JP6834400B2 - 撮像素子、積層型撮像素子、撮像装置及び電子装置 - Google Patents

撮像素子、積層型撮像素子、撮像装置及び電子装置 Download PDF

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JP6834400B2
JP6834400B2 JP2016227291A JP2016227291A JP6834400B2 JP 6834400 B2 JP6834400 B2 JP 6834400B2 JP 2016227291 A JP2016227291 A JP 2016227291A JP 2016227291 A JP2016227291 A JP 2016227291A JP 6834400 B2 JP6834400 B2 JP 6834400B2
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derivative
image pickup
electrode
group
photoelectric conversion
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JP2018085427A5 (https=
JP2018085427A (ja
Inventor
康晴 氏家
康晴 氏家
雅和 室山
雅和 室山
雅史 坂東
雅史 坂東
昌樹 村田
昌樹 村田
英之 汲田
英之 汲田
佐知子 境川
佐知子 境川
晋太郎 平田
晋太郎 平田
裕也 熊谷
裕也 熊谷
加藤　裕
裕 加藤
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Sony Corp
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Sony Corp
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Priority to JP2016227291A priority Critical patent/JP6834400B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201780070351.1A priority patent/CN109952652B/zh
Priority to CN202311062325.8A priority patent/CN117202754A/zh
Priority to KR1020197013457A priority patent/KR102645210B1/ko
Priority to KR1020247007201A priority patent/KR20240033185A/ko
Priority to CN202311059948.XA priority patent/CN117202752A/zh
Priority to CN202311061806.7A priority patent/CN117202753A/zh
Priority to PCT/JP2017/041394 priority patent/WO2018097046A1/en
Priority to US16/349,759 priority patent/US10886335B2/en
Publication of JP2018085427A publication Critical patent/JP2018085427A/ja
Publication of JP2018085427A5 publication Critical patent/JP2018085427A5/ja
Priority to US17/096,515 priority patent/US20210134887A1/en
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Publication of JP6834400B2 publication Critical patent/JP6834400B2/ja
Priority to US18/347,186 priority patent/US20230354627A1/en
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    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
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    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
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    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2016227291A 2016-11-22 2016-11-22 撮像素子、積層型撮像素子、撮像装置及び電子装置 Active JP6834400B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2016227291A JP6834400B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子、撮像装置及び電子装置
US16/349,759 US10886335B2 (en) 2016-11-22 2017-11-17 Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus
KR1020197013457A KR102645210B1 (ko) 2016-11-22 2017-11-17 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치
KR1020247007201A KR20240033185A (ko) 2016-11-22 2017-11-17 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치
CN202311059948.XA CN117202752A (zh) 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置
CN202311061806.7A CN117202753A (zh) 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置
CN201780070351.1A CN109952652B (zh) 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置
CN202311062325.8A CN117202754A (zh) 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置
PCT/JP2017/041394 WO2018097046A1 (en) 2016-11-22 2017-11-17 Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus
US17/096,515 US20210134887A1 (en) 2016-11-22 2020-11-12 Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus
US18/347,186 US20230354627A1 (en) 2016-11-22 2023-07-05 Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

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JP2018085427A5 JP2018085427A5 (https=) 2018-07-12
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WO2016027675A1 (ja) * 2014-08-20 2016-02-25 東レ株式会社 光電変換素子ならびにそれを用いたイメージセンサ、太陽電池、単色検知センサおよびフレキシブルセンサ

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