KR102645210B1 - 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 - Google Patents

촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 Download PDF

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KR102645210B1
KR102645210B1 KR1020197013457A KR20197013457A KR102645210B1 KR 102645210 B1 KR102645210 B1 KR 102645210B1 KR 1020197013457 A KR1020197013457 A KR 1020197013457A KR 20197013457 A KR20197013457 A KR 20197013457A KR 102645210 B1 KR102645210 B1 KR 102645210B1
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imaging device
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electrode
photoelectric conversion
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KR20190085922A (ko
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야스하루 우지이에
마사카즈 무로야마
마사시 반도
마사키 무라타
히데유키 쿠미타
사치코 사카이가와
신타로우 히라타
유야 쿠마가이
유 카토
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소니그룹주식회사
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    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/80—Constructional details of image sensors
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KR1020197013457A 2016-11-22 2017-11-17 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치 Active KR102645210B1 (ko)

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KR1020247007201A KR20240033185A (ko) 2016-11-22 2017-11-17 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치

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JPJP-P-2016-227291 2016-11-22
JP2016227291A JP6834400B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子、撮像装置及び電子装置
PCT/JP2017/041394 WO2018097046A1 (en) 2016-11-22 2017-11-17 Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

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KR102645210B1 true KR102645210B1 (ko) 2024-03-08

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KR1020247007201A Ceased KR20240033185A (ko) 2016-11-22 2017-11-17 촬상 소자, 적층형 촬상 소자, 촬상 장치 및 전자 장치

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US (3) US10886335B2 (https=)
JP (1) JP6834400B2 (https=)
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WO (1) WO2018097046A1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7007088B2 (ja) * 2016-12-07 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
US20210114988A1 (en) * 2018-07-09 2021-04-22 Sony Corporation Photoelectric conversion element
EP3955319B1 (en) * 2019-04-10 2023-06-14 Panasonic Intellectual Property Management Co., Ltd. Imaging device
WO2020218264A1 (ja) 2019-04-22 2020-10-29 保土谷化学工業株式会社 インデノカルバゾール環を有する化合物からなる有機薄膜を備える光電変換素子
JP7663316B2 (ja) * 2019-09-09 2025-04-16 キヤノン株式会社 半導体装置
KR102876927B1 (ko) * 2019-11-06 2025-10-24 삼성전자주식회사 광전 변환 소자, 센서 및 전자 장치
KR20210092367A (ko) 2020-01-15 2021-07-26 삼성디스플레이 주식회사 유기 전계 발광 소자 및 유기 전계 발광 소자용 아민 화합물
CN114846611B (zh) * 2020-01-29 2025-06-17 索尼集团公司 成像元件和成像装置
JP7516094B2 (ja) * 2020-04-07 2024-07-16 キヤノン株式会社 光電変換素子
CN111933805B (zh) * 2020-09-04 2025-01-21 天津理工大学 一种亚酞菁衍生物的异质结型绿光探测器的制备方法
JP7711082B2 (ja) 2020-10-01 2025-07-22 保土谷化学工業株式会社 光電変換素子に用いる有機薄膜、及びその光電変換素子
US20230389418A1 (en) * 2020-11-27 2023-11-30 Nippon Steel Chemical & Material Co., Ltd. Material of photoelectric conversion element for imaging, and photoelectric conversion element
TWI899379B (zh) 2020-11-27 2025-10-01 日商日鐵化學材料股份有限公司 攝像用光電轉換元件
JP7791700B2 (ja) 2020-12-23 2025-12-24 保土谷化学工業株式会社 インドロカルバゾール環を有する化合物、受光素子用材料、有機薄膜、受光素子、及び撮像素子
JP2022108268A (ja) 2021-01-12 2022-07-25 保土谷化学工業株式会社 光電変換素子に用いる有機薄膜、及びその光電変換素子
JP7785551B2 (ja) 2021-01-28 2025-12-15 保土谷化学工業株式会社 光電変換素子および撮像素子
KR20220115517A (ko) 2021-02-10 2022-08-17 호도가야 가가쿠 고교 가부시키가이샤 디카르바졸을 갖는 광전 변환 소자용 재료, 유기 박막, 광전 변환 소자 및 촬상 소자
KR20240035755A (ko) 2021-07-15 2024-03-18 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 촬상용의 광전 변환 소자용 재료 및 촬상용 광전 변환 소자
JPWO2023286817A1 (https=) 2021-07-15 2023-01-19
JP2023050149A (ja) 2021-09-29 2023-04-10 保土谷化学工業株式会社 光電変換素子に用いる有機薄膜
JPWO2023074230A1 (https=) * 2021-10-26 2023-05-04
TW202404063A (zh) 2022-05-25 2024-01-16 日商日鐵化學材料股份有限公司 攝像用的光電轉換元件用材料及光電轉換元件
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WO2024057957A1 (ja) 2022-09-14 2024-03-21 日鉄ケミカル＆マテリアル株式会社 光電変換素子用材料及びこれを用いた光電変換素子
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JP2024127793A (ja) 2023-03-08 2024-09-20 保土谷化学工業株式会社 受光素子用有機薄膜、およびそれを用いた受光素子
CN121220211A (zh) * 2023-07-14 2025-12-26 日铁化学材料株式会社 光电转换元件用材料及使用其的光电转换元件
JP2025040963A (ja) 2023-09-12 2025-03-25 保土谷化学工業株式会社 縮合多環構造を有する化合物、受光素子用有機薄膜、および受光素子
CN117596908B (zh) * 2024-01-19 2024-04-05 武汉楚兴技术有限公司 一种像素单元、图像传感器及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016027675A1 (ja) * 2014-08-20 2016-02-25 東レ株式会社 光電変換素子ならびにそれを用いたイメージセンサ、太陽電池、単色検知センサおよびフレキシブルセンサ
JP2016033978A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 光電変換装置、及び撮像システム

