CN117202753A - 成像元件、堆叠式成像元件、成像装置和电子装置 - Google Patents

成像元件、堆叠式成像元件、成像装置和电子装置 Download PDF

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Publication number
CN117202753A
CN117202753A CN202311061806.7A CN202311061806A CN117202753A CN 117202753 A CN117202753 A CN 117202753A CN 202311061806 A CN202311061806 A CN 202311061806A CN 117202753 A CN117202753 A CN 117202753A
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derivatives
derivative
photoelectric conversion
electrode
group
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Chinese (zh)
Inventor
氏家康晴
室山雅和
坂东雅史
村田昌树
汲田英之
境川佐知子
平田晋太郎
熊谷裕也
加藤裕
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Sony Corp
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Sony Corp
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
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    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/649—Aromatic compounds comprising a hetero atom
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
CN202311061806.7A 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置 Withdrawn CN117202753A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-227291 2016-11-22
JP2016227291A JP6834400B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子、撮像装置及び電子装置
CN201780070351.1A CN109952652B (zh) 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置
PCT/JP2017/041394 WO2018097046A1 (en) 2016-11-22 2017-11-17 Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

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CN201780070351.1A Active CN109952652B (zh) 2016-11-22 2017-11-17 成像元件、堆叠式成像元件、成像装置和电子装置
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JP (1) JP6834400B2 (https=)
KR (2) KR102645210B1 (https=)
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JPWO2023286817A1 (https=) 2021-07-15 2023-01-19
JP2023050149A (ja) 2021-09-29 2023-04-10 保土谷化学工業株式会社 光電変換素子に用いる有機薄膜
JPWO2023074230A1 (https=) * 2021-10-26 2023-05-04
TW202404063A (zh) 2022-05-25 2024-01-16 日商日鐵化學材料股份有限公司 攝像用的光電轉換元件用材料及光電轉換元件
TW202402758A (zh) 2022-05-25 2024-01-16 日商日鐵化學材料股份有限公司 攝像用的光電轉換元件用材料及使用其的攝像用光電轉換元件
WO2024057957A1 (ja) 2022-09-14 2024-03-21 日鉄ケミカル＆マテリアル株式会社 光電変換素子用材料及びこれを用いた光電変換素子
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WO2024135588A1 (ja) 2022-12-23 2024-06-27 日鉄ケミカル＆マテリアル株式会社 光電変換素子用材料を含む光電変換素子
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KR20190085922A (ko) 2019-07-19
WO2018097046A1 (en) 2018-05-31
KR102645210B1 (ko) 2024-03-08
US20230354627A1 (en) 2023-11-02
US10886335B2 (en) 2021-01-05
US20210134887A1 (en) 2021-05-06
US20190288040A1 (en) 2019-09-19
KR20240033185A (ko) 2024-03-12
CN117202754A (zh) 2023-12-08
CN109952652B (zh) 2023-09-19
JP6834400B2 (ja) 2021-02-24
CN109952652A (zh) 2019-06-28
JP2018085427A (ja) 2018-05-31
CN117202752A (zh) 2023-12-08

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