)
- オフ角θ(°)を有するSiC基板と、前記SiC基板の上に形成された膜厚Tm(μm)のSiCエピタキシャル層とを備え、前記SiCエピタキシャル層の表面には三角欠陥が形成され、前記三角欠陥のうち、基板オフ方向への長さがTm/Tanθ×0.9以上のものの密度をA、基板オフ方向への長さがTm/Tanθ×0.9より短いものの密度をBとしてB/A≦0.5を満たすSiCエピタキシャルウエハの製造方法であって、
前記SiC基板をウエハホルダに載せてサセプタの内部に収容する工程と、
原料ガスを供給して前記SiC基板の上に前記SiCエピタキシャル層を成長させる工程とを備え、
前記SiC基板の直上における前記サセプタの温度を前記SiC基板の直上以外の部分における温度よりも高くすることを特徴とするSiCエピタキシャルウエハの製造方法。 - オフ角θ(°)を有するSiC基板と、前記SiC基板の上に形成された膜厚Tm(μm)のSiCエピタキシャル層とを備え、前記SiCエピタキシャル層の表面には三角欠陥が形成され、前記三角欠陥のうち、基板オフ方向への長さがTm/Tanθ×0.9以上のものの密度をA、基板オフ方向への長さがTm/Tanθ×0.9より短いものの密度をBとしてB/A≦0.5を満たすSiCエピタキシャルウエハの製造方法であって、
前記SiC基板をウエハホルダに載せてサセプタの内部に収容する工程と、
原料ガスを供給して前記SiC基板の上に前記SiCエピタキシャル層を成長させる工程とを備え、
前記サセプタの天井と前記SiC基板との間のガス流を複数層に分離し、前記サセプタの天井側に流すガスをキャリアガスとし、流速を前記SiC基板側に流すガスに対して速くすることを特徴とするSiCエピタキシャルウエハの製造方法。 - オフ角θ(°)を有するSiC基板と、前記SiC基板の上に形成された膜厚Tm(μm)のSiCエピタキシャル層とを備え、前記SiCエピタキシャル層の表面には三角欠陥が形成され、前記三角欠陥のうち、基板オフ方向への長さがTm/Tanθ×0.9以上のものの密度をA、基板オフ方向への長さがTm/Tanθ×0.9より短いものの密度をBとしてB/A≦0.5を満たすSiCエピタキシャルウエハの製造方法であって、
前記SiC基板をウエハホルダに載せてサセプタの内部に収容する工程と、
原料ガスを供給して前記SiC基板の上に前記SiCエピタキシャル層を成長させる工程とを備え、
前記サセプタ又は前記ウエハホルダとして母材の表面にSiCコートを堆積したものを用い、
前記SiCコートのC/Si比は膜厚が増えるほど高くなり、
前記SiCコートの最表面のC/Si比は前記SiCエピタキシャル層と同じであることを特徴とするSiCエピタキシャルウエハの製造方法。 - 前記三角欠陥の密度Bが0.5個/cm 2 以下であることを特徴とする請求項1〜3の何れか1項に記載のSiCエピタキシャルウエハの製造方法。
- 前記SiCエピタキシャル層の膜厚Tmが30μm以上であることを特徴とする請求項1〜4の何れか1項に記載のSiCエピタキシャルウエハの製造方法。
- Tm/Tanθ×0.5より短い三角欠陥の密度をCとしてC/A≦0.2を満たすことを特徴とする請求項1〜5の何れか1項に記載のSiCエピタキシャルウエハの製造方法。
- 前記SiCエピタキシャル層が2層以上であることを特徴とする請求項1〜6の何れか1項に記載のSiCエピタキシャルウエハの製造方法。
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