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843607A (en) * 1997-10-02 1998-12-01 Xerox Corporation Indolocarbazole photoconductors
JP4896318B2 (ja) * 2001-09-10 2012-03-14 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2004055461A (ja) * 2002-07-23 2004-02-19 Seiko Epson Corp 発光装置及びその製造方法、並びに電子機器
JP4677314B2 (ja) 2005-09-20 2011-04-27 富士フイルム株式会社 センサーおよび有機光電変換素子の駆動方法
JP5655568B2 (ja) * 2008-10-09 2015-01-21 コニカミノルタ株式会社 有機光電変換素子、太陽電池及び光センサアレイ
EP2334008A1 (en) 2009-12-10 2011-06-15 Tata Consultancy Services Limited A system and method for designing secure client-server communication protocols based on certificateless public key infrastructure
JP4852663B2 (ja) 2010-02-09 2012-01-11 富士フイルム株式会社 光電変換素子及び撮像素子並びにそれらの駆動方法
WO2011125020A1 (en) * 2010-04-06 2011-10-13 Basf Se Substituted carbazole derivatives and use thereof in organic electronics
KR101975611B1 (ko) * 2011-02-22 2019-05-07 호도가야 가가쿠 고교 가부시키가이샤 인돌로카르바졸 고리 구조를 갖는 화합물 및 유기 일렉트로루미네선스 소자
EP2726865B1 (en) 2011-07-01 2016-12-14 Cambridge Enterprise Ltd. Methods for predicting mammalian embryo viability
JP5987830B2 (ja) * 2011-08-30 2016-09-07 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子
TWI535726B (zh) * 2012-09-10 2016-06-01 迪愛生股份有限公司 苯并噻吩苯并噻吩衍生物、有機半導體材料及有機電晶體
CN104641484B (zh) * 2012-09-21 2017-09-08 株式会社半导体能源研究所 发光元件、发光装置、电子设备及照明装置
JP2014127545A (ja) 2012-12-26 2014-07-07 Sony Corp 固体撮像素子およびこれを備えた固体撮像装置
JP2015020953A (ja) * 2013-07-17 2015-02-02 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． ビピリジン部位を有するインドロカルバゾール誘導体及びそれを用いた有機電界発光素子
JP6010567B2 (ja) * 2013-08-02 2016-10-19 富士フイルム株式会社 光電変換材料、光電変換素子、光センサおよび撮像素子
CN105960714B (zh) * 2014-02-05 2018-02-09 东丽株式会社 光电转换元件及图像传感器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016033978A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 光電変換装置、及び撮像システム
WO2016027675A1 (ja) * 2014-08-20 2016-02-25 東レ株式会社 光電変換素子ならびにそれを用いたイメージセンサ、太陽電池、単色検知センサおよびフレキシブルセンサ

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KR20190085922A (ko) 2019-07-19
WO2018097046A1 (en) 2018-05-31
US20230354627A1 (en) 2023-11-02
US10886335B2 (en) 2021-01-05
US20210134887A1 (en) 2021-05-06
US20190288040A1 (en) 2019-09-19
KR20240033185A (ko) 2024-03-12
CN117202753A (zh) 2023-12-08
CN117202754A (zh) 2023-12-08
CN109952652B (zh) 2023-09-19
JP6834400B2 (ja) 2021-02-24
CN109952652A (zh) 2019-06-28
JP2018085427A (ja) 2018-05-31
CN117202752A (zh) 2023-12-08

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